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5962-01-303-5762

20 Products

SN74HCT374N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

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SN74HCT374N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5962-3865652BRB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

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5962-3865652BRB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5962-3865652BRX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

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5962-3865652BRX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5962-8550701RX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

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5962-8550701RX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

685-7372-137

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

View More Info

685-7372-137

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/65652BRA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

View More Info

M38510/65652BRA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/65652BRB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

View More Info

M38510/65652BRB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/65652BRX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

View More Info

M38510/65652BRX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

MC54HCT374J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

View More Info

MC54HCT374J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

MC54HCT374J/BEXJC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

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MC54HCT374J/BEXJC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

MC54HCT374N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

View More Info

MC54HCT374N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

MOTOROLA SEMICONDUCTOR PRODUCTS INC SUB OF MOTOROLA INC

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

MC74HCT374N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

View More Info

MC74HCT374N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

MD74SC374AC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

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MD74SC374AC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013035762

NSN

5962-01-303-5762

MFG

MITEL CORP ADAPTIVE SYSTEMS DIV ADAPTIVE SYSTEMS DIV

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/65652BRA
DESIGN FUNCTION AND QUANTITY: 8 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND 3-STATE OUTPUT AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 420.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/656
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/656 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 42.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

5341-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

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5341-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20802BKA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/208
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/208 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

54S474

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

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54S474

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20802BKA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/208
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/208 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

7641

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

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7641

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20802BKA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/208
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/208 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

82S141

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

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82S141

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20802BKA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/208
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/208 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

93448

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

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93448

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20802BKA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/208
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/208 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/20802BKA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

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M38510/20802BKA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20802BKA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/208
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/208 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/20802BKB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

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M38510/20802BKB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013035763

NSN

5962-01-303-5763

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-6 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/20802BKA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND SCHOTTKY
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 1.02 WATTS
MEMORY DEVICE TYPE: ROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/208
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/208 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE