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5962-01-215-4066

20 Products

LM103H-2.0

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154066

NSN

5962-01-215-4066

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LM103H-2.0

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154066

NSN

5962-01-215-4066

MFG

NATIONAL SEMICONDUCTOR CORPORATION

2804R-883C

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154074

NSN

5962-01-215-4074

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2804R-883C

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154074

NSN

5962-01-215-4074

MFG

SPRAGUE ELECTRIC CO WORLD HQS

A06726

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154074

NSN

5962-01-215-4074

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A06726

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154074

NSN

5962-01-215-4074

MFG

MBDA UK LTD

SG2804J/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154074

NSN

5962-01-215-4074

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SG2804J/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154074

NSN

5962-01-215-4074

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

ULS-2804R-MIL

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154074

NSN

5962-01-215-4074

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ULS-2804R-MIL

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154074

NSN

5962-01-215-4074

MFG

SPRAGUE ELECTRIC CO WORLD HQS

ULS2804R

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154074

NSN

5962-01-215-4074

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ULS2804R

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154074

NSN

5962-01-215-4074

MFG

SPRAGUE ELECTRIC CO WORLD HQS

ULS2804R/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154074

NSN

5962-01-215-4074

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ULS2804R/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154074

NSN

5962-01-215-4074

MFG

SPRAGUE ELECTRIC CO WORLD HQS

5962-3807908BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012154076

NSN

5962-01-215-4076

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5962-3807908BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012154076

NSN

5962-01-215-4076

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/07908BEB
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: 3-STATE OUTPUT AND W/ENABLE AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 550.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/79
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/79 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5962-3807908BEX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012154076

NSN

5962-01-215-4076

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5962-3807908BEX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012154076

NSN

5962-01-215-4076

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/07908BEB
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: 3-STATE OUTPUT AND W/ENABLE AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 550.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/79
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/79 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

74S253

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012154076

NSN

5962-01-215-4076

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74S253

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012154076

NSN

5962-01-215-4076

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/07908BEB
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: 3-STATE OUTPUT AND W/ENABLE AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 550.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/79
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/79 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/07908BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012154076

NSN

5962-01-215-4076

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M38510/07908BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012154076

NSN

5962-01-215-4076

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/07908BEB
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: 3-STATE OUTPUT AND W/ENABLE AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 550.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/79
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/79 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SN74S253J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012154076

NSN

5962-01-215-4076

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SN74S253J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012154076

NSN

5962-01-215-4076

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/07908BEB
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: 3-STATE OUTPUT AND W/ENABLE AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 550.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/79
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/79 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 26.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154229

NSN

5962-01-215-4229

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ROM/PROM FAMILY 005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154229

NSN

5962-01-215-4229

MFG

DLA LAND AND MARITIME

S82S129F/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154229

NSN

5962-01-215-4229

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S82S129F/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154229

NSN

5962-01-215-4229

MFG

PHILIPS SEMICONDUCTORS INC

SM-A-813886

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154229

NSN

5962-01-215-4229

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SM-A-813886

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154229

NSN

5962-01-215-4229

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

SM-A-838651-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154229

NSN

5962-01-215-4229

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SM-A-838651-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154229

NSN

5962-01-215-4229

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

SM-A-838915-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154229

NSN

5962-01-215-4229

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SM-A-838915-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154229

NSN

5962-01-215-4229

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

MC1436U

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154353

NSN

5962-01-215-4353

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MC1436U

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012154353

NSN

5962-01-215-4353

MFG

FREESCALE SEMICONDUCTOR INC.

G284063-302

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154354

NSN

5962-01-215-4354

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G284063-302

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154354

NSN

5962-01-215-4354

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154354

NSN

5962-01-215-4354

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012154354

NSN

5962-01-215-4354

MFG

DLA LAND AND MARITIME