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5962-01-342-1445

20 Products

I26-0021-004

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421445

NSN

5962-01-342-1445

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I26-0021-004

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421445

NSN

5962-01-342-1445

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

639084-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420788

NSN

5962-01-342-0788

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639084-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420788

NSN

5962-01-342-0788

MFG

BAE SYSTEMS CONTROLS INC

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.250 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PIN
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM INPUT

M38510/50501BLA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420788

NSN

5962-01-342-0788

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M38510/50501BLA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420788

NSN

5962-01-342-0788

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.250 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PIN
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM INPUT

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420788

NSN

5962-01-342-0788

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420788

NSN

5962-01-342-0788

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.250 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 20 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.2 WATTS
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PIN
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 12.0 VOLTS MAXIMUM INPUT

390-0595-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420790

NSN

5962-01-342-0790

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390-0595-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420790

NSN

5962-01-342-0790

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND 3-STATE OUTPUT AND PROGRAMMED
MEMORY DEVICE TYPE: ROM
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420790

NSN

5962-01-342-0790

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ROM/PROM FAMILY 013

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420790

NSN

5962-01-342-0790

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND 3-STATE OUTPUT AND PROGRAMMED
MEMORY DEVICE TYPE: ROM
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

111788-08

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420791

NSN

5962-01-342-0791

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111788-08

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420791

NSN

5962-01-342-0791

MFG

ROLM CORP MIL SPEC COMPUTERS

17-201417-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420791

NSN

5962-01-342-0791

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17-201417-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420791

NSN

5962-01-342-0791

MFG

ROLM CORP MIL SPEC COMPUTERS

201417-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420791

NSN

5962-01-342-0791

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201417-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420791

NSN

5962-01-342-0791

MFG

ROLM CORP MIL SPEC COMPUTERS

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420791

NSN

5962-01-342-0791

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420791

NSN

5962-01-342-0791

MFG

DLA LAND AND MARITIME

ROM/PROM FAMILY 049

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420791

NSN

5962-01-342-0791

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ROM/PROM FAMILY 049

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013420791

NSN

5962-01-342-0791

MFG

DLA LAND AND MARITIME

SNC54LS173AJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421056

NSN

5962-01-342-1056

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SNC54LS173AJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421056

NSN

5962-01-342-1056

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

AM9130BDC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421057

NSN

5962-01-342-1057

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AM9130BDC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421057

NSN

5962-01-342-1057

MFG

ADVANCED MICRO DEVICES INC DBA A M D

MCM14537CL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421058

NSN

5962-01-342-1058

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MCM14537CL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421058

NSN

5962-01-342-1058

MFG

FREESCALE SEMICONDUCTOR INC.

I01-3000-469

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421443

NSN

5962-01-342-1443

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I01-3000-469

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421443

NSN

5962-01-342-1443

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

(NON-CORE DATA) BIT QUANTITY: 8
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, UP/DOWN

SN74ACT469ANS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421443

NSN

5962-01-342-1443

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SN74ACT469ANS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421443

NSN

5962-01-342-1443

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 8
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, UP/DOWN

10279-8303

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421444

NSN

5962-01-342-1444

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10279-8303

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421444

NSN

5962-01-342-1444

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

PRGD-PAL16L8ACN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421444

NSN

5962-01-342-1444

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PRGD-PAL16L8ACN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421444

NSN

5962-01-342-1444

MFG

MMI/AMD

1818-4100

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421445

NSN

5962-01-342-1445

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1818-4100

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421445

NSN

5962-01-342-1445

MFG

HEWLETT PACKARD CO

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

HM62256LP-12SL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421445

NSN

5962-01-342-1445

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HM62256LP-12SL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013421445

NSN

5962-01-342-1445

MFG

HITACHI AMERICA LTD. DIV POWER SYSTEMS

Description

INCLOSURE CONFIGURATION: DUAL-IN-LINE
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC