My Quote Request
5962-01-369-9725
20 Products
IDT6116SA70DB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013699725
NSN
5962-01-369-9725
MFG
INTEGRATED DEVICE TECHNOLOGY INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 8403613JA
FEATURES PROVIDED: BURN IN AND STATIC OPERATION AND W/ENABLE AND SYNCHRONOUS AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 84036
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
8403613JB
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013699725
NSN
5962-01-369-9725
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 8403613JA
FEATURES PROVIDED: BURN IN AND STATIC OPERATION AND W/ENABLE AND SYNCHRONOUS AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 84036
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
8403613JX
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013699725
NSN
5962-01-369-9725
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM SUPPLY
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 8403613JA
FEATURES PROVIDED: BURN IN AND STATIC OPERATION AND W/ENABLE AND SYNCHRONOUS AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 67268
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 84036
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1219254-206
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013699727
NSN
5962-01-369-9727
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM STAND-BY
DEPARTURE FROM CITED DESIGNATOR: ALTERED BY PROGRAMMING,MARKING & TESTING
FEATURES PROVIDED: PROGRAMMED AND ULTRAVIOLET ERASABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: AN/FPS-124
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
NONDEFINITIVE SPEC/STD DATA: 01 TYPE AND B CLASS AND Y CASE AND A FINISH AND 206 NUMBER
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL-NITRIDE-OXIDE SEMICONDUCTOR
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL,262,144 BIT MOS,ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM),MONOLITHIC SILICON
SPECIFICATION/STANDARD DATA: 81349-M38510/224 GOVERNMENT SPECIFICATION AND 56232-1219254 MANUFACTURERS SOURCE CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM TOTAL SUPPLY AND 6.25 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
M38510/22401BYA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013699727
NSN
5962-01-369-9727
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM STAND-BY
DEPARTURE FROM CITED DESIGNATOR: ALTERED BY PROGRAMMING,MARKING & TESTING
FEATURES PROVIDED: PROGRAMMED AND ULTRAVIOLET ERASABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: AN/FPS-124
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
NONDEFINITIVE SPEC/STD DATA: 01 TYPE AND B CLASS AND Y CASE AND A FINISH AND 206 NUMBER
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL-NITRIDE-OXIDE SEMICONDUCTOR
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL,262,144 BIT MOS,ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM),MONOLITHIC SILICON
SPECIFICATION/STANDARD DATA: 81349-M38510/224 GOVERNMENT SPECIFICATION AND 56232-1219254 MANUFACTURERS SOURCE CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM TOTAL SUPPLY AND 6.25 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013699727
NSN
5962-01-369-9727
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM STAND-BY
DEPARTURE FROM CITED DESIGNATOR: ALTERED BY PROGRAMMING,MARKING & TESTING
FEATURES PROVIDED: PROGRAMMED AND ULTRAVIOLET ERASABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: AN/FPS-124
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
NONDEFINITIVE SPEC/STD DATA: 01 TYPE AND B CLASS AND Y CASE AND A FINISH AND 206 NUMBER
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL-NITRIDE-OXIDE SEMICONDUCTOR
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL,262,144 BIT MOS,ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM),MONOLITHIC SILICON
SPECIFICATION/STANDARD DATA: 81349-M38510/224 GOVERNMENT SPECIFICATION AND 56232-1219254 MANUFACTURERS SOURCE CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM TOTAL SUPPLY AND 6.25 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
1219254-203
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013699728
NSN
5962-01-369-9728
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM STAND-BY
DEPARTURE FROM CITED DESIGNATOR: ALTERED BY PROGRAMMING,MARKING & TESTING
FEATURES PROVIDED: PROGRAMMED AND ULTRAVIOLET ERASABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: AN/FPS-124
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
NONDEFINITIVE SPEC/STD DATA: 01 TYPE AND B CLASS AND Y CASE AND A FINISH AND 203 NUMBER
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL-NITRIDE-OXIDE SEMICONDUCTOR
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL,262,144 BIT MOS,ULIRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM),MONOLITHIC SILICON
SPECIFICATION/STANDARD DATA: 81349-M38510/244 GOVERNMENT SPECIFICATION AND 56232-1219254 MANUFACTURERS SOURCE CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM TOTAL SUPPLY AND 6.25 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
M38510/22401BYA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013699728
NSN
5962-01-369-9728
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM STAND-BY
DEPARTURE FROM CITED DESIGNATOR: ALTERED BY PROGRAMMING,MARKING & TESTING
FEATURES PROVIDED: PROGRAMMED AND ULTRAVIOLET ERASABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: AN/FPS-124
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
NONDEFINITIVE SPEC/STD DATA: 01 TYPE AND B CLASS AND Y CASE AND A FINISH AND 203 NUMBER
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL-NITRIDE-OXIDE SEMICONDUCTOR
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL,262,144 BIT MOS,ULIRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM),MONOLITHIC SILICON
SPECIFICATION/STANDARD DATA: 81349-M38510/244 GOVERNMENT SPECIFICATION AND 56232-1219254 MANUFACTURERS SOURCE CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM TOTAL SUPPLY AND 6.25 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013699728
NSN
5962-01-369-9728
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM STAND-BY
DEPARTURE FROM CITED DESIGNATOR: ALTERED BY PROGRAMMING,MARKING & TESTING
FEATURES PROVIDED: PROGRAMMED AND ULTRAVIOLET ERASABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: AN/FPS-124
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
NONDEFINITIVE SPEC/STD DATA: 01 TYPE AND B CLASS AND Y CASE AND A FINISH AND 203 NUMBER
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL-NITRIDE-OXIDE SEMICONDUCTOR
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL,262,144 BIT MOS,ULIRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM),MONOLITHIC SILICON
SPECIFICATION/STANDARD DATA: 81349-M38510/244 GOVERNMENT SPECIFICATION AND 56232-1219254 MANUFACTURERS SOURCE CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM TOTAL SUPPLY AND 6.25 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
1219254-204
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013699729
NSN
5962-01-369-9729
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM STAND-BY
DEPARTURE FROM CITED DESIGNATOR: ALTERED BY PROGRAMMING,MARKING & TESTING
FEATURES PROVIDED: PROGRAMMED AND ULTRAVIOLET ERASABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: AN/FPS-124
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
NONDEFINITIVE SPEC/STD DATA: 01 TYPE AND B CLASS AND Y CASE AND A FINISH AND 204 NUMBER
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL-NITRIDE-OXIDE SEMICONDUCTOR
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL,262,144 BIT MOS,ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM),MONOLITHIC SILICON
SPECIFICATION/STANDARD DATA: 81349-M38510/224 GOVERNMENT SPECIFICATION AND 56232-1219254 MANUFACTURERS SOURCE CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM TOTAL SUPPLY AND 6.25 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
M38510/22401BYA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013699729
NSN
5962-01-369-9729
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM STAND-BY
DEPARTURE FROM CITED DESIGNATOR: ALTERED BY PROGRAMMING,MARKING & TESTING
FEATURES PROVIDED: PROGRAMMED AND ULTRAVIOLET ERASABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: AN/FPS-124
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
NONDEFINITIVE SPEC/STD DATA: 01 TYPE AND B CLASS AND Y CASE AND A FINISH AND 204 NUMBER
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL-NITRIDE-OXIDE SEMICONDUCTOR
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL,262,144 BIT MOS,ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM),MONOLITHIC SILICON
SPECIFICATION/STANDARD DATA: 81349-M38510/224 GOVERNMENT SPECIFICATION AND 56232-1219254 MANUFACTURERS SOURCE CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM TOTAL SUPPLY AND 6.25 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013699729
NSN
5962-01-369-9729
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CAPITANCE RATING PER CHARACTERISTIC: 6.00 INPUT PICOFARADS MAXIMUM AND 12.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM STAND-BY
DEPARTURE FROM CITED DESIGNATOR: ALTERED BY PROGRAMMING,MARKING & TESTING
FEATURES PROVIDED: PROGRAMMED AND ULTRAVIOLET ERASABLE
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: AN/FPS-124
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: EPROM
NONDEFINITIVE SPEC/STD DATA: 01 TYPE AND B CLASS AND Y CASE AND A FINISH AND 204 NUMBER
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL-NITRIDE-OXIDE SEMICONDUCTOR
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL,262,144 BIT MOS,ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM),MONOLITHIC SILICON
SPECIFICATION/STANDARD DATA: 81349-M38510/224 GOVERNMENT SPECIFICATION AND 56232-1219254 MANUFACTURERS SOURCE CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION AND 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.6 VOLTS MINIMUM TOTAL SUPPLY AND 6.25 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
5074060-30
VIDEO PROCESSOR
NSN, MFG P/N
5962013699969
NSN
5962-01-369-9969
MFG
RAYTHEON COMPANY
Description
VIDEO PROCESSOR
Related Searches:
5074020-2
DIA DISPLAY INTERFA
NSN, MFG P/N
5962013699970
NSN
5962-01-369-9970
MFG
RAYTHEON COMPANY
Description
DIA DISPLAY INTERFA
Related Searches:
5074080-1
INTERFACE VCR
NSN, MFG P/N
5962013699971
NSN
5962-01-369-9971
MFG
RAYTHEON COMPANY
Description
INTERFACE VCR
Related Searches:
5084500-15
VIDEO FORMATTER
NSN, MFG P/N
5962013699972
NSN
5962-01-369-9972
MFG
RAYTHEON COMPANY
Description
VIDEO FORMATTER
Related Searches:
8507006-116
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013700311
NSN
5962-01-370-0311
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
FEATURES PROVIDED: PROGRAMMABLE AND ELECTROSTATIC SENSITIVE
MEMORY DEVICE TYPE: PAL
Related Searches:
8514390-100
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013700311
NSN
5962-01-370-0311
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
FEATURES PROVIDED: PROGRAMMABLE AND ELECTROSTATIC SENSITIVE
MEMORY DEVICE TYPE: PAL
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013700311
NSN
5962-01-370-0311
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: PROGRAMMABLE AND ELECTROSTATIC SENSITIVE
MEMORY DEVICE TYPE: PAL
Related Searches:
G258913-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013700376
NSN
5962-01-370-0376
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE
MEMORY DEVICE TYPE: PAL