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5962-01-189-1043

20 Products

ROM/PROM FAMILY 028

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891043

NSN

5962-01-189-1043

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ROM/PROM FAMILY 028

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891043

NSN

5962-01-189-1043

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: INTEGRATED AUTOMATIC DETECTION AND TRACKING SYSTEM AN/SYS-1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

1000863-01

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011890649

NSN

5962-01-189-0649

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1000863-01

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011890649

NSN

5962-01-189-0649

MFG

RAYTHEON TECHNICAL SERVICES COMPANY

1007573-001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011890649

NSN

5962-01-189-0649

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1007573-001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011890649

NSN

5962-01-189-0649

MFG

L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION

420-0142-000

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011890649

NSN

5962-01-189-0649

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420-0142-000

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011890649

NSN

5962-01-189-0649

MFG

RTP CORP.

TP4011AN

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011890649

NSN

5962-01-189-0649

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TP4011AN

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011890649

NSN

5962-01-189-0649

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

13219272

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011890650

NSN

5962-01-189-0650

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13219272

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011890650

NSN

5962-01-189-0650

MFG

U S ARMY AVIATION AND MISSILE COMMAND

295817-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011891026

NSN

5962-01-189-1026

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295817-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011891026

NSN

5962-01-189-1026

MFG

EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT

Description

BODY HEIGHT: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-8 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE
FEATURES PROVIDED: CASCADABLE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -54.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 21.0 VOLTS MAXIMUM POWER SOURCE

A35-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011891026

NSN

5962-01-189-1026

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A35-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011891026

NSN

5962-01-189-1026

MFG

WATKINS-JOHNSON CO

Description

BODY HEIGHT: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-8 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE
FEATURES PROVIDED: CASCADABLE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -54.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 21.0 VOLTS MAXIMUM POWER SOURCE

R-295817-002

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011891026

NSN

5962-01-189-1026

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R-295817-002

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011891026

NSN

5962-01-189-1026

MFG

TEGAM INC.

Description

BODY HEIGHT: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-8 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE
FEATURES PROVIDED: CASCADABLE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -54.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 21.0 VOLTS MAXIMUM POWER SOURCE

2676631-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891031

NSN

5962-01-189-1031

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2676631-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891031

NSN

5962-01-189-1031

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.990 INCHES MINIMUM AND 0.995 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: ARRAY,LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-2676631 DRAWING
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

807046-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891031

NSN

5962-01-189-1031

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807046-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891031

NSN

5962-01-189-1031

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.990 INCHES MINIMUM AND 0.995 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: ARRAY,LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-2676631 DRAWING
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

PAL16R8MJ/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891031

NSN

5962-01-189-1031

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PAL16R8MJ/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891031

NSN

5962-01-189-1031

MFG

MMI/AMD

Description

BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.990 INCHES MINIMUM AND 0.995 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: ARRAY,LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-2676631 DRAWING
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 048

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891031

NSN

5962-01-189-1031

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ROM/PROM FAMILY 048

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891031

NSN

5962-01-189-1031

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.990 INCHES MINIMUM AND 0.995 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMED AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: ARRAY,LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-2676631 DRAWING
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE

CD40193BE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011891033

NSN

5962-01-189-1033

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CD40193BE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011891033

NSN

5962-01-189-1033

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, UP/DOWN
FEATURES PROVIDED: W/PRESET AND W/ENABLE AND W/CLOCK AND W/RESET
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 600.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 600.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

N8T31N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011891034

NSN

5962-01-189-1034

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N8T31N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011891034

NSN

5962-01-189-1034

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 8
(NON-CORE DATA) WORD QUANTITY: 1
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
BODY LENGTH: 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM
BODY WIDTH: 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 PORT, INPUT/OUTPUT
FEATURES PROVIDED: SYNCHRONOUS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT

166270

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891042

NSN

5962-01-189-1042

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166270

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891042

NSN

5962-01-189-1042

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: INTEGRATED AUTOMATIC DETECTION AND TRACKING SYSTEM AN/SYS-1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

M38510/20904BJB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891042

NSN

5962-01-189-1042

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M38510/20904BJB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891042

NSN

5962-01-189-1042

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: INTEGRATED AUTOMATIC DETECTION AND TRACKING SYSTEM AN/SYS-1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 028

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891042

NSN

5962-01-189-1042

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ROM/PROM FAMILY 028

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891042

NSN

5962-01-189-1042

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: INTEGRATED AUTOMATIC DETECTION AND TRACKING SYSTEM AN/SYS-1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

166271

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891043

NSN

5962-01-189-1043

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166271

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891043

NSN

5962-01-189-1043

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: INTEGRATED AUTOMATIC DETECTION AND TRACKING SYSTEM AN/SYS-1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

M38510/20904BJB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891043

NSN

5962-01-189-1043

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M38510/20904BJB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011891043

NSN

5962-01-189-1043

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: INTEGRATED AUTOMATIC DETECTION AND TRACKING SYSTEM AN/SYS-1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.4 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE