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5962-01-361-0137

20 Products

G494565-214

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013610137

NSN

5962-01-361-0137

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G494565-214

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013610137

NSN

5962-01-361-0137

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MILSTAR
SPECIAL FEATURES: MAKE FROM P/N G371064-1;ESD

49498-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608830

NSN

5962-01-360-8830

View More Info

49498-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608830

NSN

5962-01-360-8830

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

722970-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608830

NSN

5962-01-360-8830

View More Info

722970-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608830

NSN

5962-01-360-8830

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

M38510/22401BYA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608830

NSN

5962-01-360-8830

View More Info

M38510/22401BYA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608830

NSN

5962-01-360-8830

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 070

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608830

NSN

5962-01-360-8830

View More Info

ROM/PROM FAMILY 070

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608830

NSN

5962-01-360-8830

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

49499-3

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608831

NSN

5962-01-360-8831

View More Info

49499-3

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608831

NSN

5962-01-360-8831

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

49499-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608831

NSN

5962-01-360-8831

View More Info

49499-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608831

NSN

5962-01-360-8831

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

722970-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608831

NSN

5962-01-360-8831

View More Info

722970-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608831

NSN

5962-01-360-8831

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

M38510/22401BYA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608831

NSN

5962-01-360-8831

View More Info

M38510/22401BYA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608831

NSN

5962-01-360-8831

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 070

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608831

NSN

5962-01-360-8831

View More Info

ROM/PROM FAMILY 070

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608831

NSN

5962-01-360-8831

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

49500-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608832

NSN

5962-01-360-8832

View More Info

49500-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608832

NSN

5962-01-360-8832

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

722970-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608832

NSN

5962-01-360-8832

View More Info

722970-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608832

NSN

5962-01-360-8832

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

M38510/22401BYA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608832

NSN

5962-01-360-8832

View More Info

M38510/22401BYA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608832

NSN

5962-01-360-8832

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 070

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608832

NSN

5962-01-360-8832

View More Info

ROM/PROM FAMILY 070

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608832

NSN

5962-01-360-8832

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

49501-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608833

NSN

5962-01-360-8833

View More Info

49501-4

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608833

NSN

5962-01-360-8833

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

722970-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608833

NSN

5962-01-360-8833

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722970-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608833

NSN

5962-01-360-8833

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

M38510/22401BYA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608833

NSN

5962-01-360-8833

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M38510/22401BYA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608833

NSN

5962-01-360-8833

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 070

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608833

NSN

5962-01-360-8833

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ROM/PROM FAMILY 070

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013608833

NSN

5962-01-360-8833

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 0.172 INCHES MINIMUM AND 0.217 INCHES MAXIMUM
BODY LENGTH: 1.490 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 125.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ULTRAVIOLET ERASABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM POWER SOURCE AND 6.25 VOLTS MAXIMUM POWER SOURCE

509971-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013609386

NSN

5962-01-360-9386

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509971-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013609386

NSN

5962-01-360-9386

MFG

STMICROELECTRONICS INC

510636-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013609387

NSN

5962-01-360-9387

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510636-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013609387

NSN

5962-01-360-9387

MFG

STMICROELECTRONICS INC