My Quote Request
5962-01-189-7752
20 Products
OP-04CY
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011897752
NSN
5962-01-189-7752
MFG
ANALOG DEVICES INC. DIV SANTA CLARA SITE
Description
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH PERFORMANCE AND LOW NOISE AND LOW DRIFT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
19-14466-00
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011896170
NSN
5962-01-189-6170
MFG
COMPAQ FEDERAL LLC
Description
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
Related Searches:
1914466-00
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011896170
NSN
5962-01-189-6170
MFG
COMPAQ FEDERAL LLC
Description
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
Related Searches:
SE5514F
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011896171
NSN
5962-01-189-6171
MFG
PHILIPS SEMICONDUCTORS INC
Description
DESIGN FUNCTION AND QUANTITY: 4 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: BIPOLAR
III END ITEM IDENTIFICATION: F111D
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
22-8009
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011896172
NSN
5962-01-189-6172
MFG
RACAL INSTRUMENTS WIRELESS SOLUTIONS TD AN AEROFLEX COMPANY
Description
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 1.485 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 13 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
M2764
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011896172
NSN
5962-01-189-6172
MFG
INTEL CORP SALES OFFICE
Description
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 1.485 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 13 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
390-0156-020
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011896197
NSN
5962-01-189-6197
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: PROGRAMMED AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: MR INTERFACE ASSY
Related Searches:
83705-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011896215
NSN
5962-01-189-6215
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.895 INCHES NOMINAL
BODY WIDTH: 0.775 INCHES NOMINAL
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HYBRID AND HERMETICALLY SEALED
III END ITEM IDENTIFICATION: F-15 A/C
INCLOSURE MATERIAL: CERAMIC OR METAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
2768873-18
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011896218
NSN
5962-01-189-6218
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: ALQ125 TEREC REM
Related Searches:
2768873-20
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011896219
NSN
5962-01-189-6219
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: ALQ125 TEREC REM
Related Searches:
6135251-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011896223
NSN
5962-01-189-6223
MFG
MMI/AMD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 8 ARRAY, LOGIC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND PROGRAMMED
III END ITEM IDENTIFICATION: F-15 A/C
INCLOSURE CONFIGURATION: FLAT PACK
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE
Related Searches:
240574-0209
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011896226
NSN
5962-01-189-6226
MFG
LOCKHEED MARTIN CORP ELECTRONICS AND MISSILES DIV
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/20302BEB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011896226
NSN
5962-01-189-6226
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
OL249035-02-09
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011896226
NSN
5962-01-189-6226
MFG
LOCKHEED MARTIN CORP ELECTRONICS AND MISSILES DIV
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
PT249035-02-09
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011896226
NSN
5962-01-189-6226
MFG
LOCKHEED MARTIN CORP ELECTRONICS AND MISSILES DIV
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 005
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011896226
NSN
5962-01-189-6226
ROM/PROM FAMILY 005
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011896226
NSN
5962-01-189-6226
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: PROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
A-2617
MICROCIRCUIT
NSN, MFG P/N
5962011897167
NSN
5962-01-189-7167
MFG
ADVANCED ANALOG INC. DBA INTERNATIONAL RECTIFIER
Description
MICROCIRCUIT
Related Searches:
DS7800H/883C
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011897169
NSN
5962-01-189-7169
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
DESIGN FUNCTION AND QUANTITY: 2 TRANSLATOR, VOLTAGE
Related Searches:
H990287-001B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011897169
NSN
5962-01-189-7169
MFG
RAYTHEON COMPANY
Description
DESIGN FUNCTION AND QUANTITY: 2 TRANSLATOR, VOLTAGE
Related Searches:
242832-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011897364
NSN
5962-01-189-7364
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MICROCIRCUIT,DIGITAL