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5962-01-216-1144

20 Products

M38510/33002BAX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012161144

NSN

5962-01-216-1144

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M38510/33002BAX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012161144

NSN

5962-01-216-1144

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33002BAA
DESIGN FUNCTION AND QUANTITY: 6 GATE, INVERTING
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 84.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/330
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/330 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 7.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 6.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

51-P08410T001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012161869

NSN

5962-01-216-1869

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51-P08410T001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012161869

NSN

5962-01-216-1869

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/20802BJX

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012161869

NSN

5962-01-216-1869

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M38510/20802BJX

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012161869

NSN

5962-01-216-1869

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 026

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012161869

NSN

5962-01-216-1869

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ROM/PROM FAMILY 026

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012161869

NSN

5962-01-216-1869

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

51-P08411T001

MICROCIRCUIT

NSN, MFG P/N

5962012161870

NSN

5962-01-216-1870

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51-P08411T001

MICROCIRCUIT

NSN, MFG P/N

5962012161870

NSN

5962-01-216-1870

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

ROM/PROM FAMILY 026

MICROCIRCUIT

NSN, MFG P/N

5962012161870

NSN

5962-01-216-1870

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ROM/PROM FAMILY 026

MICROCIRCUIT

NSN, MFG P/N

5962012161870

NSN

5962-01-216-1870

MFG

DLA LAND AND MARITIME

1807085

MICROCIRCUIT

NSN, MFG P/N

5962012161881

NSN

5962-01-216-1881

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1807085

MICROCIRCUIT

NSN, MFG P/N

5962012161881

NSN

5962-01-216-1881

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION

1807084

MICROCIRCUIT

NSN, MFG P/N

5962012161882

NSN

5962-01-216-1882

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1807084

MICROCIRCUIT

NSN, MFG P/N

5962012161882

NSN

5962-01-216-1882

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION

1064170-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162069

NSN

5962-01-216-2069

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1064170-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162069

NSN

5962-01-216-2069

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

G292234-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162069

NSN

5962-01-216-2069

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G292234-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162069

NSN

5962-01-216-2069

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162069

NSN

5962-01-216-2069

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162069

NSN

5962-01-216-2069

MFG

DLA LAND AND MARITIME

19-07611-003

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012162071

NSN

5962-01-216-2071

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19-07611-003

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012162071

NSN

5962-01-216-2071

MFG

KEY TRONIC CORP MS 140

36-0995-003

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012162071

NSN

5962-01-216-2071

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36-0995-003

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012162071

NSN

5962-01-216-2071

MFG

KEY TRONIC CORP MS 140

ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012162071

NSN

5962-01-216-2071

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ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012162071

NSN

5962-01-216-2071

MFG

DLA LAND AND MARITIME

51-P16377A024

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012162073

NSN

5962-01-216-2073

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51-P16377A024

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012162073

NSN

5962-01-216-2073

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

MIC76T

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012162073

NSN

5962-01-216-2073

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MIC76T

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012162073

NSN

5962-01-216-2073

MFG

FREESCALE SEMICONDUCTOR INC.

952643-13B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162074

NSN

5962-01-216-2074

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952643-13B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162074

NSN

5962-01-216-2074

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

HM1-7611-8

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162074

NSN

5962-01-216-2074

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HM1-7611-8

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162074

NSN

5962-01-216-2074

MFG

INTERSIL CORPORATION

MM5301-1D/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162074

NSN

5962-01-216-2074

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MM5301-1D/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162074

NSN

5962-01-216-2074

MFG

MMI/AMD

ROM/PROM FAMILY 005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162074

NSN

5962-01-216-2074

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ROM/PROM FAMILY 005

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012162074

NSN

5962-01-216-2074

MFG

DLA LAND AND MARITIME