My Quote Request
5962-01-281-7522
20 Products
M38510/33501B2X
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817522
NSN
5962-01-281-7522
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33501B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 85.3 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/335 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
54F32LMQB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817522
NSN
5962-01-281-7522
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33501B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 85.3 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/335 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
54F32M/B2CJC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817522
NSN
5962-01-281-7522
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33501B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 85.3 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/335 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
54F32M/B2JC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817522
NSN
5962-01-281-7522
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33501B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 85.3 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/335 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817522
NSN
5962-01-281-7522
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
BODY HEIGHT: 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33501B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 85.3 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/335 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
7908282-46
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817522
NSN
5962-01-281-7522
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
BODY HEIGHT: 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33501B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 85.3 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/335 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817522
NSN
5962-01-281-7522
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33501B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 85.3 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/335 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817522
NSN
5962-01-281-7522
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33501B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 85.3 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/335 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/33501B2A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817522
NSN
5962-01-281-7522
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33501B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 85.3 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/335 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/33501B2B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817522
NSN
5962-01-281-7522
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.100 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/33501B2A
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 85.3 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/335
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/335 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817523
NSN
5962-01-281-7523
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 1.400 INCHES MAXIMUM
BODY WIDTH: 0.805 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TRANSCEIVER
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND HYBRID AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 4.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817523
NSN
5962-01-281-7523
MFG
DATA DEVICE CORPORATION
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 1.400 INCHES MAXIMUM
BODY WIDTH: 0.805 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TRANSCEIVER
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND HYBRID AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 4.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012817523
NSN
5962-01-281-7523
MFG
DATA DEVICE CORPORATION
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 1.400 INCHES MAXIMUM
BODY WIDTH: 0.805 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TRANSCEIVER
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND HYBRID AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 4.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962012817523
NSN
5962-01-281-7523
MFG
DATA DEVICE CORPORATION
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 1.400 INCHES MAXIMUM
BODY WIDTH: 0.805 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TRANSCEIVER
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND HYBRID AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 4.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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NSN
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MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
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NSN, MFG P/N
5962012817729
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5962-01-281-7729
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.224 INCHES MINIMUM AND 0.234 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.399 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
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5962012817729
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NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.224 INCHES MINIMUM AND 0.234 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.399 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
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NSN, MFG P/N
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RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.345 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.760 INCHES MINIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, POWER
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.345 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.760 INCHES MINIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, POWER
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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TOSHIBA INTERNATIONAL CORPORATION DBA TOSHIBA INTERNATIONAL
Description
DESIGN FUNCTION AND QUANTITY: 4 LATCH, D
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC