My Quote Request
5962-01-241-8099
20 Products
S161-00305
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
NSN
5962-01-241-8099
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRUMMAN SYSTEMS
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
93L422/BWAJC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
NSN
5962-01-241-8099
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
NSN
5962-01-241-8099
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AM93L422DMB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
NSN
5962-01-241-8099
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AM93L422DMQB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
NSN
5962-01-241-8099
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
NSN
5962-01-241-8099
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
NSN
5962-01-241-8099
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
NSN
5962-01-241-8099
MFG
SARNOFF CORPORATION
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
JAN-M38510/23112BWX
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
NSN
5962-01-241-8099
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
NSN
5962-01-241-8099
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/23112BWA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
NSN
5962-01-241-8099
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/23112BWB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
NSN
5962-01-241-8099
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/23112BWC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
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5962-01-241-8099
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012418099
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5962-01-241-8099
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-7 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/23112BWA
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 935.0 MILLIWATTS
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/231
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/231 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.130 INCHES MAXIMUM
BODY LENGTH: 1.035 INCHES MAXIMUM
BODY WIDTH: 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, SENSE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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5962-01-241-8101
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RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.130 INCHES MAXIMUM
BODY LENGTH: 1.035 INCHES MAXIMUM
BODY WIDTH: 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, SENSE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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Description
BODY HEIGHT: 0.130 INCHES MAXIMUM
BODY LENGTH: 1.035 INCHES MAXIMUM
BODY WIDTH: 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, SENSE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
D7242
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012418101
NSN
5962-01-241-8101
MFG
INTEL CORP SALES OFFICE
Description
BODY HEIGHT: 0.130 INCHES MAXIMUM
BODY LENGTH: 1.035 INCHES MAXIMUM
BODY WIDTH: 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, SENSE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1820-2816
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012418102
NSN
5962-01-241-8102
MFG
HEWLETT PACKARD CO
Description
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, MEMORY
FEATURES PROVIDED: LOW POWER AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -20.0 TO 80.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 14.0 VOLTS MAXIMUM POWER SOURCE