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5962-01-270-2175

20 Products

SE564IB

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012702175

NSN

5962-01-270-2175

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SE564IB

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012702175

NSN

5962-01-270-2175

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PHASE LOCKED LOOP
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 14.0 VOLTS MAXIMUM POWER SOURCE

5003684

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

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5003684

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

MFG

DEPT OF THE ARMY U S ARMY ELECTRONICS COMMAND NIGHT VISION LABORATORY

Description

BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
BODY WIDTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33001B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/330
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/330 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

54F00L1MQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

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54F00L1MQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
BODY WIDTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33001B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/330
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/330 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

54F00LMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

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54F00LMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

MFG

BRATU ENGINEERING CO

Description

BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
BODY WIDTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33001B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/330
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/330 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

7907523-46

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

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7907523-46

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

Description

BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
BODY WIDTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33001B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/330
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/330 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

G101950-821

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

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G101950-821

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
BODY WIDTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33001B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/330
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/330 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/33001B2A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

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M38510/33001B2A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
BODY WIDTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33001B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/330
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/330 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/33001B2B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

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M38510/33001B2B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
BODY WIDTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33001B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/330
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/330 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/33001B2C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

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M38510/33001B2C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
BODY WIDTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33001B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/330
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/330 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/33001B2X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

View More Info

M38510/33001B2X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701948

NSN

5962-01-270-1948

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
BODY WIDTH: 0.342 INCHES MINIMUM AND 0.358 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33001B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 56.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/330
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/330 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

717801050-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012701949

NSN

5962-01-270-1949

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717801050-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012701949

NSN

5962-01-270-1949

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN

Description

(NON-CORE DATA) BIT QUANTITY: 25536
(NON-CORE DATA) WORD QUANTITY: 3192
BODY HEIGHT: 0.120 INCHES MAXIMUM
BODY LENGTH: 0.550 INCHES MAXIMUM
BODY WIDTH: 0.450 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-12 MIL-M-38510
FEATURES PROVIDED: ERASABLE AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 21 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

AT28HC64-12LM/883

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012701949

NSN

5962-01-270-1949

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AT28HC64-12LM/883

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012701949

NSN

5962-01-270-1949

MFG

ATMEL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 25536
(NON-CORE DATA) WORD QUANTITY: 3192
BODY HEIGHT: 0.120 INCHES MAXIMUM
BODY LENGTH: 0.550 INCHES MAXIMUM
BODY WIDTH: 0.450 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-12 MIL-M-38510
FEATURES PROVIDED: ERASABLE AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 21 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

AT28HC64-12LMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012701949

NSN

5962-01-270-1949

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AT28HC64-12LMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012701949

NSN

5962-01-270-1949

MFG

ATMEL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 25536
(NON-CORE DATA) WORD QUANTITY: 3192
BODY HEIGHT: 0.120 INCHES MAXIMUM
BODY LENGTH: 0.550 INCHES MAXIMUM
BODY WIDTH: 0.450 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-12 MIL-M-38510
FEATURES PROVIDED: ERASABLE AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 21 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012701949

NSN

5962-01-270-1949

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012701949

NSN

5962-01-270-1949

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 25536
(NON-CORE DATA) WORD QUANTITY: 3192
BODY HEIGHT: 0.120 INCHES MAXIMUM
BODY LENGTH: 0.550 INCHES MAXIMUM
BODY WIDTH: 0.450 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-12 MIL-M-38510
FEATURES PROVIDED: ERASABLE AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 21 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

156-0502-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701954

NSN

5962-01-270-1954

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156-0502-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701954

NSN

5962-01-270-1954

MFG

TEKTRONIX INC. DBA TEKTRONIX

156-0502-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701954

NSN

5962-01-270-1954

View More Info

156-0502-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701954

NSN

5962-01-270-1954

MFG

TEKTRONIX INC. DBA TEKTRONIX

CD4008BF

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701954

NSN

5962-01-270-1954

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CD4008BF

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701954

NSN

5962-01-270-1954

MFG

INTERSIL CORPORATION

MC14008BCLD

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701954

NSN

5962-01-270-1954

View More Info

MC14008BCLD

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012701954

NSN

5962-01-270-1954

MFG

FREESCALE SEMICONDUCTOR INC.

SC-110-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012702053

NSN

5962-01-270-2053

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SC-110-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012702053

NSN

5962-01-270-2053

MFG

DATA DEVICE CORPORATION

C5118415

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012702175

NSN

5962-01-270-2175

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C5118415

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012702175

NSN

5962-01-270-2175

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 PHASE LOCKED LOOP
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 14.0 VOLTS MAXIMUM POWER SOURCE