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5962-01-311-2613

20 Products

MK48T02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112613

NSN

5962-01-311-2613

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MK48T02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112613

NSN

5962-01-311-2613

MFG

STMICROELECTRONICS INC

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS

8255AB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112614

NSN

5962-01-311-2614

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8255AB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112614

NSN

5962-01-311-2614

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC

PAL20X8MJ883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112615

NSN

5962-01-311-2615

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PAL20X8MJ883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112615

NSN

5962-01-311-2615

MFG

MMI/AMD

Description

BODY HEIGHT: 0.130 INCHES NOMINAL
BODY LENGTH: 1.196 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 8 GATE, AND-OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

PAL16R6AMJ883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112616

NSN

5962-01-311-2616

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PAL16R6AMJ883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112616

NSN

5962-01-311-2616

MFG

MMI/AMD

Description

BODY HEIGHT: 0.135 INCHES NOMINAL
BODY LENGTH: 1.020 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 6 GATE, AND-OR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

AM27128A-2DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112617

NSN

5962-01-311-2617

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AM27128A-2DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112617

NSN

5962-01-311-2617

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

FEATURES PROVIDED: HERMETICALLY SEALED AND ERASABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 15 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

IDT6116SA90TDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112618

NSN

5962-01-311-2618

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IDT6116SA90TDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112618

NSN

5962-01-311-2618

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

3221378-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112842

NSN

5962-01-311-2842

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3221378-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112842

NSN

5962-01-311-2842

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND MONOLITHIC AND 3-STATE OUTPUT AND W/ENABLE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

3221378-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112842

NSN

5962-01-311-2842

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3221378-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112842

NSN

5962-01-311-2842

MFG

NAVAL SEA SYSTEMS COMMAND

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND MONOLITHIC AND 3-STATE OUTPUT AND W/ENABLE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

41216

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112842

NSN

5962-01-311-2842

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41216

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112842

NSN

5962-01-311-2842

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND MONOLITHIC AND 3-STATE OUTPUT AND W/ENABLE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

N82S123F/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112842

NSN

5962-01-311-2842

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N82S123F/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112842

NSN

5962-01-311-2842

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND MONOLITHIC AND 3-STATE OUTPUT AND W/ENABLE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112842

NSN

5962-01-311-2842

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112842

NSN

5962-01-311-2842

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND MONOLITHIC AND 3-STATE OUTPUT AND W/ENABLE
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 625.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

3221385-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112843

NSN

5962-01-311-2843

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3221385-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112843

NSN

5962-01-311-2843

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

41218

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112843

NSN

5962-01-311-2843

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41218

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112843

NSN

5962-01-311-2843

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

AM27S13DCB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112843

NSN

5962-01-311-2843

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AM27S13DCB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112843

NSN

5962-01-311-2843

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

ROM/PROM FAMILY 008

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112843

NSN

5962-01-311-2843

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ROM/PROM FAMILY 008

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112843

NSN

5962-01-311-2843

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

44267-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112844

NSN

5962-01-311-2844

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44267-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112844

NSN

5962-01-311-2844

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.900 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED AND PROGRAMMED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

722919-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112844

NSN

5962-01-311-2844

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722919-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112844

NSN

5962-01-311-2844

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.900 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED AND PROGRAMMED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 030

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112844

NSN

5962-01-311-2844

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ROM/PROM FAMILY 030

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013112844

NSN

5962-01-311-2844

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.900 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED AND PROGRAMMED AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

0141A0510

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112845

NSN

5962-01-311-2845

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0141A0510

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112845

NSN

5962-01-311-2845

MFG

MARTIN MARIETTA TECHNOLOGIES INC SUB OF MARTIN MARIETTA CORP AERO AND NAVAL SYSTEMS

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND PRESETTABLE AND SYNCHRONOUS AND HIGH RELIABILITY AND SCHOTTKY AND HERMETICALLY SEALED AND W/CLOCK
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE

A0510

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112845

NSN

5962-01-311-2845

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A0510

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013112845

NSN

5962-01-311-2845

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND PRESETTABLE AND SYNCHRONOUS AND HIGH RELIABILITY AND SCHOTTKY AND HERMETICALLY SEALED AND W/CLOCK
III OVERALL HEIGHT: 0.325 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE