My Quote Request
5962-01-180-3450
20 Products
ROM/PROM FAMILY 029
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803450
NSN
5962-01-180-3450
ROM/PROM FAMILY 029
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803450
NSN
5962-01-180-3450
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
JM38510/21002BJB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803450
NSN
5962-01-180-3450
JM38510/21002BJB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803450
NSN
5962-01-180-3450
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
M38510/21002BJB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803450
NSN
5962-01-180-3450
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
305241-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011803451
NSN
5962-01-180-3451
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.150 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND HIGH SPEED AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 614.4 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
537864-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011803451
NSN
5962-01-180-3451
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.150 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND HIGH SPEED AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 614.4 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HM1-7621-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011803451
NSN
5962-01-180-3451
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.150 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND HIGH SPEED AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 614.4 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011803451
NSN
5962-01-180-3451
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011803451
NSN
5962-01-180-3451
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.150 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND HIGH SPEED AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 614.4 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
10123F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803453
NSN
5962-01-180-3453
MFG
PHILIPS SEMICONDUCTORS INC
Description
MICROCIRCUIT,DIGITAL
Related Searches:
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803453
NSN
5962-01-180-3453
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MICROCIRCUIT,DIGITAL
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3597038-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803453
NSN
5962-01-180-3453
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV
Description
MICROCIRCUIT,DIGITAL
Related Searches:
F10523DMQB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803453
NSN
5962-01-180-3453
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
MICROCIRCUIT,DIGITAL
Related Searches:
924724-0001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011803454
NSN
5962-01-180-3454
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.950 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH PERFORMANCE AND STATIC OPERATION AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
D2142-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011803454
NSN
5962-01-180-3454
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.950 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH PERFORMANCE AND STATIC OPERATION AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
D2142-3
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011803454
NSN
5962-01-180-3454
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.950 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH PERFORMANCE AND STATIC OPERATION AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011803454
NSN
5962-01-180-3454
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.950 INCHES MINIMUM AND 0.990 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH PERFORMANCE AND STATIC OPERATION AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 18 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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3596454-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803455
NSN
5962-01-180-3455
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND W/ENABLE AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803455
NSN
5962-01-180-3455
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND W/ENABLE AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803457
NSN
5962-01-180-3457
MFG
AERO SYSTEMS ENGINEERING INC.
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.187 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TIMER, INTERVAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND W/CLOCK
III END ITEM IDENTIFICATION: DATA ANALYSIS AN/GSQ-46
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803457
NSN
5962-01-180-3457
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.187 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TIMER, INTERVAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND W/CLOCK
III END ITEM IDENTIFICATION: DATA ANALYSIS AN/GSQ-46
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011803457
NSN
5962-01-180-3457
MFG
INTEL CORP SALES OFFICE
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.187 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TIMER, INTERVAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND W/CLOCK
III END ITEM IDENTIFICATION: DATA ANALYSIS AN/GSQ-46
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE