My Quote Request
5962-01-284-2777
20 Products
UMF923
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012842777
NSN
5962-01-284-2777
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
BODY HEIGHT: 0.280 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, BUFFER
FEATURES PROVIDED: HYBRID AND THICK FILM AND W/RESISTOR
III OVERALL HEIGHT: 0.580 INCHES NOMINAL
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
923
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012842777
NSN
5962-01-284-2777
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
BODY HEIGHT: 0.280 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, BUFFER
FEATURES PROVIDED: HYBRID AND THICK FILM AND W/RESISTOR
III OVERALL HEIGHT: 0.580 INCHES NOMINAL
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ARX 1507
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012842777
NSN
5962-01-284-2777
MFG
AEROFLEX LABORATORIES INC HYBRID DIV
Description
BODY HEIGHT: 0.280 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, BUFFER
FEATURES PROVIDED: HYBRID AND THICK FILM AND W/RESISTOR
III OVERALL HEIGHT: 0.580 INCHES NOMINAL
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -40.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1301-2
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012842912
NSN
5962-01-284-2912
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 1.290 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DETECTOR, LOW FREQUENCY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND HYBRID
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 34 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5757301-2
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012842912
NSN
5962-01-284-2912
MFG
NAVAL SEA SYSTEMS COMMAND
Description
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 1.290 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DETECTOR, LOW FREQUENCY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND HYBRID
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 34 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
418244
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012842914
NSN
5962-01-284-2914
MFG
FLUKE CORPORATION
Description
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
Related Searches:
1206060-007
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012842915
NSN
5962-01-284-2915
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1206060-7
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012842915
NSN
5962-01-284-2915
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5757242-7
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012842915
NSN
5962-01-284-2915
MFG
NAVAL SEA SYSTEMS COMMAND
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/20602BVA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012842915
NSN
5962-01-284-2915
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012842915
NSN
5962-01-284-2915
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1206060-008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012842916
NSN
5962-01-284-2916
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1206060-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012842916
NSN
5962-01-284-2916
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5757242-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012842916
NSN
5962-01-284-2916
MFG
NAVAL SEA SYSTEMS COMMAND
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/20602BVA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012842916
NSN
5962-01-284-2916
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012842916
NSN
5962-01-284-2916
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CD54HCT75F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012842917
NSN
5962-01-284-2917
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 LATCH, BISTABLE
FEATURES PROVIDED: HIGH SPEED AND W/ENABLE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -66.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CD54HCT75F/3A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012842917
NSN
5962-01-284-2917
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 LATCH, BISTABLE
FEATURES PROVIDED: HIGH SPEED AND W/ENABLE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -66.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HS9576S/B
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962012842918
NSN
5962-01-284-2918
HS9576S/B
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962012842918
NSN
5962-01-284-2918
MFG
SATCON ELECTRONICS CUSTOM HYBRID PRODUCTS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 16
BODY HEIGHT: 0.225 INCHES MAXIMUM
BODY LENGTH: 1.750 INCHES MAXIMUM
BODY WIDTH: 1.005 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, ANALOG TO DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND BIPOLAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
2810773-1
STOP,BUFFER
NSN, MFG P/N
5962012843135
NSN
5962-01-284-3135
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
STOP,BUFFER