My Quote Request
5962-01-281-6237
20 Products
ROM/PROM FAMILY 252
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816237
NSN
5962-01-281-6237
ROM/PROM FAMILY 252
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816237
NSN
5962-01-281-6237
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-6 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: LOW BIAS AND W/CLOCK AND PROGRAMMED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: REGISTERED AND-OR GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
8412902KA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816237
NSN
5962-01-281-6237
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-6 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: LOW BIAS AND W/CLOCK AND PROGRAMMED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: REGISTERED AND-OR GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
H990313-001B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816237
NSN
5962-01-281-6237
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-6 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 210.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: LOW BIAS AND W/CLOCK AND PROGRAMMED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: REGISTERED AND-OR GATE ARRAY
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
13294520
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012816256
NSN
5962-01-281-6256
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
MICROCIRCUIT,DIGITAL
Related Searches:
8200503YX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012816256
NSN
5962-01-281-6256
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,DIGITAL
Related Searches:
616483
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816642
NSN
5962-01-281-6642
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
646116-902
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816642
NSN
5962-01-281-6642
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M2716
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816642
NSN
5962-01-281-6642
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MKB2716T-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816642
NSN
5962-01-281-6642
MFG
STMICROELECTRONICS INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816642
NSN
5962-01-281-6642
ROM/PROM FAMILY 020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816642
NSN
5962-01-281-6642
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
616483
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816643
NSN
5962-01-281-6643
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
646117-902
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816643
NSN
5962-01-281-6643
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M2716
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816643
NSN
5962-01-281-6643
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MKB2716T-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816643
NSN
5962-01-281-6643
MFG
STMICROELECTRONICS INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816643
NSN
5962-01-281-6643
ROM/PROM FAMILY 020
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816643
NSN
5962-01-281-6643
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
616483
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816644
NSN
5962-01-281-6644
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
646118-902
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816644
NSN
5962-01-281-6644
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M2716
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816644
NSN
5962-01-281-6644
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MKB2716T-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012816644
NSN
5962-01-281-6644
MFG
STMICROELECTRONICS INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
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DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM
BODY WIDTH: 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE