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5962-01-203-9742

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ROM/PROM FAMILY 237

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039742

NSN

5962-01-203-9742

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ROM/PROM FAMILY 237

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039742

NSN

5962-01-203-9742

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

MC75492P

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012039737

NSN

5962-01-203-9737

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MC75492P

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012039737

NSN

5962-01-203-9737

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 6 DRIVER, LIGHT-EMITTING DIODE
FEATURES PROVIDED: LOW CURRENT AND HIGH GAIN AND LOW POWER
III END ITEM IDENTIFICATION: 6625-01-069-5949 TEST SET ELECTR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 800.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 10.0 VOLTS MAXIMUM POWER SOURCE

SN75492N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012039737

NSN

5962-01-203-9737

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SN75492N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012039737

NSN

5962-01-203-9737

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 6 DRIVER, LIGHT-EMITTING DIODE
FEATURES PROVIDED: LOW CURRENT AND HIGH GAIN AND LOW POWER
III END ITEM IDENTIFICATION: 6625-01-069-5949 TEST SET ELECTR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 800.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 10.0 VOLTS MAXIMUM POWER SOURCE

1820-0904

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012039738

NSN

5962-01-203-9738

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1820-0904

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012039738

NSN

5962-01-203-9738

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

(NON-CORE DATA) BIT QUANTITY: 5
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, MAGNITUDE
FEATURES PROVIDED: EXPANDABLE AND W/ENABLE AND LOW POWER
III END ITEM IDENTIFICATION: 6625-01-069-5945 TEST SET,ELECTR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MINIMUM POWER SOURCE AND 150.0 VOLTS MAXIMUM POWER SOURCE

93L24PC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012039738

NSN

5962-01-203-9738

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93L24PC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012039738

NSN

5962-01-203-9738

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 5
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, MAGNITUDE
FEATURES PROVIDED: EXPANDABLE AND W/ENABLE AND LOW POWER
III END ITEM IDENTIFICATION: 6625-01-069-5945 TEST SET,ELECTR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MINIMUM POWER SOURCE AND 150.0 VOLTS MAXIMUM POWER SOURCE

41670

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039739

NSN

5962-01-203-9739

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41670

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039739

NSN

5962-01-203-9739

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

722917-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039739

NSN

5962-01-203-9739

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722917-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039739

NSN

5962-01-203-9739

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

93436DMQB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039739

NSN

5962-01-203-9739

View More Info

93436DMQB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039739

NSN

5962-01-203-9739

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 237

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039739

NSN

5962-01-203-9739

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ROM/PROM FAMILY 237

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039739

NSN

5962-01-203-9739

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

41640

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039740

NSN

5962-01-203-9740

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41640

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039740

NSN

5962-01-203-9740

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

722917-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039740

NSN

5962-01-203-9740

View More Info

722917-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039740

NSN

5962-01-203-9740

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

93436DMQB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039740

NSN

5962-01-203-9740

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93436DMQB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039740

NSN

5962-01-203-9740

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 025

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039740

NSN

5962-01-203-9740

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ROM/PROM FAMILY 025

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039740

NSN

5962-01-203-9740

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

41572

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039741

NSN

5962-01-203-9741

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41572

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039741

NSN

5962-01-203-9741

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

722917-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039741

NSN

5962-01-203-9741

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722917-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039741

NSN

5962-01-203-9741

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

93436DMQB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039741

NSN

5962-01-203-9741

View More Info

93436DMQB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039741

NSN

5962-01-203-9741

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 237

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039741

NSN

5962-01-203-9741

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ROM/PROM FAMILY 237

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039741

NSN

5962-01-203-9741

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

41578

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039742

NSN

5962-01-203-9742

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41578

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039742

NSN

5962-01-203-9742

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

722917-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039742

NSN

5962-01-203-9742

View More Info

722917-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039742

NSN

5962-01-203-9742

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

93436DMQB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039742

NSN

5962-01-203-9742

View More Info

93436DMQB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012039742

NSN

5962-01-203-9742

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.199 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: COMPUTER-DISPLAY SET AN/UYQ-21(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE