My Quote Request
5962-01-285-9153
20 Products
SD7724A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859153
NSN
5962-01-285-9153
MFG
NATIONAL SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02002BDA
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 8.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/02002BDX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859153
NSN
5962-01-285-9153
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02002BDA
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 8.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-3802003BDA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859154
NSN
5962-01-285-9154
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02003BDA
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-3802003BDB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859154
NSN
5962-01-285-9154
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02003BDA
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-3802003BDX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859154
NSN
5962-01-285-9154
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02003BDA
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/02003BDA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859154
NSN
5962-01-285-9154
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02003BDA
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/02003BDB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859154
NSN
5962-01-285-9154
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02003BDA
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/02003BDX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859154
NSN
5962-01-285-9154
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02003BDA
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SD7723A
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859154
NSN
5962-01-285-9154
MFG
NATIONAL SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02003BDA
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54L10R06
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859154
NSN
5962-01-285-9154
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02003BDA
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
307832-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859155
NSN
5962-01-285-9155
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02004BCA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
537AS486
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859155
NSN
5962-01-285-9155
MFG
NAVAL AIR SYSTEMS COMMAND
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02004BCA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
911608-4
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859155
NSN
5962-01-285-9155
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02004BCA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/020-04BC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859155
NSN
5962-01-285-9155
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02004BCA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/02004BCA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859155
NSN
5962-01-285-9155
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02004BCA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/02004BCB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859155
NSN
5962-01-285-9155
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02004BCA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/02004BCX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859155
NSN
5962-01-285-9155
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02004BCA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54L00J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859155
NSN
5962-01-285-9155
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02004BCA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54L00J-10
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859155
NSN
5962-01-285-9155
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02004BCA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/20
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1820-0594
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012859157
NSN
5962-01-285-9157
MFG
HEWLETT PACKARD CO
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/02102BCA
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, J-K, MASTER SLAVE
FEATURES PROVIDED: LOW POWER AND MONOLITHIC AND W/CLEAR AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 11.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/21
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/21 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE