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5962-01-294-5746

20 Products

ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012945746

NSN

5962-01-294-5746

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ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012945746

NSN

5962-01-294-5746

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.865 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE AND BIPOLAR
III END ITEM IDENTIFICATION: RADAR SET AN/APS-133(V)2
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

6331-1J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012945746

NSN

5962-01-294-5746

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6331-1J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012945746

NSN

5962-01-294-5746

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.865 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE AND BIPOLAR
III END ITEM IDENTIFICATION: RADAR SET AN/APS-133(V)2
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

82S123F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012945746

NSN

5962-01-294-5746

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82S123F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962012945746

NSN

5962-01-294-5746

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.865 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE AND BIPOLAR
III END ITEM IDENTIFICATION: RADAR SET AN/APS-133(V)2
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

IDT74FCT240AP

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945747

NSN

5962-01-294-5747

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IDT74FCT240AP

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945747

NSN

5962-01-294-5747

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 1.020 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 DRIVER
FEATURES PROVIDED: W/BUFFERED OUTPUT AND W/ENABLE AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

IDT74FCT244AP

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945748

NSN

5962-01-294-5748

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IDT74FCT244AP

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945748

NSN

5962-01-294-5748

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 1.020 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 DRIVER, LINE
FEATURES PROVIDED: 3-STATE OUTPUT AND W/ENABLE AND LOW CURRENT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

IDT74FCT640AP

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945750

NSN

5962-01-294-5750

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IDT74FCT640AP

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945750

NSN

5962-01-294-5750

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 1.020 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER, INVERTING
FEATURES PROVIDED: W/ENABLE AND ASYNCHRONOUS AND LOW CURRENT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.30 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.30 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SN75136J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945751

NSN

5962-01-294-5751

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SN75136J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945751

NSN

5962-01-294-5751

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: 3-STATE OUTPUT AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 1025.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SN75136N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945751

NSN

5962-01-294-5751

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SN75136N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945751

NSN

5962-01-294-5751

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: 3-STATE OUTPUT AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 1025.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

7143770-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945765

NSN

5962-01-294-5765

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7143770-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945765

NSN

5962-01-294-5765

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2

ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945765

NSN

5962-01-294-5765

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ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945765

NSN

5962-01-294-5765

MFG

DLA LAND AND MARITIME

5962-8858201EA

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012945804

NSN

5962-01-294-5804

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5962-8858201EA

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012945804

NSN

5962-01-294-5804

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 RECEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

710207-31

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012945804

NSN

5962-01-294-5804

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710207-31

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012945804

NSN

5962-01-294-5804

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 RECEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M0B272A-04

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012945804

NSN

5962-01-294-5804

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M0B272A-04

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962012945804

NSN

5962-01-294-5804

MFG

MITEL SEMICONDUCTOR AMERICANS INC

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 RECEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

156-0578-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945805

NSN

5962-01-294-5805

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156-0578-02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945805

NSN

5962-01-294-5805

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: LOW POWER AND RESETTABLE AND RETRIGGERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

MC14528BCLDS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945805

NSN

5962-01-294-5805

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MC14528BCLDS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945805

NSN

5962-01-294-5805

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: LOW POWER AND RESETTABLE AND RETRIGGERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

49503-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945806

NSN

5962-01-294-5806

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49503-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945806

NSN

5962-01-294-5806

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

725900-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945806

NSN

5962-01-294-5806

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725900-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945806

NSN

5962-01-294-5806

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

725900-50

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945806

NSN

5962-01-294-5806

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725900-50

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945806

NSN

5962-01-294-5806

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

PAL16R4AMJ883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945806

NSN

5962-01-294-5806

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PAL16R4AMJ883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945806

NSN

5962-01-294-5806

MFG

MMI/AMD

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 059

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945806

NSN

5962-01-294-5806

View More Info

ROM/PROM FAMILY 059

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962012945806

NSN

5962-01-294-5806

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.144 INCHES MINIMUM AND 0.176 INCHES MAXIMUM
BODY LENGTH: 0.938 INCHES MINIMUM AND 0.998 INCHES MAXIMUM
BODY WIDTH: 0.263 INCHES MINIMUM AND 0.307 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND HIGH SPEED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE