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5962-01-302-4221

20 Products

MC74HC541N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024221

NSN

5962-01-302-4221

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MC74HC541N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024221

NSN

5962-01-302-4221

MFG

FREESCALE SEMICONDUCTOR INC.

Description

DESIGN FUNCTION AND QUANTITY: 8 BUFFER, NONINVERTING AND 8 DRIVER, LINE AND 8 RECEIVER, LINE
FEATURES PROVIDED: HIGH PERFORMANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: OCTAL 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

I15-0000-125

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024222

NSN

5962-01-302-4222

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I15-0000-125

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024222

NSN

5962-01-302-4222

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
BODY LENGTH: 0.715 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 BUFFER, NONINVERTING
FEATURES PROVIDED: HIGH PERFORMANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

MC74HC125N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024222

NSN

5962-01-302-4222

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MC74HC125N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024222

NSN

5962-01-302-4222

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
BODY LENGTH: 0.715 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 BUFFER, NONINVERTING
FEATURES PROVIDED: HIGH PERFORMANCE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

502 DY

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024296

NSN

5962-01-302-4296

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502 DY

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024296

NSN

5962-01-302-4296

MFG

LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP

411210

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013024367

NSN

5962-01-302-4367

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411210

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013024367

NSN

5962-01-302-4367

MFG

TARGET CORPORATION DBA TARGET

Description

BODY HEIGHT: 0.181 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.608 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-8 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, HIGH SPEED
FEATURES PROVIDED: INTERNALLY COMPENSATED AND FAST SETTLING AND FREQUENCY COMPENSATED AND GAIN CONTROLLED
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROELECTRONICS DEVICE, OPERATIONS AMPLIFIER
SPECIAL FEATURES: HYBRID, FAST SETTLING, WIDEBAND OPERATIONAL AMPLIFIER
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TIME RATING PER CHACTERISTIC: 8.00 NANOSECONDS NOMINAL SETTLING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -20.0 VOLTS MAXIMUM POWER SOURCE

5962-8991101XC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013024367

NSN

5962-01-302-4367

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5962-8991101XC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013024367

NSN

5962-01-302-4367

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

BODY HEIGHT: 0.181 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.608 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-8 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, HIGH SPEED
FEATURES PROVIDED: INTERNALLY COMPENSATED AND FAST SETTLING AND FREQUENCY COMPENSATED AND GAIN CONTROLLED
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROELECTRONICS DEVICE, OPERATIONS AMPLIFIER
SPECIAL FEATURES: HYBRID, FAST SETTLING, WIDEBAND OPERATIONAL AMPLIFIER
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TIME RATING PER CHACTERISTIC: 8.00 NANOSECONDS NOMINAL SETTLING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -20.0 VOLTS MAXIMUM POWER SOURCE

CLC220A8C

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013024367

NSN

5962-01-302-4367

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CLC220A8C

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013024367

NSN

5962-01-302-4367

MFG

COMLINEAR CORP

Description

BODY HEIGHT: 0.181 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.608 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-8 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, HIGH SPEED
FEATURES PROVIDED: INTERNALLY COMPENSATED AND FAST SETTLING AND FREQUENCY COMPENSATED AND GAIN CONTROLLED
INCLOSURE CONFIGURATION: QUAD-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROELECTRONICS DEVICE, OPERATIONS AMPLIFIER
SPECIAL FEATURES: HYBRID, FAST SETTLING, WIDEBAND OPERATIONAL AMPLIFIER
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TIME RATING PER CHACTERISTIC: 8.00 NANOSECONDS NOMINAL SETTLING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -20.0 VOLTS MAXIMUM POWER SOURCE

717801474-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024368

NSN

5962-01-302-4368

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717801474-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024368

NSN

5962-01-302-4368

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN

Description

(NON-CORE DATA) BIT QUANTITY: 64
BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
BODY WIDTH: 0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-4 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND W/ENABLE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

L10C23KMB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024368

NSN

5962-01-302-4368

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L10C23KMB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024368

NSN

5962-01-302-4368

MFG

LOGIC DEVICES INCORPORATED

Description

(NON-CORE DATA) BIT QUANTITY: 64
BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
BODY WIDTH: 0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-4 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND W/ENABLE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

TDS6059

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024368

NSN

5962-01-302-4368

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TDS6059

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024368

NSN

5962-01-302-4368

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV

Description

(NON-CORE DATA) BIT QUANTITY: 64
BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
BODY WIDTH: 0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-4 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND W/ENABLE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

TMC2023C3V/6059

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024368

NSN

5962-01-302-4368

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TMC2023C3V/6059

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024368

NSN

5962-01-302-4368

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV

Description

(NON-CORE DATA) BIT QUANTITY: 64
BODY HEIGHT: 0.060 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
BODY WIDTH: 0.442 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: C-4 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND W/CLOCK AND W/ENABLE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

169702-09

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013024369

NSN

5962-01-302-4369

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169702-09

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013024369

NSN

5962-01-302-4369

MFG

GE AVIATION SYSTEMS LLC

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

548413-06-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013024369

NSN

5962-01-302-4369

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548413-06-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013024369

NSN

5962-01-302-4369

MFG

GE AVIATION SYSTEMS LLC

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

8411102YA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013024369

NSN

5962-01-302-4369

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8411102YA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013024369

NSN

5962-01-302-4369

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 247

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013024369

NSN

5962-01-302-4369

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ROM/PROM FAMILY 247

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013024369

NSN

5962-01-302-4369

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND ULTRAVIOLET ERASABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

53180-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024370

NSN

5962-01-302-4370

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53180-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024370

NSN

5962-01-302-4370

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.250 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5962-8605301LA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024370

NSN

5962-01-302-4370

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5962-8605301LA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024370

NSN

5962-01-302-4370

MFG

DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.250 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

G471490-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024370

NSN

5962-01-302-4370

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G471490-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024370

NSN

5962-01-302-4370

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.250 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 122

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024370

NSN

5962-01-302-4370

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ROM/PROM FAMILY 122

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024370

NSN

5962-01-302-4370

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.250 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

54F544SDMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024376

NSN

5962-01-302-4376

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54F544SDMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013024376

NSN

5962-01-302-4376

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.250 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 8 TRANSCEIVER
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND MONOLITHIC AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE