My Quote Request
5962-01-257-9871
20 Products
AD7531KN
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012579871
NSN
5962-01-257-9871
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.890 INCHES MINIMUM AND 0.910 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.294 INCHES MINIMUM AND 0.306 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC AND DIODE-TRANSISTOR LOGIC
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ROM/PROM HEAD 108
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012578346
NSN
5962-01-257-8346
ROM/PROM HEAD 108
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012578346
NSN
5962-01-257-8346
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.120 INCHES MAXIMUM
BODY LENGTH: 0.550 INCHES MAXIMUM
BODY WIDTH: 0.450 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND 3-STATE OUTPUT AND PROGRAMMABLE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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LT1028ACJ8
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012578389
NSN
5962-01-257-8389
MFG
GENNUM CORP A LINEAR TECHNOLOGY INC CO
Description
MICROCIRCUIT,LINEAR
Related Searches:
9109FMQB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012578878
NSN
5962-01-257-8878
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.065 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: METAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
Related Searches:
AM27S13A/BEA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012578879
NSN
5962-01-257-8879
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: MEDIUM POWER AND HIGH RELIABILITY AND PROGRAMMABLE AND BIPOLAR AND LOW CURRENT AND 3-STATE OUTPUT AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
Related Searches:
AM27S13ADM
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012578879
NSN
5962-01-257-8879
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: MEDIUM POWER AND HIGH RELIABILITY AND PROGRAMMABLE AND BIPOLAR AND LOW CURRENT AND 3-STATE OUTPUT AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
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ROM/PROM
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012578879
NSN
5962-01-257-8879
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
FEATURES PROVIDED: MEDIUM POWER AND HIGH RELIABILITY AND PROGRAMMABLE AND BIPOLAR AND LOW CURRENT AND 3-STATE OUTPUT AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
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6134834-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012579636
NSN
5962-01-257-9636
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.970 INCHES NOMINAL
BODY WIDTH: 0.500 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HYBRID AND HERMETICALLY SEALED AND BURN IN
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 03640-6134834-1 DRAWING
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -18.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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CH1384
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012579636
NSN
5962-01-257-9636
MFG
CRYSTALONICS INC.
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.970 INCHES NOMINAL
BODY WIDTH: 0.500 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HYBRID AND HERMETICALLY SEALED AND BURN IN
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 03640-6134834-1 DRAWING
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -18.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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AD382KH
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012579637
NSN
5962-01-257-9637
MFG
ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS
Description
BODY HEIGHT: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-8 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND LOW DRIFT AND HIGH SLEW RATE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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1600DMQB70
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012579638
NSN
5962-01-257-9638
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
6135848-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012579638
NSN
5962-01-257-9638
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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IDT7187S70CB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012579638
NSN
5962-01-257-9638
MFG
INTEGRATED DEVICE TECHNOLOGY INC
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
IMS1600S-70M
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012579638
NSN
5962-01-257-9638
MFG
SGS-THOMSON MICROELECTRONICS INC
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
6135093-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012579639
NSN
5962-01-257-9639
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
BODY HEIGHT: 0.127 INCHES NOMINAL
BODY LENGTH: 1.860 INCHES NOMINAL
BODY WIDTH: 1.260 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND W/ENABLE AND ELECTROSTATIC SENSITIVE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: COVER SURFACES GOLD
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR METAL
MAXIMUM POWER DISSIPATION RATING: 8.6 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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S2559E
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012579641
NSN
5962-01-257-9641
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC POCATELLO ID MANUFACTURING FACILITY DBA ON SEMICONDUCTOR
Description
BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.230 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR
FEATURES PROVIDED: LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 1000.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -30.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 10.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
S2559EP
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012579641
NSN
5962-01-257-9641
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC POCATELLO ID MANUFACTURING FACILITY DBA ON SEMICONDUCTOR
Description
BODY HEIGHT: 0.110 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.230 INCHES MINIMUM AND 0.270 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR
FEATURES PROVIDED: LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 1000.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -30.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 10.5 VOLTS MAXIMUM POWER SOURCE
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HSD1112-341P
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962012579642
NSN
5962-01-257-9642
HSD1112-341P
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962012579642
NSN
5962-01-257-9642
MFG
NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 12
BODY HEIGHT: 0.260 INCHES NOMINAL
BODY LENGTH: 1.740 INCHES NOMINAL
BODY WIDTH: 1.140 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, SYNCHRO TO DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND HIGH SPEED AND W/ENABLE AND HYBRID AND W/INHIBIT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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SDC1741-411
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962012579642
NSN
5962-01-257-9642
SDC1741-411
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962012579642
NSN
5962-01-257-9642
MFG
ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS
Description
(NON-CORE DATA) BIT QUANTITY: 12
BODY HEIGHT: 0.260 INCHES NOMINAL
BODY LENGTH: 1.740 INCHES NOMINAL
BODY WIDTH: 1.140 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, SYNCHRO TO DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND HIGH SPEED AND W/ENABLE AND HYBRID AND W/INHIBIT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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51-P16377A021
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012579870
NSN
5962-01-257-9870
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, RADIO FREQUENCY
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS