My Quote Request
5962-01-173-7473
20 Products
717315-150
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011737473
NSN
5962-01-173-7473
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 BUFFER
FEATURES PROVIDED: W/RESISTOR AND W/EXPANDER AND POSITIVE OUTPUTS AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 3-2-3-2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-717315-150 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 15.0 VOLTS MAXIMUM POWER SOURCE
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TS-3856
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011737449
NSN
5962-01-173-7449
MFG
MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, DIFFERENTIAL
FEATURES PROVIDED: HIGH GAIN AND WIDEBAND AND FREQUENCY COMPENSATED AND W/RESISTOR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 570.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 FLAT LEADS
TEST DATA DOCUMENT: 05869-710205-67 DRAWING
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
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UA702FM
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011737449
NSN
5962-01-173-7449
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, DIFFERENTIAL
FEATURES PROVIDED: HIGH GAIN AND WIDEBAND AND FREQUENCY COMPENSATED AND W/RESISTOR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 570.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 FLAT LEADS
TEST DATA DOCUMENT: 05869-710205-67 DRAWING
TIME RATING PER CHACTERISTIC: 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
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362BL059
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011737450
NSN
5962-01-173-7450
MFG
TELCOM SEMICONDUCTOR INC
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, INTERFACE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-717315-153 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 335.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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362BL902
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011737450
NSN
5962-01-173-7450
MFG
TELCOM SEMICONDUCTOR INC
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, INTERFACE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-717315-153 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 335.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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717315-153
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011737450
NSN
5962-01-173-7450
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, INTERFACE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-717315-153 DRAWING
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 335.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962011737454
NSN
5962-01-173-7454
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.700 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.230 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, MULTIPLEX
FEATURES PROVIDED: W/DECODED OUTPUT AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 8 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 470.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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166175
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011737455
NSN
5962-01-173-7455
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, CURRENT
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED
III END ITEM IDENTIFICATION: COMPUTER DISPLAY SET AN/UYQ-23(V)6
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
TEST DATA DOCUMENT: 21877-166175 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011737455
NSN
5962-01-173-7455
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, CURRENT
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED
III END ITEM IDENTIFICATION: COMPUTER DISPLAY SET AN/UYQ-23(V)6
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
TEST DATA DOCUMENT: 21877-166175 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011737457
NSN
5962-01-173-7457
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND BURN IN AND HERMETICALLY SEALED
III END ITEM IDENTIFICATION: AN/UYQ-23(V)6
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011737457
NSN
5962-01-173-7457
MFG
MITEL SEMICONDUCTOR AMERICANS INC
Description
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND BURN IN AND HERMETICALLY SEALED
III END ITEM IDENTIFICATION: AN/UYQ-23(V)6
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011737457
NSN
5962-01-173-7457
MFG
MITEL SEMICONDUCTOR AMERICANS INC
Description
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND BURN IN AND HERMETICALLY SEALED
III END ITEM IDENTIFICATION: AN/UYQ-23(V)6
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011737457
NSN
5962-01-173-7457
MFG
MITEL SEMICONDUCTOR AMERICANS INC
Description
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND BURN IN AND HERMETICALLY SEALED
III END ITEM IDENTIFICATION: AN/UYQ-23(V)6
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE
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1572200-9
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011737458
NSN
5962-01-173-7458
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 512
(NON-CORE DATA) WORD QUANTITY: 64
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011737458
NSN
5962-01-173-7458
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 512
(NON-CORE DATA) WORD QUANTITY: 64
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011737458
NSN
5962-01-173-7458
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 512
(NON-CORE DATA) WORD QUANTITY: 64
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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5962011737458
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5962-01-173-7458
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NSN, MFG P/N
5962011737458
NSN
5962-01-173-7458
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 512
(NON-CORE DATA) WORD QUANTITY: 64
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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717315-158
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011737471
NSN
5962-01-173-7471
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LAMP
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
OPERATING TEMP RANGE: -30.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-717315-158 DRAWING
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962011737471
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5962-01-173-7471
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LAMP
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
OPERATING TEMP RANGE: -30.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-717315-158 DRAWING
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
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303BL059
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011737473
NSN
5962-01-173-7473
MFG
TELCOM SEMICONDUCTOR INC
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 BUFFER
FEATURES PROVIDED: W/RESISTOR AND W/EXPANDER AND POSITIVE OUTPUTS AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 3-2-3-2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-717315-150 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 15.0 VOLTS MAXIMUM POWER SOURCE