My Quote Request
5962-01-220-5840
20 Products
ROM/PROM FAMILY 013
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012205840
NSN
5962-01-220-5840
ROM/PROM FAMILY 013
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012205840
NSN
5962-01-220-5840
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND W/ENABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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M8080A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012205288
NSN
5962-01-220-5288
MFG
INTEL CORP SALES OFFICE
Description
MICROCIRCUIT,DIGITAL
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HM1-6504-2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012205292
NSN
5962-01-220-5292
MFG
INTERSIL CORPORATION
Description
MICROCIRCUIT,DIGITAL
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3320115
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012205293
NSN
5962-01-220-5293
MFG
ALLIED-SIGNAL INC DBA ALLIED-SIGNAL AEROSPACE CO ELECTRODYNAMICS DIV
Description
MICROCIRCUIT,DIGITAL
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3194241
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012205297
NSN
5962-01-220-5297
MFG
ALLIED-SIGNAL INC DBA ALLIED-SIGNAL AEROSPACE CO ELECTRODYNAMICS DIV
Description
MICROCIRCUIT,DIGITAL
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3184601-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012205298
NSN
5962-01-220-5298
MFG
HONEYWELL INTERNATIONAL INC . DBA HONEYWELL DIV AEROSPACE - TEMPE WEST WARNER ROAD
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012205834
NSN
5962-01-220-5834
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
MICROCIRCUIT,LINEAR
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3597095-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012205835
NSN
5962-01-220-5835
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV
Description
MICROCIRCUIT,LINEAR
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MN3349
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012205835
NSN
5962-01-220-5835
MFG
SPECTRUM MICROWAVE INC. DBA MICRO NETWORKS DIV SPECTRUM MICROWAVE WORCESTER
Description
MICROCIRCUIT,LINEAR
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MN3349H/B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012205835
NSN
5962-01-220-5835
MFG
SPECTRUM MICROWAVE INC. DBA MICRO NETWORKS DIV SPECTRUM MICROWAVE WORCESTER
Description
MICROCIRCUIT,LINEAR
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6011623-001
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012205836
NSN
5962-01-220-5836
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
MICROCIRCUIT,LINEAR
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R5106
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012205836
NSN
5962-01-220-5836
MFG
PERKINELMER ILLUMINATION INC D IV PERKINELMER ILLUMINATION
Description
MICROCIRCUIT,LINEAR
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0100-3909-A
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012205838
NSN
5962-01-220-5838
MFG
GENRAD INC
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012205838
NSN
5962-01-220-5838
MFG
EXAR INTEGRATED SYSTEMS
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012205838
NSN
5962-01-220-5838
MFG
GENRAD INC
Description
MICROCIRCUIT,LINEAR
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012205839
NSN
5962-01-220-5839
MFG
GENRAD INC
Description
MICROCIRCUIT,LINEAR
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CH1267A
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012205839
NSN
5962-01-220-5839
MFG
CERMETEK
Description
MICROCIRCUIT,LINEAR
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435538-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012205840
NSN
5962-01-220-5840
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND W/ENABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
441858-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012205840
NSN
5962-01-220-5840
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND W/ENABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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M38510/20702BEX
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012205840
NSN
5962-01-220-5840
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND W/ENABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 739.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE