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5962-01-300-7251

20 Products

HS5210B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962013007251

NSN

5962-01-300-7251

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HS5210B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962013007251

NSN

5962-01-300-7251

MFG

SATCON ELECTRONICS CUSTOM HYBRID PRODUCTS DIV

Description

(NON-CORE DATA) BIT QUANTITY: 12
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 1.310 INCHES MAXIMUM
BODY WIDTH: 0.800 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, FREQUENCY TO DC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS

MB8464-15C-WSB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013005982

NSN

5962-01-300-5982

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MB8464-15C-WSB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013005982

NSN

5962-01-300-5982

MFG

FUJITSU MICROELECTRONICS INC.

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND MONOLITHIC AND BIDIRECTIONAL AND W/ENABLE AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 25 INPUT
MAXIMUM POWER DISSIPATION RATING: 495.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

MB8464A-15C-W-SC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013005982

NSN

5962-01-300-5982

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MB8464A-15C-W-SC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013005982

NSN

5962-01-300-5982

MFG

FUJITSU MICROELECTRONICS INC.

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND MONOLITHIC AND BIDIRECTIONAL AND W/ENABLE AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 25 INPUT
MAXIMUM POWER DISSIPATION RATING: 495.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

MB8464A-15CW

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013005982

NSN

5962-01-300-5982

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MB8464A-15CW

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013005982

NSN

5962-01-300-5982

MFG

FUJITSU MICROELECTRONICS INC.

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND MONOLITHIC AND BIDIRECTIONAL AND W/ENABLE AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 25 INPUT
MAXIMUM POWER DISSIPATION RATING: 495.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

OW6264CD3-15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013005982

NSN

5962-01-300-5982

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OW6264CD3-15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013005982

NSN

5962-01-300-5982

MFG

AMERICAN BUSINESS ALLIANCE INC. DBA OMNI WAVE

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND MONOLITHIC AND BIDIRECTIONAL AND W/ENABLE AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 25 INPUT
MAXIMUM POWER DISSIPATION RATING: 495.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

V22916-X4-A954

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013005982

NSN

5962-01-300-5982

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V22916-X4-A954

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013005982

NSN

5962-01-300-5982

MFG

NOKIA SIEMENS NETWORKS GMBH & CO

Description

(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 8192
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND MONOLITHIC AND BIDIRECTIONAL AND W/ENABLE AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 25 INPUT
MAXIMUM POWER DISSIPATION RATING: 495.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

156-2833-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013005984

NSN

5962-01-300-5984

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156-2833-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013005984

NSN

5962-01-300-5984

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ENCODER, PRIORITY, EIGHT TO THREE LINE
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

SN74HC148N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013005984

NSN

5962-01-300-5984

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SN74HC148N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013005984

NSN

5962-01-300-5984

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ENCODER, PRIORITY, EIGHT TO THREE LINE
FEATURES PROVIDED: MONOLITHIC AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

321ML902

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013005987

NSN

5962-01-300-5987

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321ML902

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013005987

NSN

5962-01-300-5987

MFG

TELCOM SEMICONDUCTOR INC

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/EXPANDER AND W/ACTIVE PULL-UP
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.5 VOLTS MINIMUM POWER SOURCE AND 15.0 VOLTS MAXIMUM POWER SOURCE

TSC321ML902X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013005987

NSN

5962-01-300-5987

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TSC321ML902X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013005987

NSN

5962-01-300-5987

MFG

TELCOM SEMICONDUCTOR INC

Description

BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/EXPANDER AND W/ACTIVE PULL-UP
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.5 VOLTS MINIMUM POWER SOURCE AND 15.0 VOLTS MAXIMUM POWER SOURCE

NE515A

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013007212

NSN

5962-01-300-7212

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NE515A

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013007212

NSN

5962-01-300-7212

MFG

PHILIPS SEMICONDUCTORS INC

SG3503J

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013007213

NSN

5962-01-300-7213

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SG3503J

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013007213

NSN

5962-01-300-7213

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

DM28C256-350/B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007214

NSN

5962-01-300-7214

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DM28C256-350/B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007214

NSN

5962-01-300-7214

MFG

SEEQ TECHNOLOGY INC

676-9400-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007215

NSN

5962-01-300-7215

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676-9400-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007215

NSN

5962-01-300-7215

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

143503529

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007217

NSN

5962-01-300-7217

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143503529

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007217

NSN

5962-01-300-7217

MFG

EATON CORPORATION

DS3668N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007217

NSN

5962-01-300-7217

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DS3668N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007217

NSN

5962-01-300-7217

MFG

NATIONAL SEMICONDUCTOR CORPORATION

AM91L01APC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007218

NSN

5962-01-300-7218

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AM91L01APC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007218

NSN

5962-01-300-7218

MFG

ADVANCED MICRO DEVICES INC DBA A M D

HM1-7643A-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007219

NSN

5962-01-300-7219

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HM1-7643A-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007219

NSN

5962-01-300-7219

MFG

INTERSIL CORPORATION

HM1-7642A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007220

NSN

5962-01-300-7220

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HM1-7642A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007220

NSN

5962-01-300-7220

MFG

INTERSIL CORPORATION

HSDC-8921-1-A-B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007222

NSN

5962-01-300-7222

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HSDC-8921-1-A-B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013007222

NSN

5962-01-300-7222

MFG

DATA DEVICE CORPORATION