My Quote Request
5962-01-359-6565
20 Products
F54F823DM
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013596565
NSN
5962-01-359-6565
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 9
TERMINAL TYPE AND QUANTITY: 24 PIN
Related Searches:
JM38510/65003BCA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013595517
NSN
5962-01-359-5517
JM38510/65003BCA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013595517
NSN
5962-01-359-5517
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
III END ITEM IDENTIFICATION: 1055-01-251-9756
MANUFACTURERS CODE: 18876
MFR SOURCE CONTROLLING REFERENCE: 13030818
SPEC/STD CONTROLLING DATA:
Related Searches:
JM38510/65003BCX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013595517
NSN
5962-01-359-5517
JM38510/65003BCX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013595517
NSN
5962-01-359-5517
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
III END ITEM IDENTIFICATION: 1055-01-251-9756
MANUFACTURERS CODE: 18876
MFR SOURCE CONTROLLING REFERENCE: 13030818
SPEC/STD CONTROLLING DATA:
Related Searches:
G339384
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013595614
NSN
5962-01-359-5614
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 REGISTER
III END ITEM IDENTIFICATION: MILSTAR
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G339384-1
PART NAME ASSIGNED BY CONTROLLING AGENCY: 8-BIT TRI STATE REGISTER
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: RADIATION HARDNED IAW ESD-82-TE-1390B;ESD;HCI
Related Searches:
G339384-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013595614
NSN
5962-01-359-5614
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 REGISTER
III END ITEM IDENTIFICATION: MILSTAR
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G339384-1
PART NAME ASSIGNED BY CONTROLLING AGENCY: 8-BIT TRI STATE REGISTER
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: RADIATION HARDNED IAW ESD-82-TE-1390B;ESD;HCI
Related Searches:
SNJ54AS374J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013595614
NSN
5962-01-359-5614
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 REGISTER
III END ITEM IDENTIFICATION: MILSTAR
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: G339384-1
PART NAME ASSIGNED BY CONTROLLING AGENCY: 8-BIT TRI STATE REGISTER
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: RADIATION HARDNED IAW ESD-82-TE-1390B;ESD;HCI
Related Searches:
34056418-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013595876
NSN
5962-01-359-5876
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-CLEARWATER SPACE
Description
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 1.750 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ADDER
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HYBRID AND W/CLOCK AND W/CLEAR
III END ITEM IDENTIFICATION: INERTIAL SYSTEM NAVIGATION
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: PULSE ACCUMULATOR MODULE,HYBRID
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 64 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
797320-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013595878
NSN
5962-01-359-5878
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE
MEMORY DEVICE TYPE: EEPROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: BOOT PROM
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
797320-1-0040
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013595878
NSN
5962-01-359-5878
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE
MEMORY DEVICE TYPE: EEPROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: BOOT PROM
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
NH797320-1-0040
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013595878
NSN
5962-01-359-5878
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE
MEMORY DEVICE TYPE: EEPROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: BOOT PROM
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013595878
NSN
5962-01-359-5878
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: PROGRAMMED AND ELECTROSTATIC SENSITIVE
MEMORY DEVICE TYPE: EEPROM
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: BOOT PROM
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
Related Searches:
330420-003
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013595880
NSN
5962-01-359-5880
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MINIMUM AND 0.660 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 10.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: LOW POWER AND HIGH RELIABILITY AND HIGH PERFORMANCE AND W/ENABLE AND MONOLITHIC AND BIDIRECTIONAL AND PROGRAMMED AND ERASABLE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 26 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-8863401UC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013595880
NSN
5962-01-359-5880
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MINIMUM AND 0.660 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 10.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: LOW POWER AND HIGH RELIABILITY AND HIGH PERFORMANCE AND W/ENABLE AND MONOLITHIC AND BIDIRECTIONAL AND PROGRAMMED AND ERASABLE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 26 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AT28HC256L-12UM/883SL252
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013595880
NSN
5962-01-359-5880
AT28HC256L-12UM/883SL252
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013595880
NSN
5962-01-359-5880
MFG
ATMEL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MINIMUM AND 0.660 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 10.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: LOW POWER AND HIGH RELIABILITY AND HIGH PERFORMANCE AND W/ENABLE AND MONOLITHIC AND BIDIRECTIONAL AND PROGRAMMED AND ERASABLE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 26 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013595880
NSN
5962-01-359-5880
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MINIMUM AND 0.660 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 10.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: LOW POWER AND HIGH RELIABILITY AND HIGH PERFORMANCE AND W/ENABLE AND MONOLITHIC AND BIDIRECTIONAL AND PROGRAMMED AND ERASABLE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 26 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
X28C256BKMB-12-C6767
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013595880
NSN
5962-01-359-5880
X28C256BKMB-12-C6767
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013595880
NSN
5962-01-359-5880
MFG
XICOR INC
Description
(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MINIMUM AND 0.660 INCHES MAXIMUM
BODY WIDTH: 0.540 INCHES MINIMUM AND 0.550 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 10.00 OUTPUT PICOFARADS MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: LOW POWER AND HIGH RELIABILITY AND HIGH PERFORMANCE AND W/ENABLE AND MONOLITHIC AND BIDIRECTIONAL AND PROGRAMMED AND ERASABLE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 26 INPUT
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DG140BP
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013596205
NSN
5962-01-359-6205
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
MICROCIRCUIT,DIGITAL
Related Searches:
74ACT04PC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013596206
NSN
5962-01-359-6206
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
MICROCIRCUIT,DIGITAL
Related Searches:
Z85C3008PSC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013596207
NSN
5962-01-359-6207
MFG
ZILOG INC
Description
MICROCIRCUIT,DIGITAL
Related Searches:
54F823SDMQB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013596565
NSN
5962-01-359-6565
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 9
TERMINAL TYPE AND QUANTITY: 24 PIN