My Quote Request
5962-01-192-4667
20 Products
SN4885W
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011924667
NSN
5962-01-192-4667
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 DRIVER, LOGIC LEVEL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011924667
NSN
5962-01-192-4667
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 DRIVER, LOGIC LEVEL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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SN4885
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011924667
NSN
5962-01-192-4667
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 DRIVER, LOGIC LEVEL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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SN4885D
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011924667
NSN
5962-01-192-4667
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 DRIVER, LOGIC LEVEL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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6100277
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011924668
NSN
5962-01-192-4668
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BURN IN
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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6100277-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011924668
NSN
5962-01-192-4668
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BURN IN
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962011924668
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5962-01-192-4668
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BURN IN
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011924668
NSN
5962-01-192-4668
MFG
MICROSEMI CORP.-INTEGRATED PRODUCTS
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BURN IN
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011924669
NSN
5962-01-192-4669
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND STATIC OPERATION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962011924669
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5962-01-192-4669
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EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND STATIC OPERATION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
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511557-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011924669
NSN
5962-01-192-4669
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND STATIC OPERATION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
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511557-3
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011924669
NSN
5962-01-192-4669
MFG
TELEPHONICS CORPORATION DBA COMMAND SYSTEMS DIVISION DIV COMMAND SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND STATIC OPERATION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
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5962011924669
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5962-01-192-4669
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5962011924669
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5962-01-192-4669
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND STATIC OPERATION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE
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5962011924671
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5962-01-192-4671
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BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MICROCIRCUIT,MEMORY
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5962011924671
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5962-01-192-4671
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HEWLETT PACKARD CO
Description
MICROCIRCUIT,MEMORY
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NSN, MFG P/N
5962011924671
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5962-01-192-4671
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HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - TORRANCE
Description
MICROCIRCUIT,MEMORY
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5962011924671
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5962-01-192-4671
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CRYTOLOGIC SYSTEMS GROUP
Description
MICROCIRCUIT,MEMORY
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ADVANCED MICRO DEVICES INC DBA A M D
Description
MICROCIRCUIT,MEMORY
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INTEL CORP SALES OFFICE
Description
MICROCIRCUIT,MEMORY
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Description
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