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5962-01-264-4464

20 Products

MC74F153ND

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

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MC74F153ND

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33902BEA
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND 3-STATE OUTPUT AND BIPOLAR AND MONOLITHIC
III END ITEM IDENTIFICATION: 5805-01-241-9710 CENTRAL OFFICE,TELE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/339
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/339 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

54F153DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

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54F153DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33902BEA
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND 3-STATE OUTPUT AND BIPOLAR AND MONOLITHIC
III END ITEM IDENTIFICATION: 5805-01-241-9710 CENTRAL OFFICE,TELE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/339
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/339 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

63A140388P412-4

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

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63A140388P412-4

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33902BEA
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND 3-STATE OUTPUT AND BIPOLAR AND MONOLITHIC
III END ITEM IDENTIFICATION: 5805-01-241-9710 CENTRAL OFFICE,TELE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/339
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/339 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

6405514-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

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6405514-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33902BEA
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND 3-STATE OUTPUT AND BIPOLAR AND MONOLITHIC
III END ITEM IDENTIFICATION: 5805-01-241-9710 CENTRAL OFFICE,TELE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/339
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/339 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

74F153PCQR

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

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74F153PCQR

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33902BEA
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND 3-STATE OUTPUT AND BIPOLAR AND MONOLITHIC
III END ITEM IDENTIFICATION: 5805-01-241-9710 CENTRAL OFFICE,TELE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/339
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/339 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

7908648-05

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

View More Info

7908648-05

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33902BEA
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND 3-STATE OUTPUT AND BIPOLAR AND MONOLITHIC
III END ITEM IDENTIFICATION: 5805-01-241-9710 CENTRAL OFFICE,TELE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/339
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/339 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/33902BEA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

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M38510/33902BEA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33902BEA
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND 3-STATE OUTPUT AND BIPOLAR AND MONOLITHIC
III END ITEM IDENTIFICATION: 5805-01-241-9710 CENTRAL OFFICE,TELE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/339
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/339 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/33902BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

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M38510/33902BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644464

NSN

5962-01-264-4464

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33902BEA
DESIGN FUNCTION AND QUANTITY: 2 SELECTOR, DATA, MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND 3-STATE OUTPUT AND BIPOLAR AND MONOLITHIC
III END ITEM IDENTIFICATION: 5805-01-241-9710 CENTRAL OFFICE,TELE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/339
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/339 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

7100582-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012644465

NSN

5962-01-264-4465

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7100582-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012644465

NSN

5962-01-264-4465

MFG

ELECTRODYNAMICS INC. DBA L-3 COMMUNICATIONS ELECTRODYNAMICS

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.560 INCHES MAXIMUM
BODY WIDTH: 0.450 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE AND W/BUFFERED OUTPUT AND BIDIRECTIONAL
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 24 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012644465

NSN

5962-01-264-4465

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012644465

NSN

5962-01-264-4465

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.560 INCHES MAXIMUM
BODY WIDTH: 0.450 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE AND W/BUFFERED OUTPUT AND BIDIRECTIONAL
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 24 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE

X2864AEMB-45

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012644465

NSN

5962-01-264-4465

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X2864AEMB-45

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012644465

NSN

5962-01-264-4465

MFG

XICOR INC

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.560 INCHES MAXIMUM
BODY WIDTH: 0.450 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND ERASABLE AND W/BUFFERED OUTPUT AND BIDIRECTIONAL
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 24 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE

AD7507TD/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644466

NSN

5962-01-264-4466

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AD7507TD/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644466

NSN

5962-01-264-4466

MFG

ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS

Description

BODY HEIGHT: 0.175 INCHES NOMINAL
BODY LENGTH: 1.440 INCHES MINIMUM AND 1.460 INCHES MAXIMUM
BODY WIDTH: 0.520 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 2 MULTIPLEXER
FEATURES PROVIDED: W/ENABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1000.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE

DG507AAR/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644466

NSN

5962-01-264-4466

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DG507AAR/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644466

NSN

5962-01-264-4466

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

BODY HEIGHT: 0.175 INCHES NOMINAL
BODY LENGTH: 1.440 INCHES MINIMUM AND 1.460 INCHES MAXIMUM
BODY WIDTH: 0.520 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 2 MULTIPLEXER
FEATURES PROVIDED: W/ENABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1000.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE

IH6216MJI/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644466

NSN

5962-01-264-4466

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IH6216MJI/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644466

NSN

5962-01-264-4466

MFG

INTERSIL INC SUB OF GENERAL ELECTRIC CO

Description

BODY HEIGHT: 0.175 INCHES NOMINAL
BODY LENGTH: 1.440 INCHES MINIMUM AND 1.460 INCHES MAXIMUM
BODY WIDTH: 0.520 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 2 MULTIPLEXER
FEATURES PROVIDED: W/ENABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1000.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE

KRY1918AU

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644466

NSN

5962-01-264-4466

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KRY1918AU

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644466

NSN

5962-01-264-4466

MFG

EATON AEROSPACE LLC DIV ELECTRICAL SENSING & CONTROLS

Description

BODY HEIGHT: 0.175 INCHES NOMINAL
BODY LENGTH: 1.440 INCHES MINIMUM AND 1.460 INCHES MAXIMUM
BODY WIDTH: 0.520 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 2 MULTIPLEXER
FEATURES PROVIDED: W/ENABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1000.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 17.0 VOLTS MAXIMUM POWER SOURCE

SN74ALS257N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644468

NSN

5962-01-264-4468

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SN74ALS257N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644468

NSN

5962-01-264-4468

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 SELECTOR, DATA, MULTIPLEXER, TWO TO ONE LINE
FEATURES PROVIDED: 3-STATE OUTPUT AND LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SN74ALS640AN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644469

NSN

5962-01-264-4469

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SN74ALS640AN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644469

NSN

5962-01-264-4469

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.975 INCHES MAXIMUM
BODY WIDTH: 0.270 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 8 TRANSCEIVER
FEATURES PROVIDED: 3-STATE OUTPUT AND BIDIRECTIONAL AND ASYNCHRONOUS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 18 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SN74ALS640BN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644469

NSN

5962-01-264-4469

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SN74ALS640BN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012644469

NSN

5962-01-264-4469

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.975 INCHES MAXIMUM
BODY WIDTH: 0.270 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 8 TRANSCEIVER
FEATURES PROVIDED: 3-STATE OUTPUT AND BIDIRECTIONAL AND ASYNCHRONOUS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 18 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 11.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

H990719-001B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012644470

NSN

5962-01-264-4470

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H990719-001B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012644470

NSN

5962-01-264-4470

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 12
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.977 INCHES MINIMUM AND 1.027 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC
III END ITEM IDENTIFICATION: 1440-01-215-4868 ARMAMENT SUBSYS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 120.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

MN370H/883B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012644470

NSN

5962-01-264-4470

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MN370H/883B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012644470

NSN

5962-01-264-4470

MFG

SPECTRUM MICROWAVE INC. DBA MICRO NETWORKS DIV SPECTRUM MICROWAVE WORCESTER

Description

(NON-CORE DATA) BIT QUANTITY: 12
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 0.977 INCHES MINIMUM AND 1.027 INCHES MAXIMUM
BODY WIDTH: 0.480 INCHES MINIMUM AND 0.520 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC
III END ITEM IDENTIFICATION: 1440-01-215-4868 ARMAMENT SUBSYS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 120.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE