My Quote Request
5962-01-298-0506
20 Products
628470-2
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012980506
NSN
5962-01-298-0506
MFG
L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION
Description
BODY HEIGHT: 0.184 INCHES MAXIMUM
BODY LENGTH: 0.798 INCHES MAXIMUM
BODY WIDTH: 0.498 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HYBRID AND LOW NOISE
III OVERALL HEIGHT: 0.434 INCHES NOMINAL
III OVERALL LENGTH: 0.798 INCHES MAXIMUM
III OVERALL WIDTH: 0.498 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -57.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 15.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
460/004
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012980065
NSN
5962-01-298-0065
MFG
THALES UK LIMITED, AEROSPACE DIVISION
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
MD27512-25/B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012980065
NSN
5962-01-298-0065
MFG
INTEL CORP SALES OFFICE
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
SS45132
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012980065
NSN
5962-01-298-0065
MFG
BAE SYSTEMS RO DEFENCE
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
230746
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980066
NSN
5962-01-298-0066
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND ELECTRICALLY ALTERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
230758
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980066
NSN
5962-01-298-0066
MFG
EADS NORTH AMERICA INC. DBA EADS NORTH AMERICA TEST AND SERVICES DIV EADS NORTH AMERICA TEST AND SERVICES
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND ELECTRICALLY ALTERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
DM5516A-300
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980066
NSN
5962-01-298-0066
MFG
SEEQ TECHNOLOGY INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND ELECTRICALLY ALTERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980066
NSN
5962-01-298-0066
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
FEATURES PROVIDED: PROGRAMMABLE AND ERASABLE AND ELECTRICALLY ALTERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
874603-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012980067
NSN
5962-01-298-0067
MFG
DPA LABS INC. DBA DPA COMPONENTS INTERNATIONAL
Description
BODY HEIGHT: 0.250 INCHES NOMINAL
BODY LENGTH: 0.875 INCHES NOMINAL
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: ESD
Related Searches:
8746063-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012980067
NSN
5962-01-298-0067
MFG
OGDEN AIR LOGISTICS CENTER
Description
BODY HEIGHT: 0.250 INCHES NOMINAL
BODY LENGTH: 0.875 INCHES NOMINAL
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: ESD
Related Searches:
53S1681J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012980069
NSN
5962-01-298-0069
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.170 INCHES NOMINAL
BODY LENGTH: 1.258 INCHES NOMINAL
BODY WIDTH: 0.554 INCHES NOMINAL
FEATURES PROVIDED: HIGH SPEED AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
08662-80047
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980270
NSN
5962-01-298-0270
MFG
HEWLETT PACKARD CO
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND 3-STATE OUTPUT AND BIPOLAR AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 655.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1816-1693
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980270
NSN
5962-01-298-0270
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT SOLUTION SUPPORT
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND 3-STATE OUTPUT AND BIPOLAR AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 655.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
N82S191F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980270
NSN
5962-01-298-0270
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND 3-STATE OUTPUT AND BIPOLAR AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 655.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 029
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980270
NSN
5962-01-298-0270
ROM/PROM FAMILY 029
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980270
NSN
5962-01-298-0270
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND 3-STATE OUTPUT AND BIPOLAR AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 655.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
08662-80046
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980271
NSN
5962-01-298-0271
MFG
HEWLETT PACKARD CO
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND 3-STATE OUTPUT AND BIPOLAR AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 655.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1816-1692
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980271
NSN
5962-01-298-0271
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT SOLUTION SUPPORT
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND 3-STATE OUTPUT AND BIPOLAR AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 655.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
N82S191F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980271
NSN
5962-01-298-0271
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND 3-STATE OUTPUT AND BIPOLAR AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 655.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 029
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980271
NSN
5962-01-298-0271
ROM/PROM FAMILY 029
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012980271
NSN
5962-01-298-0271
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND 3-STATE OUTPUT AND BIPOLAR AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 655.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
619240-2
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962012980506
NSN
5962-01-298-0506
MFG
L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION
Description
BODY HEIGHT: 0.184 INCHES MAXIMUM
BODY LENGTH: 0.798 INCHES MAXIMUM
BODY WIDTH: 0.498 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HYBRID AND LOW NOISE
III OVERALL HEIGHT: 0.434 INCHES NOMINAL
III OVERALL LENGTH: 0.798 INCHES MAXIMUM
III OVERALL WIDTH: 0.498 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -57.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 15.0 VOLTS MAXIMUM POWER SOURCE