My Quote Request
5962-01-370-5837
20 Products
AM9513DM
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013705837
NSN
5962-01-370-5837
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
167902-05
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705498
NSN
5962-01-370-5498
MFG
GE AVIATION SYSTEMS LLC
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
168545-07
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705498
NSN
5962-01-370-5498
MFG
GE AVIATION SYSTEMS LLC
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/50410B2A
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705498
NSN
5962-01-370-5498
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705498
NSN
5962-01-370-5498
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
167670-05
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705499
NSN
5962-01-370-5499
MFG
GE AVIATION SYSTEMS LLC
Description
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
168541-06
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705499
NSN
5962-01-370-5499
MFG
GE AVIATION SYSTEMS LLC
Description
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
580128
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705499
NSN
5962-01-370-5499
MFG
GE AVIATION SYSTEMS LLC
Description
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/50407B2A
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705499
NSN
5962-01-370-5499
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705499
NSN
5962-01-370-5499
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
170217-04
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705500
NSN
5962-01-370-5500
MFG
GE AVIATION SYSTEMS LLC
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CASE OUTLINE SOURCE AND DESIGNATOR: C-12 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-8606302YA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705500
NSN
5962-01-370-5500
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CASE OUTLINE SOURCE AND DESIGNATOR: C-12 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705500
NSN
5962-01-370-5500
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 262144
CASE OUTLINE SOURCE AND DESIGNATOR: C-12 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 32 LEADLESS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
6135425-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705501
NSN
5962-01-370-5501
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 8.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM APPLIED AND 10.00 MILLIAMPERES MAXIMUM STAND-BY AND -400.00 MILLIAMPERES MAXIMUM OUTPUT
DEPARTURE FROM CITED DESIGNATOR: MODIFIED=PACKAGE/LOT SCREENING/BURN-IN
DEPARTURE FROM CITED DOCUMENT: PACKAGE=DIMENSION L1 SHALL BE .165 MIN.
FEATURES PROVIDED: DYNAMIC
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: SSRADAR E/I FSCM 56232
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,MEMORY-262144 X 1 BIT DYNAMIC RANDOM ACCESS MEMORY (RAM)
SPECIFICATION/STANDARD DATA: 03640-6135425-1 MANUFACTURERS SPECIFICATION CONTROL AND 03640-6009704 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MINIMUM READ-WRITE CYCLE AND 150.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
MB81257
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705501
NSN
5962-01-370-5501
MFG
FUJITSU COMPONENT OF AMERICA INC
Description
(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 8.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM APPLIED AND 10.00 MILLIAMPERES MAXIMUM STAND-BY AND -400.00 MILLIAMPERES MAXIMUM OUTPUT
DEPARTURE FROM CITED DESIGNATOR: MODIFIED=PACKAGE/LOT SCREENING/BURN-IN
DEPARTURE FROM CITED DOCUMENT: PACKAGE=DIMENSION L1 SHALL BE .165 MIN.
FEATURES PROVIDED: DYNAMIC
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: SSRADAR E/I FSCM 56232
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,MEMORY-262144 X 1 BIT DYNAMIC RANDOM ACCESS MEMORY (RAM)
SPECIFICATION/STANDARD DATA: 03640-6135425-1 MANUFACTURERS SPECIFICATION CONTROL AND 03640-6009704 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MINIMUM READ-WRITE CYCLE AND 150.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
MPM10795JD
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705501
NSN
5962-01-370-5501
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 8.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM APPLIED AND 10.00 MILLIAMPERES MAXIMUM STAND-BY AND -400.00 MILLIAMPERES MAXIMUM OUTPUT
DEPARTURE FROM CITED DESIGNATOR: MODIFIED=PACKAGE/LOT SCREENING/BURN-IN
DEPARTURE FROM CITED DOCUMENT: PACKAGE=DIMENSION L1 SHALL BE .165 MIN.
FEATURES PROVIDED: DYNAMIC
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: SSRADAR E/I FSCM 56232
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,MEMORY-262144 X 1 BIT DYNAMIC RANDOM ACCESS MEMORY (RAM)
SPECIFICATION/STANDARD DATA: 03640-6135425-1 MANUFACTURERS SPECIFICATION CONTROL AND 03640-6009704 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MINIMUM READ-WRITE CYCLE AND 150.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
SMJ4256
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705501
NSN
5962-01-370-5501
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 8.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM APPLIED AND 10.00 MILLIAMPERES MAXIMUM STAND-BY AND -400.00 MILLIAMPERES MAXIMUM OUTPUT
DEPARTURE FROM CITED DESIGNATOR: MODIFIED=PACKAGE/LOT SCREENING/BURN-IN
DEPARTURE FROM CITED DOCUMENT: PACKAGE=DIMENSION L1 SHALL BE .165 MIN.
FEATURES PROVIDED: DYNAMIC
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: SSRADAR E/I FSCM 56232
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,MEMORY-262144 X 1 BIT DYNAMIC RANDOM ACCESS MEMORY (RAM)
SPECIFICATION/STANDARD DATA: 03640-6135425-1 MANUFACTURERS SPECIFICATION CONTROL AND 03640-6009704 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MINIMUM READ-WRITE CYCLE AND 150.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
TMS4256
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962013705501
NSN
5962-01-370-5501
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 262144
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CAPITANCE RATING PER CHARACTERISTIC: 8.00 INPUT PICOFARADS MAXIMUM AND 8.00 OUTPUT PICOFARADS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM APPLIED AND 10.00 MILLIAMPERES MAXIMUM STAND-BY AND -400.00 MILLIAMPERES MAXIMUM OUTPUT
DEPARTURE FROM CITED DESIGNATOR: MODIFIED=PACKAGE/LOT SCREENING/BURN-IN
DEPARTURE FROM CITED DOCUMENT: PACKAGE=DIMENSION L1 SHALL BE .165 MIN.
FEATURES PROVIDED: DYNAMIC
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: SSRADAR E/I FSCM 56232
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,MEMORY-262144 X 1 BIT DYNAMIC RANDOM ACCESS MEMORY (RAM)
SPECIFICATION/STANDARD DATA: 03640-6135425-1 MANUFACTURERS SPECIFICATION CONTROL AND 03640-6009704 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MINIMUM READ-WRITE CYCLE AND 150.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM TOTAL SUPPLY AND 7.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
60710416-009
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013705694
NSN
5962-01-370-5694
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DIV LASER SYSTEMS
Description
III END ITEM IDENTIFICATION: OH-58D ARMY HELICOPTER IMPROVEMENT PROGRAM (AHIP) ROTARY WING AIRCRAFT
Related Searches:
11469102
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962013705695
NSN
5962-01-370-5695
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT