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5962-01-371-7579

20 Products

54HC541/BRAJC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013717579

NSN

5962-01-371-7579

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54HC541/BRAJC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013717579

NSN

5962-01-371-7579

MFG

FREESCALE SEMICONDUCTOR INC.

M38510/50402BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717029

NSN

5962-01-371-7029

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M38510/50402BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717029

NSN

5962-01-371-7029

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND PROGRAMMED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

53201-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717030

NSN

5962-01-371-7030

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53201-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717030

NSN

5962-01-371-7030

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND PROGRAMMED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/50401BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717030

NSN

5962-01-371-7030

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M38510/50401BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717030

NSN

5962-01-371-7030

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND PROGRAMMED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

53197-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717031

NSN

5962-01-371-7031

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53197-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717031

NSN

5962-01-371-7031

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND PROGRAMMED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510/50401BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717031

NSN

5962-01-371-7031

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M38510/50401BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717031

NSN

5962-01-371-7031

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND PROGRAMMED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

51681-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717032

NSN

5962-01-371-7032

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51681-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717032

NSN

5962-01-371-7032

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510-50404BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717032

NSN

5962-01-371-7032

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M38510-50404BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717032

NSN

5962-01-371-7032

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 059

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717032

NSN

5962-01-371-7032

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ROM/PROM FAMILY 059

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717032

NSN

5962-01-371-7032

MFG

DLA LAND AND MARITIME

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

51682-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717033

NSN

5962-01-371-7033

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51682-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717033

NSN

5962-01-371-7033

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

51682-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717033

NSN

5962-01-371-7033

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51682-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717033

NSN

5962-01-371-7033

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

M38510-50404BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717033

NSN

5962-01-371-7033

View More Info

M38510-50404BRA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717033

NSN

5962-01-371-7033

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

52515-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717034

NSN

5962-01-371-7034

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52515-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717034

NSN

5962-01-371-7034

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

722959-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717034

NSN

5962-01-371-7034

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722959-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717034

NSN

5962-01-371-7034

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

D27128-25

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717034

NSN

5962-01-371-7034

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D27128-25

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717034

NSN

5962-01-371-7034

MFG

INTEL CORP SALES OFFICE

Description

(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 091

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717034

NSN

5962-01-371-7034

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ROM/PROM FAMILY 091

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717034

NSN

5962-01-371-7034

MFG

DEFENSE ELECTRONICS SUPPLY CENTER

Description

(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

52517-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717035

NSN

5962-01-371-7035

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52517-1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717035

NSN

5962-01-371-7035

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717035

NSN

5962-01-371-7035

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013717035

NSN

5962-01-371-7035

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 131072
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 17 INPUT
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

0N225117-14

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013717577

NSN

5962-01-371-7577

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0N225117-14

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013717577

NSN

5962-01-371-7577

MFG

NATIONAL SECURITY AGENCY

0N225130-99

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013717578

NSN

5962-01-371-7578

View More Info

0N225130-99

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013717578

NSN

5962-01-371-7578

MFG

NATIONAL SECURITY AGENCY