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5962-01-239-9749

20 Products

UPD4164C-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399749

NSN

5962-01-239-9749

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UPD4164C-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399749

NSN

5962-01-239-9749

MFG

NIPPON ELECTRIC COMPANY LTD

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 4.6 MILLIMETERS NOMINAL
BODY LENGTH: 19.2 MILLIMETERS NOMINAL
BODY WIDTH: 6.3 MILLIMETERS NOMINAL
FEATURES PROVIDED: HIGH PERFORMANCE AND W/STROBE AND DYNAMIC
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963), LOS ANGELES CLASS SSN (688), EMORY S. LAND CLASS AS. B-1 AIRCRAFT SUPPORT EQUIPMENT. GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT.(GPETE).
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

N82S115

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399574

NSN

5962-01-239-9574

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N82S115

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399574

NSN

5962-01-239-9574

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.120 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 332959-1
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 80249
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: SINE EIGHT LSB
THE MANUFACTURERS DATA:

ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399574

NSN

5962-01-239-9574

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ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399574

NSN

5962-01-239-9574

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.120 INCHES MAXIMUM
BODY LENGTH: 1.230 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 332959-1
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND SCHOTTKY AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 80249
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: SINE EIGHT LSB
THE MANUFACTURERS DATA:

51065-0025

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399675

NSN

5962-01-239-9675

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51065-0025

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399675

NSN

5962-01-239-9675

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399675

NSN

5962-01-239-9675

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ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399675

NSN

5962-01-239-9675

MFG

DLA LAND AND MARITIME

2072710

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399676

NSN

5962-01-239-9676

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2072710

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399676

NSN

5962-01-239-9676

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.190 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.2 VOLTS MAXIMUM POWER SOURCE

51096-0002

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399676

NSN

5962-01-239-9676

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51096-0002

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399676

NSN

5962-01-239-9676

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.190 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.2 VOLTS MAXIMUM POWER SOURCE

51096-0231

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399676

NSN

5962-01-239-9676

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51096-0231

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399676

NSN

5962-01-239-9676

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.190 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.2 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399676

NSN

5962-01-239-9676

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399676

NSN

5962-01-239-9676

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.190 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.2 VOLTS MAXIMUM POWER SOURCE

TMS2532JL

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399676

NSN

5962-01-239-9676

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TMS2532JL

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399676

NSN

5962-01-239-9676

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 32768
(NON-CORE DATA) WORD QUANTITY: 4096
BODY HEIGHT: 0.190 INCHES MAXIMUM
BODY LENGTH: 1.285 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.2 VOLTS MAXIMUM POWER SOURCE

1064610-126A

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399677

NSN

5962-01-239-9677

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1064610-126A

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399677

NSN

5962-01-239-9677

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
BODY LENGTH: 0.760 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND W/ENABLE AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

G308250-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399677

NSN

5962-01-239-9677

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G308250-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399677

NSN

5962-01-239-9677

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
BODY LENGTH: 0.760 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND W/ENABLE AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

HM1-7603-8

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399677

NSN

5962-01-239-9677

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HM1-7603-8

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399677

NSN

5962-01-239-9677

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
BODY LENGTH: 0.760 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND W/ENABLE AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

MM5331-1J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399677

NSN

5962-01-239-9677

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MM5331-1J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399677

NSN

5962-01-239-9677

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
BODY LENGTH: 0.760 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND W/ENABLE AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399677

NSN

5962-01-239-9677

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ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399677

NSN

5962-01-239-9677

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
BODY LENGTH: 0.760 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND W/ENABLE AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

01-2567

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399748

NSN

5962-01-239-9748

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01-2567

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399748

NSN

5962-01-239-9748

MFG

MARCONI CIRCUIT TECHNOLOGY CORP MICROELECTRONICS DIV

Description

BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 2.107 INCHES MAXIMUM
BODY WIDTH: 0.626 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ENCODER
FEATURES PROVIDED: MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
OPERATING TEMP RANGE: -54.0 TO 55.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -57.0 TO 85.0 DEG CELSIUS

16001630

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399748

NSN

5962-01-239-9748

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16001630

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399748

NSN

5962-01-239-9748

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 2.107 INCHES MAXIMUM
BODY WIDTH: 0.626 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ENCODER
FEATURES PROVIDED: MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
OPERATING TEMP RANGE: -54.0 TO 55.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -57.0 TO 85.0 DEG CELSIUS

CT10895D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399748

NSN

5962-01-239-9748

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CT10895D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012399748

NSN

5962-01-239-9748

MFG

MARCONI CIRCUIT TECHNOLOGY CORP MICROELECTRONICS DIV

Description

BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 2.107 INCHES MAXIMUM
BODY WIDTH: 0.626 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ENCODER
FEATURES PROVIDED: MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
OPERATING TEMP RANGE: -54.0 TO 55.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -57.0 TO 85.0 DEG CELSIUS

1818-3006

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399749

NSN

5962-01-239-9749

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1818-3006

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399749

NSN

5962-01-239-9749

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 4.6 MILLIMETERS NOMINAL
BODY LENGTH: 19.2 MILLIMETERS NOMINAL
BODY WIDTH: 6.3 MILLIMETERS NOMINAL
FEATURES PROVIDED: HIGH PERFORMANCE AND W/STROBE AND DYNAMIC
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963), LOS ANGELES CLASS SSN (688), EMORY S. LAND CLASS AS. B-1 AIRCRAFT SUPPORT EQUIPMENT. GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT.(GPETE).
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

HM4864P-3

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399749

NSN

5962-01-239-9749

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HM4864P-3

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012399749

NSN

5962-01-239-9749

MFG

HITACHI AMERICA LTD. DIV POWER SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 4.6 MILLIMETERS NOMINAL
BODY LENGTH: 19.2 MILLIMETERS NOMINAL
BODY WIDTH: 6.3 MILLIMETERS NOMINAL
FEATURES PROVIDED: HIGH PERFORMANCE AND W/STROBE AND DYNAMIC
III END ITEM IDENTIFICATION: SPRUANCE CLASS DD (963), LOS ANGELES CLASS SSN (688), EMORY S. LAND CLASS AS. B-1 AIRCRAFT SUPPORT EQUIPMENT. GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT.(GPETE).
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE