My Quote Request
5962-01-236-2809
20 Products
MM74HC10N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012362809
NSN
5962-01-236-2809
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
BL5713159
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012362810
NSN
5962-01-236-2810
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
I15-0000-086
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012362810
NSN
5962-01-236-2810
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
MM74HC86N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012362810
NSN
5962-01-236-2810
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
42628-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363216
NSN
5962-01-236-3216
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: 3-STATE OUTPUT AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722912-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363216
NSN
5962-01-236-3216
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: 3-STATE OUTPUT AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722912-6
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363216
NSN
5962-01-236-3216
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: 3-STATE OUTPUT AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
93446DMQC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363216
NSN
5962-01-236-3216
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: 3-STATE OUTPUT AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363216
NSN
5962-01-236-3216
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363216
NSN
5962-01-236-3216
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: 3-STATE OUTPUT AND MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
63105
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363217
NSN
5962-01-236-3217
MFG
DATA DEVICE CORPORATION
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 1.400 INCHES MAXIMUM
BODY WIDTH: 0.805 INCHES MAXIMUM
FEATURES PROVIDED: HYBRID AND W/RESISTOR AND HERMETICALLY SEALED AND BURN IN AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.7 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
971837-2021
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363217
NSN
5962-01-236-3217
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 1.400 INCHES MAXIMUM
BODY WIDTH: 0.805 INCHES MAXIMUM
FEATURES PROVIDED: HYBRID AND W/RESISTOR AND HERMETICALLY SEALED AND BURN IN AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.7 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CT 1487
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363217
NSN
5962-01-236-3217
MFG
MARCONI CIRCUIT TECHNOLOGY CORP MICROELECTRONICS DIV
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 1.400 INCHES MAXIMUM
BODY WIDTH: 0.805 INCHES MAXIMUM
FEATURES PROVIDED: HYBRID AND W/RESISTOR AND HERMETICALLY SEALED AND BURN IN AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.7 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
974203-0421
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363218
NSN
5962-01-236-3218
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 16
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER
FEATURES PROVIDED: 3-STATE OUTPUT AND LOW POWER AND SCHOTTKY AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 440.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SNJ54LS673J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363218
NSN
5962-01-236-3218
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 16
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER
FEATURES PROVIDED: 3-STATE OUTPUT AND LOW POWER AND SCHOTTKY AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 440.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
53S1681JS883B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363219
NSN
5962-01-236-3219
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: SCHOTTKY AND BIPOLAR AND 3-STATE OUTPUT AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
971845-0221
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363219
NSN
5962-01-236-3219
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: SCHOTTKY AND BIPOLAR AND 3-STATE OUTPUT AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AM27S291DMB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363219
NSN
5962-01-236-3219
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: SCHOTTKY AND BIPOLAR AND 3-STATE OUTPUT AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012363219
NSN
5962-01-236-3219
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: SCHOTTKY AND BIPOLAR AND 3-STATE OUTPUT AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4041413.602
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363221
NSN
5962-01-236-3221
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: SCHOTTKY AND PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND 3-STATE OUTPUT AND HIGH IMPEDANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: CRITICAL IN THE APPLICABLE AIRWORTHINESS ANALYSIS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
8501829-105
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012363221
NSN
5962-01-236-3221
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: SCHOTTKY AND PROGRAMMABLE AND BIPOLAR AND MONOLITHIC AND 3-STATE OUTPUT AND HIGH IMPEDANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: CRITICAL IN THE APPLICABLE AIRWORTHINESS ANALYSIS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT