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5962-01-203-6756

20 Products

ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036756

NSN

5962-01-203-6756

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ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036756

NSN

5962-01-203-6756

MFG

DLA LAND AND MARITIME

408653

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012036153

NSN

5962-01-203-6153

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408653

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012036153

NSN

5962-01-203-6153

MFG

TARGET CORPORATION DBA TARGET

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 14933-80012 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

8001204JB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012036153

NSN

5962-01-203-6153

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8001204JB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012036153

NSN

5962-01-203-6153

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 14933-80012 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 027

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012036153

NSN

5962-01-203-6153

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ROM/PROM FAMILY 027

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012036153

NSN

5962-01-203-6153

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 14933-80012 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

0310228P001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036154

NSN

5962-01-203-6154

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0310228P001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036154

NSN

5962-01-203-6154

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 BUFFER, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

74H40PC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036154

NSN

5962-01-203-6154

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74H40PC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036154

NSN

5962-01-203-6154

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 BUFFER, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

DM74H40N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036154

NSN

5962-01-203-6154

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DM74H40N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036154

NSN

5962-01-203-6154

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 BUFFER, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SN74H40N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036154

NSN

5962-01-203-6154

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SN74H40N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036154

NSN

5962-01-203-6154

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 BUFFER, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 12.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SNJ54LS04W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036155

NSN

5962-01-203-6155

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SNJ54LS04W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036155

NSN

5962-01-203-6155

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: MO-004AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 6 INVERTER, DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY
III END ITEM IDENTIFICATION: 6605-01-094-4518 INERTIAL NAVIGA
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

725000-651

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036157

NSN

5962-01-203-6157

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725000-651

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036157

NSN

5962-01-203-6157

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HIGH VOLTAGE AND HERMETICALLY SEALED AND MONOLITHIC
III END ITEM IDENTIFICATION: COUNTER-DISPLAY SET AN/UYQ-21(V)
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES OPTION GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

9112DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036157

NSN

5962-01-203-6157

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9112DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036157

NSN

5962-01-203-6157

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HIGH VOLTAGE AND HERMETICALLY SEALED AND MONOLITHIC
III END ITEM IDENTIFICATION: COUNTER-DISPLAY SET AN/UYQ-21(V)
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES OPTION GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

DMS 87019B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036157

NSN

5962-01-203-6157

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DMS 87019B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036157

NSN

5962-01-203-6157

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HIGH VOLTAGE AND HERMETICALLY SEALED AND MONOLITHIC
III END ITEM IDENTIFICATION: COUNTER-DISPLAY SET AN/UYQ-21(V)
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES OPTION GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

6403577-1

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012036158

NSN

5962-01-203-6158

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6403577-1

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012036158

NSN

5962-01-203-6158

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV

Description

(NON-CORE DATA) BIT QUANTITY: 16
BODY HEIGHT: 0.420 INCHES MAXIMUM
BODY LENGTH: 3.100 INCHES MINIMUM AND 3.140 INCHES MAXIMUM
BODY WIDTH: 2.600 INCHES MINIMUM AND 2.640 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DC TO SYNCHRO AND 1 CONVERTER, DIGITAL TO RESOLVER
FEATURES PROVIDED: HYBRID AND BURN IN AND COMPATIBLE CMOS
III END ITEM IDENTIFICATION: 4920-01-111-2981 AUTOMATIC TEST SYSTEM
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 23 INPUT
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD

DSRC5001/2245

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012036158

NSN

5962-01-203-6158

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DSRC5001/2245

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012036158

NSN

5962-01-203-6158

MFG

NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION

Description

(NON-CORE DATA) BIT QUANTITY: 16
BODY HEIGHT: 0.420 INCHES MAXIMUM
BODY LENGTH: 3.100 INCHES MINIMUM AND 3.140 INCHES MAXIMUM
BODY WIDTH: 2.600 INCHES MINIMUM AND 2.640 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DC TO SYNCHRO AND 1 CONVERTER, DIGITAL TO RESOLVER
FEATURES PROVIDED: HYBRID AND BURN IN AND COMPATIBLE CMOS
III END ITEM IDENTIFICATION: 4920-01-111-2981 AUTOMATIC TEST SYSTEM
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 23 INPUT
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD

DSRC5001/2445

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012036158

NSN

5962-01-203-6158

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DSRC5001/2445

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012036158

NSN

5962-01-203-6158

MFG

NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION

Description

(NON-CORE DATA) BIT QUANTITY: 16
BODY HEIGHT: 0.420 INCHES MAXIMUM
BODY LENGTH: 3.100 INCHES MINIMUM AND 3.140 INCHES MAXIMUM
BODY WIDTH: 2.600 INCHES MINIMUM AND 2.640 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DC TO SYNCHRO AND 1 CONVERTER, DIGITAL TO RESOLVER
FEATURES PROVIDED: HYBRID AND BURN IN AND COMPATIBLE CMOS
III END ITEM IDENTIFICATION: 4920-01-111-2981 AUTOMATIC TEST SYSTEM
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 23 INPUT
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD

808357

MICROCIRCUIT

NSN, MFG P/N

5962012036642

NSN

5962-01-203-6642

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808357

MICROCIRCUIT

NSN, MFG P/N

5962012036642

NSN

5962-01-203-6642

MFG

NORTH ATLANTIC INDUSTRIES INC.

808043

MICROCIRCUIT

NSN, MFG P/N

5962012036643

NSN

5962-01-203-6643

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808043

MICROCIRCUIT

NSN, MFG P/N

5962012036643

NSN

5962-01-203-6643

MFG

NORTH ATLANTIC INDUSTRIES INC.

808003

MICROCIRCUIT

NSN, MFG P/N

5962012036647

NSN

5962-01-203-6647

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808003

MICROCIRCUIT

NSN, MFG P/N

5962012036647

NSN

5962-01-203-6647

MFG

NORTH ATLANTIC INDUSTRIES INC.

KS-21322-L1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012036755

NSN

5962-01-203-6755

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KS-21322-L1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012036755

NSN

5962-01-203-6755

MFG

LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP

42638-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036756

NSN

5962-01-203-6756

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42638-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012036756

NSN

5962-01-203-6756

MFG

RAYTHEON COMPANY DBA RAYTHEON