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5962-01-229-0806
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ROM/PROM HEAD 120
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290806
NSN
5962-01-229-0806
ROM/PROM HEAD 120
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290806
NSN
5962-01-229-0806
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/21004BJA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/210
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/210 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/21004BJX
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290806
NSN
5962-01-229-0806
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/21004BJA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/210
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/210 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 55.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290807
NSN
5962-01-229-0807
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
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BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MICROCIRCUIT,MEMORY
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ADVANCED MICRO DEVICES INC DBA A M D
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290807
NSN
5962-01-229-0807
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
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5962012290808
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5962-01-229-0808
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290808
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MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290808
NSN
5962-01-229-0808
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
MICROCIRCUIT,MEMORY
Related Searches:
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290808
NSN
5962-01-229-0808
ROM/PROM FAMILY 088
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290808
NSN
5962-01-229-0808
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
1914930P9
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290809
NSN
5962-01-229-0809
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290809
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5962-01-229-0809
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290809
NSN
5962-01-229-0809
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
MICROCIRCUIT,MEMORY
Related Searches:
ROM/PROM FAMILY 088
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290809
NSN
5962-01-229-0809
ROM/PROM FAMILY 088
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290809
NSN
5962-01-229-0809
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
1914930P10
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290810
NSN
5962-01-229-0810
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290810
NSN
5962-01-229-0810
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290810
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5962-01-229-0810
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
MICROCIRCUIT,MEMORY
Related Searches:
ROM/PROM FAMILY 088
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290810
NSN
5962-01-229-0810
ROM/PROM FAMILY 088
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012290810
NSN
5962-01-229-0810
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
5E8071/293-0001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012290811
NSN
5962-01-229-0811
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
MICROCIRCUIT,DIGITAL
Related Searches:
5E8077/03-0001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012290812
NSN
5962-01-229-0812
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
MICROCIRCUIT,DIGITAL