My Quote Request
5962-01-197-9141
20 Products
NCS1735
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962011979141
NSN
5962-01-197-9141
MFG
MICROCHIP TECHNOLOGY INC
Description
BODY HEIGHT: 0.625 INCHES NOMINAL
BODY LENGTH: 0.625 INCHES NOMINAL
BODY WIDTH: 0.150 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND BURN IN
III END ITEM IDENTIFICATION: 6605-00-022-7893 INERTIAL MEASUR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: SINGLE-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 105.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 11 PIN
TEST DATA DOCUMENT: 88818-A574A926 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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704AS509-21
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011979148
NSN
5962-01-197-9148
MFG
NAVAL AIR SYSTEMS COMMAND
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
FEATURES PROVIDED: PROGRAMMABLE
MEMORY DEVICE TYPE: ROM
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
890509-21
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011979148
NSN
5962-01-197-9148
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
FEATURES PROVIDED: PROGRAMMABLE
MEMORY DEVICE TYPE: ROM
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
1164AS423
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011979388
NSN
5962-01-197-9388
MFG
NAVAL AIR SYSTEMS COMMAND
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 DRIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND HIGH PERFORMANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 10.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 18.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
2077463-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011979388
NSN
5962-01-197-9388
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 DRIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND HIGH PERFORMANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 10.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 18.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011979388
NSN
5962-01-197-9388
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 DRIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND HIGH PERFORMANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 10.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 18.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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A15170
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011979515
NSN
5962-01-197-9515
MFG
MBDA UK LTD
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND W/RESISTOR
III END ITEM IDENTIFICATION: 6930-00-903-7427 TRAINER,FLIGHT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 1 INPUT AND DUAL 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 36.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011979515
NSN
5962-01-197-9515
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND W/RESISTOR
III END ITEM IDENTIFICATION: 6930-00-903-7427 TRAINER,FLIGHT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 1 INPUT AND DUAL 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 36.0 VOLTS MAXIMUM POWER SOURCE
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SCD51990792-001
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011979515
NSN
5962-01-197-9515
MFG
HARRIS CORP GOVERNMENT AEROSPACE SYSTEMS DIV
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND W/RESISTOR
III END ITEM IDENTIFICATION: 6930-00-903-7427 TRAINER,FLIGHT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 1 INPUT AND DUAL 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 36.0 VOLTS MAXIMUM POWER SOURCE
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VA-85-0948-001
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011979515
NSN
5962-01-197-9515
MFG
SELEX GALILEO LTD
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.275 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND W/RESISTOR
III END ITEM IDENTIFICATION: 6930-00-903-7427 TRAINER,FLIGHT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 1 INPUT AND DUAL 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 36.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011979516
NSN
5962-01-197-9516
MFG
ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS
Description
BODY HEIGHT: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.560 INCHES MINIMUM AND 0.660 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-8 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, BUFFER
FEATURES PROVIDED: HIGH SPEED
III END ITEM IDENTIFICATION: 6930-00-903-7427 TRAINER,FLIGHT
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011979516
NSN
5962-01-197-9516
MFG
ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS
Description
BODY HEIGHT: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.560 INCHES MINIMUM AND 0.660 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-8 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, BUFFER
FEATURES PROVIDED: HIGH SPEED
III END ITEM IDENTIFICATION: 6930-00-903-7427 TRAINER,FLIGHT
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
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9637TC
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011979518
NSN
5962-01-197-9518
MFG
ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP
Description
BODY HEIGHT: 0.110 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
BODY LENGTH: 0.365 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE DIFFERENTIAL
FEATURES PROVIDED: SCHOTTKY AND HIGH IMPEDANCE AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.3 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011979518
NSN
5962-01-197-9518
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.110 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
BODY LENGTH: 0.365 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE DIFFERENTIAL
FEATURES PROVIDED: SCHOTTKY AND HIGH IMPEDANCE AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.3 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011979519
NSN
5962-01-197-9519
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, INSTRUMENTATION
FEATURES PROVIDED: FREQUENCY COMPENSATED AND INTERNALLY COMPENSATED AND LOW DRIFT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
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5962-01-197-9519
MFG
ANALOG DEVICES INC. DIV SANTA CLARA SITE
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, INSTRUMENTATION
FEATURES PROVIDED: FREQUENCY COMPENSATED AND INTERNALLY COMPENSATED AND LOW DRIFT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962011979519
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5962-01-197-9519
MFG
PLASTIC BINDING CORP
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, INSTRUMENTATION
FEATURES PROVIDED: FREQUENCY COMPENSATED AND INTERNALLY COMPENSATED AND LOW DRIFT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011979519
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5962-01-197-9519
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, INSTRUMENTATION
FEATURES PROVIDED: FREQUENCY COMPENSATED AND INTERNALLY COMPENSATED AND LOW DRIFT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962011979519
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5962-01-197-9519
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, INSTRUMENTATION
FEATURES PROVIDED: FREQUENCY COMPENSATED AND INTERNALLY COMPENSATED AND LOW DRIFT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE
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5962011979520
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5962-01-197-9520
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MINIMUM POWER SOURCE