My Quote Request
5962-01-363-7902
20 Products
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013637902
NSN
5962-01-363-7902
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
G494565-210
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962013638116
NSN
5962-01-363-8116
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 4 COMPARATOR
FEATURES PROVIDED: HERMETICALLY SEALED
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 0.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MCKT LINEAR - QUAD COMPARATOR
SPECIAL FEATURES: ESD;HCI. SELECTED FROM P/N 49956 G339691-1. MFG P/N 06665 PM139-130Y
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 14 BEAM LEAD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
G494565-111
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013638117
NSN
5962-01-363-8117
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR, CLOCK AND 1 CONTROL
FEATURES PROVIDED: HERMETICALLY SEALED
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 840.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MCKT DIGITAL-CLOCK GENERATOR AND MICROCYCLE LENGTH CONTROLLER
SPECIAL FEATURES: ESD;HCI. SELECTED FROM P/N 49956 G293516-2. MFG P/N 0EU86 VTS
STORAGE TEMP RANGE: -60.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 24 BEAM LEAD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
G494565-259
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013638118
NSN
5962-01-363-8118
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CASE OUTLINE SOURCE AND DESIGNATOR: F-9 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 LATCH, D
FEATURES PROVIDED: HIGH SPEED AND HERMETICALLY SEALED AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 0.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MCKT DIGITAL-HIGH SPEED CMOS,OCTAL D-TYPE LATCH,OCTAL
SPECIAL FEATURES: ESD;HCI. SELECTED FROM P/N 49956G431350-2. MFG 61772 IDT54AHCT373EB
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 20 BEAM LEAD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
G494565-120
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013638119
NSN
5962-01-363-8119
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 RECEIVER, ASYNCHRONOUS AND 1 TRANSMITTER
FEATURES PROVIDED: ASYNCHRONOUS AND SYNCHRONOUS AND MONOLITHIC AND HERMETICALLY SEALED AND RADIATION HARDENED
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 32.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MCKT DIGITAL-LSI USART,CMOS
SPECIAL FEATURES: ESD;HCI. SCREENED FROM P/N 49956G307188-2. MFG P/N 49956 RB296048AABM
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 42 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY
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102976-001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638122
NSN
5962-01-363-8122
MFG
PRINTRONIX INC.
Description
FEATURES PROVIDED: BURN IN AND PROGRAMMED
MEMORY DEVICE TYPE: RAM
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2114L3
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638122
NSN
5962-01-363-8122
MFG
INTEL CORP SALES OFFICE
Description
FEATURES PROVIDED: BURN IN AND PROGRAMMED
MEMORY DEVICE TYPE: RAM
Related Searches:
107635-001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638123
NSN
5962-01-363-8123
MFG
PRINTRONIX INC.
Description
FEATURES PROVIDED: BURN IN AND PROGRAMMED
MEMORY DEVICE TYPE: PROM
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638123
NSN
5962-01-363-8123
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: BURN IN AND PROGRAMMED
MEMORY DEVICE TYPE: PROM
Related Searches:
979726-121
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638124
NSN
5962-01-363-8124
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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DM54S573AJ
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638124
NSN
5962-01-363-8124
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638124
NSN
5962-01-363-8124
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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ROM/PROM FAMILY 202
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638124
NSN
5962-01-363-8124
ROM/PROM FAMILY 202
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638124
NSN
5962-01-363-8124
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MBM27C32-30
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638126
NSN
5962-01-363-8126
MFG
FUJITSU MICROELECTRONICS INC.
Description
FEATURES PROVIDED: BURN IN AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 14 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.75 VOLTS MINIMUM POWER SOURCE AND 5.25 VOLTS MAXIMUM POWER SOURCE
Related Searches:
63A133454P121
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638445
NSN
5962-01-363-8445
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
MICROCIRCUIT,MEMORY
Related Searches:
63A146952P9
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638445
NSN
5962-01-363-8445
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
MICROCIRCUIT,MEMORY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638445
NSN
5962-01-363-8445
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
63A133454P121
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638446
NSN
5962-01-363-8446
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
MICROCIRCUIT,MEMORY
Related Searches:
63A146952P10
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638446
NSN
5962-01-363-8446
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
MICROCIRCUIT,MEMORY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013638446
NSN
5962-01-363-8446
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY