My Quote Request
5962-01-223-9447
20 Products
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012239447
NSN
5962-01-223-9447
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
AP1750-0284
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962012239278
NSN
5962-01-223-9278
AP1750-0284
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962012239278
NSN
5962-01-223-9278
MFG
ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS
Description
MICROCIRCUIT,DIGITAL-LINEAR
Related Searches:
DMS 89062B
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962012239278
NSN
5962-01-223-9278
DMS 89062B
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962012239278
NSN
5962-01-223-9278
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,DIGITAL-LINEAR
Related Searches:
16-164727-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012239280
NSN
5962-01-223-9280
MFG
NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. DIV INTELLIGENCE SYSTEMS DIVISION/ESL
Description
MICROCIRCUIT,DIGITAL
Related Searches:
6903W14P001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012239280
NSN
5962-01-223-9280
MFG
AMETEK INC. D IV AEROSPACE & DEFENSE
Description
MICROCIRCUIT,DIGITAL
Related Searches:
M38510/31401BEX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012239280
NSN
5962-01-223-9280
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MICROCIRCUIT,DIGITAL
Related Searches:
17681500
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012239442
NSN
5962-01-223-9442
MFG
TX TECHNOLOGY CORP. DBA CHATLOS SYSTEMS
Description
MICROCIRCUIT,LINEAR
Related Searches:
LM79M12CH
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012239442
NSN
5962-01-223-9442
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
MICROCIRCUIT,LINEAR
Related Searches:
OP17CJ/883
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012239443
NSN
5962-01-223-9443
MFG
ANALOG DEVICES INC. DIV SANTA CLARA SITE
Description
MICROCIRCUIT,LINEAR
Related Searches:
HA1-5084-2
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012239444
NSN
5962-01-223-9444
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.790 INCHES NOMINAL
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH SLEW RATE AND MONOLITHIC AND HIGH IMPEDANCE AND LOW DRIFT AND LOW CURRENT
III END ITEM IDENTIFICATION: 7025-01-161-9389 DATA MULTIPLEXER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 40.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/11906BCA
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012239444
NSN
5962-01-223-9444
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.790 INCHES NOMINAL
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH SLEW RATE AND MONOLITHIC AND HIGH IMPEDANCE AND LOW DRIFT AND LOW CURRENT
III END ITEM IDENTIFICATION: 7025-01-161-9389 DATA MULTIPLEXER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 40.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DS55452H/883
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012239445
NSN
5962-01-223-9445
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
MICROCIRCUIT,DIGITAL
Related Searches:
DS55452H/MIL
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012239445
NSN
5962-01-223-9445
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
MICROCIRCUIT,DIGITAL
Related Searches:
H990294-1B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012239445
NSN
5962-01-223-9445
MFG
RAYTHEON COMPANY
Description
MICROCIRCUIT,DIGITAL
Related Searches:
68399201-015
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012239446
NSN
5962-01-223-9446
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: COMMUNICATIONS CONTROL CENTER AN/TSQ-111
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/20802BJB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012239446
NSN
5962-01-223-9446
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: COMMUNICATIONS CONTROL CENTER AN/TSQ-111
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012239446
NSN
5962-01-223-9446
ROM/PROM FAMILY 026
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012239446
NSN
5962-01-223-9446
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR AND ELECTROSTATIC SENSITIVE AND HIGH IMPEDANCE
III END ITEM IDENTIFICATION: COMMUNICATIONS CONTROL CENTER AN/TSQ-111
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
136356-004
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012239447
NSN
5962-01-223-9447
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
MICROCIRCUIT,MEMORY
Related Searches:
7802201JB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012239447
NSN
5962-01-223-9447
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
ES1274
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012239447
NSN
5962-01-223-9447
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
MICROCIRCUIT,MEMORY

