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5962-01-223-9447

20 Products

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239447

NSN

5962-01-223-9447

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239447

NSN

5962-01-223-9447

MFG

DLA LAND AND MARITIME

AP1750-0284

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012239278

NSN

5962-01-223-9278

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AP1750-0284

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012239278

NSN

5962-01-223-9278

MFG

ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS

DMS 89062B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012239278

NSN

5962-01-223-9278

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DMS 89062B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012239278

NSN

5962-01-223-9278

MFG

DLA LAND AND MARITIME

16-164727-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012239280

NSN

5962-01-223-9280

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16-164727-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012239280

NSN

5962-01-223-9280

MFG

NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. DIV INTELLIGENCE SYSTEMS DIVISION/ESL

6903W14P001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012239280

NSN

5962-01-223-9280

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6903W14P001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012239280

NSN

5962-01-223-9280

MFG

AMETEK INC. D IV AEROSPACE & DEFENSE

M38510/31401BEX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012239280

NSN

5962-01-223-9280

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M38510/31401BEX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012239280

NSN

5962-01-223-9280

MFG

FREESCALE SEMICONDUCTOR INC.

17681500

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012239442

NSN

5962-01-223-9442

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17681500

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012239442

NSN

5962-01-223-9442

MFG

TX TECHNOLOGY CORP. DBA CHATLOS SYSTEMS

LM79M12CH

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012239442

NSN

5962-01-223-9442

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LM79M12CH

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012239442

NSN

5962-01-223-9442

MFG

NATIONAL SEMICONDUCTOR CORPORATION

OP17CJ/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012239443

NSN

5962-01-223-9443

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OP17CJ/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012239443

NSN

5962-01-223-9443

MFG

ANALOG DEVICES INC. DIV SANTA CLARA SITE

HA1-5084-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012239444

NSN

5962-01-223-9444

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HA1-5084-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012239444

NSN

5962-01-223-9444

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.790 INCHES NOMINAL
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH SLEW RATE AND MONOLITHIC AND HIGH IMPEDANCE AND LOW DRIFT AND LOW CURRENT
III END ITEM IDENTIFICATION: 7025-01-161-9389 DATA MULTIPLEXER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 40.0 VOLTS MAXIMUM POWER SOURCE

M38510/11906BCA

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012239444

NSN

5962-01-223-9444

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M38510/11906BCA

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012239444

NSN

5962-01-223-9444

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.790 INCHES NOMINAL
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH SLEW RATE AND MONOLITHIC AND HIGH IMPEDANCE AND LOW DRIFT AND LOW CURRENT
III END ITEM IDENTIFICATION: 7025-01-161-9389 DATA MULTIPLEXER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 40.0 VOLTS MAXIMUM POWER SOURCE

DS55452H/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012239445

NSN

5962-01-223-9445

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DS55452H/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012239445

NSN

5962-01-223-9445

MFG

NATIONAL SEMICONDUCTOR CORPORATION

DS55452H/MIL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012239445

NSN

5962-01-223-9445

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DS55452H/MIL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012239445

NSN

5962-01-223-9445

MFG

NATIONAL SEMICONDUCTOR CORPORATION

H990294-1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012239445

NSN

5962-01-223-9445

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H990294-1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012239445

NSN

5962-01-223-9445

MFG

RAYTHEON COMPANY

68399201-015

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239446

NSN

5962-01-223-9446

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68399201-015

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239446

NSN

5962-01-223-9446

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: COMMUNICATIONS CONTROL CENTER AN/TSQ-111
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/20802BJB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239446

NSN

5962-01-223-9446

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M38510/20802BJB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239446

NSN

5962-01-223-9446

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: COMMUNICATIONS CONTROL CENTER AN/TSQ-111
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 026

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239446

NSN

5962-01-223-9446

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ROM/PROM FAMILY 026

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239446

NSN

5962-01-223-9446

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: COMMUNICATIONS CONTROL CENTER AN/TSQ-111
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

136356-004

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239447

NSN

5962-01-223-9447

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136356-004

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239447

NSN

5962-01-223-9447

MFG

ASTRONAUTICS CORPORATION OF AMERICA

7802201JB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239447

NSN

5962-01-223-9447

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7802201JB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239447

NSN

5962-01-223-9447

MFG

DLA LAND AND MARITIME

ES1274

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239447

NSN

5962-01-223-9447

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ES1274

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012239447

NSN

5962-01-223-9447

MFG

ASTRONAUTICS CORPORATION OF AMERICA