My Quote Request
5962-01-200-3558
20 Products
ROM/PROM FAMILY 069
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012003558
NSN
5962-01-200-3558
ROM/PROM FAMILY 069
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012003558
NSN
5962-01-200-3558
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.195 INCHES NOMINAL
BODY LENGTH: 1.250 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 6625-01-073-6849 SYNTHESIZER,ELE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: PROGRAMMED MM6636-1
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012003558
NSN
5962-01-200-3558
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.195 INCHES NOMINAL
BODY LENGTH: 1.250 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 6625-01-073-6849 SYNTHESIZER,ELE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: PROGRAMMED MM6636-1
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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6404233-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012003667
NSN
5962-01-200-3667
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.086 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
BODY LENGTH: 1.950 INCHES MINIMUM AND 2.090 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
FEATURES PROVIDED: MONOLITHIC AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 29 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012003667
NSN
5962-01-200-3667
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.086 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
BODY LENGTH: 1.950 INCHES MINIMUM AND 2.090 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
FEATURES PROVIDED: MONOLITHIC AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 29 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE
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725004-157
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012003873
NSN
5962-01-200-3873
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.312 INCHES NOMINAL
BODY LENGTH: 1.250 INCHES NOMINAL
BODY WIDTH: 0.625 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 SCALER, POSITION
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM TOTAL SUPPLY
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012003873
NSN
5962-01-200-3873
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
BODY HEIGHT: 0.312 INCHES NOMINAL
BODY LENGTH: 1.250 INCHES NOMINAL
BODY WIDTH: 0.625 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 SCALER, POSITION
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM TOTAL SUPPLY
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012003873
NSN
5962-01-200-3873
MFG
LANSDALE SEMICONDUCTOR INC .
Description
BODY HEIGHT: 0.312 INCHES NOMINAL
BODY LENGTH: 1.250 INCHES NOMINAL
BODY WIDTH: 0.625 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 SCALER, POSITION
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM TOTAL SUPPLY
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S8243F883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012003873
NSN
5962-01-200-3873
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.312 INCHES NOMINAL
BODY LENGTH: 1.250 INCHES NOMINAL
BODY WIDTH: 0.625 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 SCALER, POSITION
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM TOTAL SUPPLY
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012003873
NSN
5962-01-200-3873
MFG
LANSDALE SEMICONDUCTOR INC .
Description
BODY HEIGHT: 0.312 INCHES NOMINAL
BODY LENGTH: 1.250 INCHES NOMINAL
BODY WIDTH: 0.625 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 SCALER, POSITION
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM TOTAL SUPPLY
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6135742-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012004133
NSN
5962-01-200-4133
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.360 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 03640-6135742 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 45.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012004133
NSN
5962-01-200-4133
MFG
MARCONI CIRCUIT TECHNOLOGY CORP MICROELECTRONICS DIV
Description
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.360 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 03640-6135742 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 45.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012004133
NSN
5962-01-200-4133
MFG
MARCONI CIRCUIT TECHNOLOGY CORP MICROELECTRONICS DIV
Description
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.360 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 03640-6135742 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 45.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012004134
NSN
5962-01-200-4134
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.320 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
BODY LENGTH: 1.565 INCHES MINIMUM AND 1.585 INCHES MAXIMUM
BODY WIDTH: 1.065 INCHES MINIMUM AND 1.085 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, LOG
FEATURES PROVIDED: HYBRID AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 65.0 DEG CELSIUS
SPECIAL FEATURES: INPUT POWER 0.0 DBM MAX; CENTER FREQUENCY 29.0 MHZ MIN AND 31.0 MHZ MAX
STORAGE TEMP RANGE: -62.0 TO 75.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 15 PIN
TEST DATA DOCUMENT: 10001-2937649 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 13.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012004134
NSN
5962-01-200-4134
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
BODY HEIGHT: 0.320 INCHES MINIMUM AND 0.380 INCHES MAXIMUM
BODY LENGTH: 1.565 INCHES MINIMUM AND 1.585 INCHES MAXIMUM
BODY WIDTH: 1.065 INCHES MINIMUM AND 1.085 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, LOG
FEATURES PROVIDED: HYBRID AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 65.0 DEG CELSIUS
SPECIAL FEATURES: INPUT POWER 0.0 DBM MAX; CENTER FREQUENCY 29.0 MHZ MIN AND 31.0 MHZ MAX
STORAGE TEMP RANGE: -62.0 TO 75.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 15 PIN
TEST DATA DOCUMENT: 10001-2937649 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 13.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012004137
NSN
5962-01-200-4137
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012004137
NSN
5962-01-200-4137
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012004137
NSN
5962-01-200-4137
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012004137
NSN
5962-01-200-4137
ROM/PROM FAMILY 013
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012004137
NSN
5962-01-200-4137
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
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156-0579-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012004138
NSN
5962-01-200-4138
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012004138
NSN
5962-01-200-4138
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
MICROCIRCUIT,DIGITAL