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5962-01-293-7102

20 Products

SG1489J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937102

NSN

5962-01-293-7102

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SG1489J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937102

NSN

5962-01-293-7102

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

Description

DESIGN FUNCTION AND QUANTITY: 4 RECEIVER, LINE
FEATURES PROVIDED: MONOLITHIC AND BURN IN
III END ITEM IDENTIFICATION: ASR9, AIRPORT SURVEILLANCE RADAR
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

143503398

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012936609

NSN

5962-01-293-6609

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143503398

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012936609

NSN

5962-01-293-6609

MFG

EATON CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.205 INCHES MAXIMUM
BODY LENGTH: 1.300 INCHES MAXIMUM
BODY WIDTH: 0.520 INCHES MAXIMUM
FEATURES PROVIDED: LOW POWER AND HIGH SPEED AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 21 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

HM6116LP-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012936609

NSN

5962-01-293-6609

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HM6116LP-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012936609

NSN

5962-01-293-6609

MFG

HITACHI AMERICA LTD. DIV POWER SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.205 INCHES MAXIMUM
BODY LENGTH: 1.300 INCHES MAXIMUM
BODY WIDTH: 0.520 INCHES MAXIMUM
FEATURES PROVIDED: LOW POWER AND HIGH SPEED AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 21 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

MB8416A-12P

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012936609

NSN

5962-01-293-6609

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MB8416A-12P

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012936609

NSN

5962-01-293-6609

MFG

FUJITSU MICROELECTRONICS INC.

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.205 INCHES MAXIMUM
BODY LENGTH: 1.300 INCHES MAXIMUM
BODY WIDTH: 0.520 INCHES MAXIMUM
FEATURES PROVIDED: LOW POWER AND HIGH SPEED AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 21 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

PD446C-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012936609

NSN

5962-01-293-6609

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PD446C-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012936609

NSN

5962-01-293-6609

MFG

NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.205 INCHES MAXIMUM
BODY LENGTH: 1.300 INCHES MAXIMUM
BODY WIDTH: 0.520 INCHES MAXIMUM
FEATURES PROVIDED: LOW POWER AND HIGH SPEED AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 21 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

143503168

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012936610

NSN

5962-01-293-6610

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143503168

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012936610

NSN

5962-01-293-6610

MFG

EATON CORPORATION

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS AND MONOLITHIC AND BURN IN AND W/CLEAR AND RETRIGGERABLE AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

74LS123PCQR

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012936610

NSN

5962-01-293-6610

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74LS123PCQR

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012936610

NSN

5962-01-293-6610

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS AND MONOLITHIC AND BURN IN AND W/CLEAR AND RETRIGGERABLE AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

9360857-2

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012936611

NSN

5962-01-293-6611

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9360857-2

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012936611

NSN

5962-01-293-6611

MFG

U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND

Description

(NON-CORE DATA) BIT QUANTITY: 18
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 1.475 INCHES MAXIMUM
BODY WIDTH: 0.775 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HYBRID AND BIPOLAR
III END ITEM IDENTIFICATION: 1005-01-177-9237
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 23 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

DAC37721

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012936611

NSN

5962-01-293-6611

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DAC37721

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962012936611

NSN

5962-01-293-6611

MFG

SATCON ELECTRONICS CUSTOM HYBRID PRODUCTS DIV

Description

(NON-CORE DATA) BIT QUANTITY: 18
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 1.475 INCHES MAXIMUM
BODY WIDTH: 0.775 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HYBRID AND BIPOLAR
III END ITEM IDENTIFICATION: 1005-01-177-9237
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 23 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

500010-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937050

NSN

5962-01-293-7050

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500010-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937050

NSN

5962-01-293-7050

MFG

GENERAL DATACOMM INC .

500001-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937051

NSN

5962-01-293-7051

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500001-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937051

NSN

5962-01-293-7051

MFG

GENERAL DATACOMM INC .

500001-003

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937052

NSN

5962-01-293-7052

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500001-003

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937052

NSN

5962-01-293-7052

MFG

GENERAL DATACOMM INC .

540001-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937053

NSN

5962-01-293-7053

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540001-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937053

NSN

5962-01-293-7053

MFG

GENERAL DATACOMM INC .

500301-008

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937054

NSN

5962-01-293-7054

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500301-008

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937054

NSN

5962-01-293-7054

MFG

GENERAL DATACOMM INC .

500304-074

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937055

NSN

5962-01-293-7055

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500304-074

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937055

NSN

5962-01-293-7055

MFG

GENERAL DATACOMM INC .

500303-004

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937056

NSN

5962-01-293-7056

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500303-004

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937056

NSN

5962-01-293-7056

MFG

GENERAL DATACOMM INC .

500301-086

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937057

NSN

5962-01-293-7057

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500301-086

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937057

NSN

5962-01-293-7057

MFG

GENERAL DATACOMM INC .

DM74192N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937100

NSN

5962-01-293-7100

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DM74192N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937100

NSN

5962-01-293-7100

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4
FEATURES PROVIDED: CASCADABLE AND SYNCHRONOUS
III SUPPLEMENTARY FEATURES: 4OCT00 TIEM REVIEWED UNDER GIRDER PROJECT. FG NON-CONCUR CANCELLATION ACTION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: RESIN
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

1489

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937102

NSN

5962-01-293-7102

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1489

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937102

NSN

5962-01-293-7102

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

Description

DESIGN FUNCTION AND QUANTITY: 4 RECEIVER, LINE
FEATURES PROVIDED: MONOLITHIC AND BURN IN
III END ITEM IDENTIFICATION: ASR9, AIRPORT SURVEILLANCE RADAR
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

635A744H01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937102

NSN

5962-01-293-7102

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635A744H01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012937102

NSN

5962-01-293-7102

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

DESIGN FUNCTION AND QUANTITY: 4 RECEIVER, LINE
FEATURES PROVIDED: MONOLITHIC AND BURN IN
III END ITEM IDENTIFICATION: ASR9, AIRPORT SURVEILLANCE RADAR
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC