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5962-01-233-9463

20 Products

MM54HC109J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339463

NSN

5962-01-233-9463

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MM54HC109J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339463

NSN

5962-01-233-9463

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K
FEATURES PROVIDED: MONOLITHIC AND ELECTROSTATIC SENSITIVE AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

6406313-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339463

NSN

5962-01-233-9463

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6406313-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339463

NSN

5962-01-233-9463

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K
FEATURES PROVIDED: MONOLITHIC AND ELECTROSTATIC SENSITIVE AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

MC74HC109N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339463

NSN

5962-01-233-9463

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MC74HC109N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339463

NSN

5962-01-233-9463

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K
FEATURES PROVIDED: MONOLITHIC AND ELECTROSTATIC SENSITIVE AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

DMS 90118B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339466

NSN

5962-01-233-9466

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DMS 90118B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339466

NSN

5962-01-233-9466

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 2.020 INCHES MAXIMUM
BODY WIDTH: 0.590 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 RECEIVER, ASYNCHRONOUS AND 1 TRANSMITTER
FEATURES PROVIDED: HERMETICALLY SEALED AND ASYNCHRONOUS AND LOW POWER AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 10.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

IM6403IJL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339466

NSN

5962-01-233-9466

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IM6403IJL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339466

NSN

5962-01-233-9466

MFG

INTERSIL INC SUB OF GENERAL ELECTRIC CO

Description

BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 2.020 INCHES MAXIMUM
BODY WIDTH: 0.590 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 RECEIVER, ASYNCHRONOUS AND 1 TRANSMITTER
FEATURES PROVIDED: HERMETICALLY SEALED AND ASYNCHRONOUS AND LOW POWER AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 10.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

6406332-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339467

NSN

5962-01-233-9467

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6406332-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339467

NSN

5962-01-233-9467

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.990 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 LATCH
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND W/ENABLE AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

CD54HCT373F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339467

NSN

5962-01-233-9467

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CD54HCT373F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339467

NSN

5962-01-233-9467

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.990 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 LATCH
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND W/ENABLE AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

MC54HCT373J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339467

NSN

5962-01-233-9467

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MC54HCT373J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339467

NSN

5962-01-233-9467

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.990 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 LATCH
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND W/ENABLE AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

CD54HCT139F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339468

NSN

5962-01-233-9468

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CD54HCT139F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339468

NSN

5962-01-233-9468

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.170 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.286 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DECODER, TWO TO FOUR LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/ENABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 53.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 53.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

932926-1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339469

NSN

5962-01-233-9469

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932926-1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339469

NSN

5962-01-233-9469

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND 3-STATE OUTPUT AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

CC6381

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339469

NSN

5962-01-233-9469

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CC6381

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339469

NSN

5962-01-233-9469

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND 3-STATE OUTPUT AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

DH15790

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339469

NSN

5962-01-233-9469

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DH15790

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339469

NSN

5962-01-233-9469

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND 3-STATE OUTPUT AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

R83128

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339469

NSN

5962-01-233-9469

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R83128

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339469

NSN

5962-01-233-9469

MFG

ROCHESTER ELECTRONICS LLC

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND 3-STATE OUTPUT AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SC77278LH1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339469

NSN

5962-01-233-9469

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SC77278LH1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339469

NSN

5962-01-233-9469

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND 3-STATE OUTPUT AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SL8T28E

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339469

NSN

5962-01-233-9469

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SL8T28E

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012339469

NSN

5962-01-233-9469

MFG

LANSDALE SEMICONDUCTOR INC .

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND 3-STATE OUTPUT AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

159405-0008

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012339472

NSN

5962-01-233-9472

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159405-0008

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012339472

NSN

5962-01-233-9472

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.187 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: STATIC OPERATION AND 3-STATE OUTPUT AND PROGRAMMABLE AND ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

159422-0008

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012339472

NSN

5962-01-233-9472

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159422-0008

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012339472

NSN

5962-01-233-9472

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.187 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: STATIC OPERATION AND 3-STATE OUTPUT AND PROGRAMMABLE AND ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

24634-0263

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012339472

NSN

5962-01-233-9472

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24634-0263

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012339472

NSN

5962-01-233-9472

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.187 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: STATIC OPERATION AND 3-STATE OUTPUT AND PROGRAMMABLE AND ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

D2732

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012339472

NSN

5962-01-233-9472

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D2732

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012339472

NSN

5962-01-233-9472

MFG

INTEL CORP SALES OFFICE

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.187 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: STATIC OPERATION AND 3-STATE OUTPUT AND PROGRAMMABLE AND ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012339472

NSN

5962-01-233-9472

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012339472

NSN

5962-01-233-9472

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.187 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: STATIC OPERATION AND 3-STATE OUTPUT AND PROGRAMMABLE AND ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE