My Quote Request
5962-01-337-1764
20 Products
74HCT08N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371764
NSN
5962-01-337-1764
MFG
PHILIPS SEMICONDUCTORS INC
Description
DESIGN FUNCTION AND QUANTITY: 4 GATE, AND
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
AM2952APC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371765
NSN
5962-01-337-1765
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 8
DESIGN FUNCTION AND QUANTITY: 1 PORT, INPUT/OUTPUT
Related Searches:
AM2960PC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371766
NSN
5962-01-337-1766
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 16
DESIGN FUNCTION AND QUANTITY: 1 DETECTOR
Related Searches:
33937853
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371767
NSN
5962-01-337-1767
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS
Description
DESIGN FUNCTION AND QUANTITY: 1 MEMORY, RANDOM ACCESS
SPECIAL FEATURES: TERMINAL QTY-18
Related Searches:
HM511000AP-10
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371767
NSN
5962-01-337-1767
MFG
HITACHI AMERICA LTD. DIV POWER SYSTEMS
Description
DESIGN FUNCTION AND QUANTITY: 1 MEMORY, RANDOM ACCESS
SPECIAL FEATURES: TERMINAL QTY-18
Related Searches:
M5M41000AP10
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371767
NSN
5962-01-337-1767
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS
Description
DESIGN FUNCTION AND QUANTITY: 1 MEMORY, RANDOM ACCESS
SPECIAL FEATURES: TERMINAL QTY-18
Related Searches:
SN75ALS192N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371768
NSN
5962-01-337-1768
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 4 DRIVER, LINE DIFFERENTIAL
Related Searches:
SN75ALS193J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371769
NSN
5962-01-337-1769
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 4 RECEIVER, LINE DIFFERENTIAL
Related Searches:
HM6787P-25
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371770
NSN
5962-01-337-1770
MFG
HITACHI AMERICA LTD. DIV POWER SYSTEMS
Description
DESIGN FUNCTION AND QUANTITY: 1 MEMORY, RANDOM ACCESS
SPECIAL FEATURES: TERMINAL QTY-22
Related Searches:
N8X305N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371771
NSN
5962-01-337-1771
MFG
PHILIPS SEMICONDUCTORS INC
Description
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
Related Searches:
156-0413-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371772
NSN
5962-01-337-1772
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
DESIGN FUNCTION AND QUANTITY: 4 SCHMITT TRIGGER
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
Related Searches:
156-0413-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371772
NSN
5962-01-337-1772
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
DESIGN FUNCTION AND QUANTITY: 4 SCHMITT TRIGGER
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
Related Searches:
41223-753-00-9
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371774
NSN
5962-01-337-1774
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
DESIGN FUNCTION AND QUANTITY: 8 TRANSCEIVER
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
IDT29FCT52ALB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371774
NSN
5962-01-337-1774
MFG
INTEGRATED DEVICE TECHNOLOGY INC
Description
DESIGN FUNCTION AND QUANTITY: 8 TRANSCEIVER
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
41223-603-00/6
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371775
NSN
5962-01-337-1775
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
DESIGN FUNCTION AND QUANTITY: 8 BUFFER AND 8 DRIVER, LINE
FEATURES PROVIDED: 3-STATE OUTPUT
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
41223-8603-00-6
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371775
NSN
5962-01-337-1775
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
DESIGN FUNCTION AND QUANTITY: 8 BUFFER AND 8 DRIVER, LINE
FEATURES PROVIDED: 3-STATE OUTPUT
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
IDT54FCT244ALB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371775
NSN
5962-01-337-1775
MFG
INTEGRATED DEVICE TECHNOLOGY INC
Description
DESIGN FUNCTION AND QUANTITY: 8 BUFFER AND 8 DRIVER, LINE
FEATURES PROVIDED: 3-STATE OUTPUT
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
41223-609-00-3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371776
NSN
5962-01-337-1776
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
DESIGN FUNCTION AND QUANTITY: 1 LATCH
FEATURES PROVIDED: HIGH SPEED AND HIGH PERFORMANCE AND BURN IN, MIL-STD-883, CLASS B
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
IDT54FCT842BLB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371776
NSN
5962-01-337-1776
MFG
INTEGRATED DEVICE TECHNOLOGY INC
Description
DESIGN FUNCTION AND QUANTITY: 1 LATCH
FEATURES PROVIDED: HIGH SPEED AND HIGH PERFORMANCE AND BURN IN, MIL-STD-883, CLASS B
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
41223-751-00-3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013371777
NSN
5962-01-337-1777
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
DESIGN FUNCTION AND QUANTITY: 1 BUFFER, NONINVERTING
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC