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5962-01-310-3057

20 Products

ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103057

NSN

5962-01-310-3057

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ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103057

NSN

5962-01-310-3057

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.155 INCHES MAXIMUM
BODY LENGTH: 1.220 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

PAL20L10

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103057

NSN

5962-01-310-3057

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PAL20L10

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103057

NSN

5962-01-310-3057

MFG

MMI/AMD

Description

BODY HEIGHT: 0.155 INCHES MAXIMUM
BODY LENGTH: 1.220 INCHES MAXIMUM
BODY WIDTH: 0.600 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

165-2024-00

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013103145

NSN

5962-01-310-3145

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165-2024-00

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013103145

NSN

5962-01-310-3145

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

BODY HEIGHT: 0.126 INCHES MAXIMUM
BODY LENGTH: 1.485 INCHES MINIMUM AND 1.515 INCHES MAXIMUM
BODY WIDTH: 0.585 INCHES MINIMUM AND 0.615 INCHES MAXIMUM
FEATURES PROVIDED: HYBRID
III END ITEM IDENTIFICATION: 6625-01-252-0344 OSCILLOSCOPE
INCLOSURE CONFIGURATION: SINGLE-IN-LINE
INCLOSURE MATERIAL: CERAMIC
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PIN

1002145-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013103147

NSN

5962-01-310-3147

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1002145-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013103147

NSN

5962-01-310-3147

MFG

RAYTHEON COMPANY DBA RAYTHEON

3246124-0001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013103147

NSN

5962-01-310-3147

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3246124-0001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013103147

NSN

5962-01-310-3147

MFG

RAYTHEON COMPANY

MS1002-1/DC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013103147

NSN

5962-01-310-3147

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MS1002-1/DC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013103147

NSN

5962-01-310-3147

MFG

MITEL SEMICONDUCTOR AMERICANS INC

MS1002-1/DG

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013103147

NSN

5962-01-310-3147

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MS1002-1/DG

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013103147

NSN

5962-01-310-3147

MFG

MITEL SEMICONDUCTOR AMERICANS INC

MS1002-1/LW/DC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013103147

NSN

5962-01-310-3147

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MS1002-1/LW/DC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013103147

NSN

5962-01-310-3147

MFG

MITEL SEMICONDUCTOR AMERICANS INC

1D54386-511

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103151

NSN

5962-01-310-3151

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1D54386-511

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103151

NSN

5962-01-310-3151

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY

Description

DESIGN CONTROL REFERENCE: 1D54386-511
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
INPUT CIRCUIT PATTERN: 20 INPUT
MANUFACTURERS CODE: 18355
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:

1D54386-513

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103152

NSN

5962-01-310-3152

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1D54386-513

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103152

NSN

5962-01-310-3152

MFG

MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE DEFENSE AND ELECTRONICS SYSTEMS

Description

DESIGN CONTROL REFERENCE: 1D54386-513
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
INPUT CIRCUIT PATTERN: 20 INPUT
MANUFACTURERS CODE: 0FC43
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

1134608-0401

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103153

NSN

5962-01-310-3153

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1134608-0401

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103153

NSN

5962-01-310-3153

MFG

PALOMAR PRODUCTS INC.

Description

FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: 5895-01-206-2658 SWITCHING MATRI
MEMORY DEVICE TYPE: ROM

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103153

NSN

5962-01-310-3153

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103153

NSN

5962-01-310-3153

MFG

DLA LAND AND MARITIME

Description

FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: 5895-01-206-2658 SWITCHING MATRI
MEMORY DEVICE TYPE: ROM

1134608-0501

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103154

NSN

5962-01-310-3154

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1134608-0501

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103154

NSN

5962-01-310-3154

MFG

PALOMAR PRODUCTS INC.

Description

FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: 5895-01-206-2658 SWITCHING MATRI
MEMORY DEVICE TYPE: ROM

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103154

NSN

5962-01-310-3154

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103154

NSN

5962-01-310-3154

MFG

DLA LAND AND MARITIME

Description

FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: 5895-01-206-2658 SWITCHING MATRI
MEMORY DEVICE TYPE: ROM

1134603

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103155

NSN

5962-01-310-3155

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1134603

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103155

NSN

5962-01-310-3155

MFG

PALOMAR PRODUCTS INC.

Description

FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: 5895-01-206-2658 SWITCHING MATRI
MEMORY DEVICE TYPE: ROM

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103155

NSN

5962-01-310-3155

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103155

NSN

5962-01-310-3155

MFG

DLA LAND AND MARITIME

Description

FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: 5895-01-206-2658 SWITCHING MATRI
MEMORY DEVICE TYPE: ROM

9986-CCMN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103159

NSN

5962-01-310-3159

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9986-CCMN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103159

NSN

5962-01-310-3159

MFG

BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE

M38510/50401BRA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103159

NSN

5962-01-310-3159

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M38510/50401BRA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103159

NSN

5962-01-310-3159

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 049

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103159

NSN

5962-01-310-3159

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ROM/PROM FAMILY 049

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013103159

NSN

5962-01-310-3159

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 GATE, ARRAY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE

IDT7130LA120CB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103160

NSN

5962-01-310-3160

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IDT7130LA120CB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013103160

NSN

5962-01-310-3160

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 128
BODY HEIGHT: 0.280 INCHES MAXIMUM
BODY LENGTH: 1.420 INCHES MAXIMUM
BODY WIDTH: 0.604 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND HIGH PERFORMANCE AND HIGH SPEED AND LOW POWER AND ASYNCHRONOUS AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: 1430-01-286-1314 GUIDED MISSLE
III OVERALL HEIGHT: 0.455 INCHES MAXIMUM
III OVERALL LENGTH: 1.420 INCHES MAXIMUM
III OVERALL WIDTH: 0.620 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 24 INPUT
MAXIMUM POWER DISSIPATION RATING: 135.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE