My Quote Request
5962-01-291-0395
20 Products
743357-01
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012910395
NSN
5962-01-291-0395
MFG
GE AVIATION SYSTEMS LLC
Description
MICROCIRCUIT,LINEAR
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80321700000
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012909427
NSN
5962-01-290-9427
MFG
PLESSEY SPA
Description
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: LOW CURRENT AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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999/4/43079/131
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012909427
NSN
5962-01-290-9427
MFG
SELEX GALILEO LTD
Description
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: LOW CURRENT AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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NSN, MFG P/N
5962012909427
NSN
5962-01-290-9427
MFG
MICRO USPD INC
Description
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: LOW CURRENT AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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02-0370-12
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012909528
NSN
5962-01-290-9528
MFG
LUCAS AEROSPACE POWER EQUIPMENT CORPORATION
Description
BODY LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE
FEATURES PROVIDED: LOW POWER AND HIGH PRECISION AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
III OVERALL LENGTH: 0.665 INCHES MINIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012909528
NSN
5962-01-290-9528
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE
FEATURES PROVIDED: LOW POWER AND HIGH PRECISION AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
III OVERALL LENGTH: 0.665 INCHES MINIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 830.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE
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8007-41-3201
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012909529
NSN
5962-01-290-9529
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012909529
NSN
5962-01-290-9529
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
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156-0295-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012909530
NSN
5962-01-290-9530
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 GATE, EXCLUSIVE, OR/NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND W/RESISTOR
III OVERALL HEIGHT: 0.285 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 120.0 MILLIWATTS
OPERATING TEMP RANGE: -30.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012909530
NSN
5962-01-290-9530
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 GATE, EXCLUSIVE, OR/NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND W/RESISTOR
III OVERALL HEIGHT: 0.285 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 120.0 MILLIWATTS
OPERATING TEMP RANGE: -30.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
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10069392-101
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012909532
NSN
5962-01-290-9532
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
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10104656-110
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012909532
NSN
5962-01-290-9532
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
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5962-01-290-9532
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NSN, MFG P/N
5962012909532
NSN
5962-01-290-9532
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
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10069392-101
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012909534
NSN
5962-01-290-9534
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
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10104656-111
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012909534
NSN
5962-01-290-9534
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
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5962-01-290-9534
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NSN, MFG P/N
5962012909534
NSN
5962-01-290-9534
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.210 INCHES NOMINAL
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 26.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012909535
NSN
5962-01-290-9535
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND SCHOTTKY
III END ITEM IDENTIFICATION: 6625-01-224-6054
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1160.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012909535
NSN
5962-01-290-9535
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND SCHOTTKY
III END ITEM IDENTIFICATION: 6625-01-224-6054
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1160.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012909797
NSN
5962-01-290-9797
MFG
DEPARTMENT OF THE ARMY US ARMY AVIONICS RESEARCH AND DEVELOPMENT ACTIVITY
Description
MICROCIRCUIT,DIGITAL
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151596-03
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012910394
NSN
5962-01-291-0394
MFG
GE AVIATION SYSTEMS LLC
Description
MICROCIRCUIT,LINEAR

