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5962-01-389-7020

20 Products

WS57C256F-70DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897020

NSN

5962-01-389-7020

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WS57C256F-70DMB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897020

NSN

5962-01-389-7020

MFG

WAFERSCALE INTEGRATION INC

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 4.40 MILLIMETERS MAXIMUM
BODY LENGTH: 37.85 MILLIMETERS MAXIMUM
BODY WIDTH: 12.70 MILLIMETERS MINIMUM AND 15.49 MILLIMETERS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM INPUT DRIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8606308XA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 67268
MEMORY DEVICE TYPE: EPROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-86063
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 14.0 VOLTS NOMINAL TOTAL SUPPLY

AT27HC256R-70DM/883

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897020

NSN

5962-01-389-7020

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AT27HC256R-70DM/883

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897020

NSN

5962-01-389-7020

MFG

ATMEL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 4.40 MILLIMETERS MAXIMUM
BODY LENGTH: 37.85 MILLIMETERS MAXIMUM
BODY WIDTH: 12.70 MILLIMETERS MINIMUM AND 15.49 MILLIMETERS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM INPUT DRIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8606308XA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 67268
MEMORY DEVICE TYPE: EPROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-86063
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 14.0 VOLTS NOMINAL TOTAL SUPPLY

ROM/PROM HEAD 199

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897020

NSN

5962-01-389-7020

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ROM/PROM HEAD 199

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897020

NSN

5962-01-389-7020

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 262144
(NON-CORE DATA) WORD QUANTITY: 32768
BODY HEIGHT: 4.40 MILLIMETERS MAXIMUM
BODY LENGTH: 37.85 MILLIMETERS MAXIMUM
BODY WIDTH: 12.70 MILLIMETERS MINIMUM AND 15.49 MILLIMETERS MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-10 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 90.00 MILLIAMPERES MAXIMUM INPUT DRIVE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-8606308XA
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND PROGRAMMED AND ULTRAVIOLET ERASABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 67268
MEMORY DEVICE TYPE: EPROM
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-86063
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM INPUT TO OUTPUT ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 14.0 VOLTS NOMINAL TOTAL SUPPLY

8200801JA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897048

NSN

5962-01-389-7048

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8200801JA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897048

NSN

5962-01-389-7048

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 32768
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: PROGRAMMED AND BIPOLAR AND SCHOTTKY
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED ON: AN/ALQ-119A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 32K PROM
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 95.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM ABSOLUTE INPUT

82008A1JA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897048

NSN

5962-01-389-7048

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82008A1JA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897048

NSN

5962-01-389-7048

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 32768
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: PROGRAMMED AND BIPOLAR AND SCHOTTKY
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED ON: AN/ALQ-119A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 32K PROM
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 95.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM ABSOLUTE INPUT

82008B1JA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897048

NSN

5962-01-389-7048

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82008B1JA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897048

NSN

5962-01-389-7048

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 32768
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: PROGRAMMED AND BIPOLAR AND SCHOTTKY
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED ON: AN/ALQ-119A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 32K PROM
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 95.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM ABSOLUTE INPUT

82008F1JA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897048

NSN

5962-01-389-7048

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82008F1JA

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897048

NSN

5962-01-389-7048

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

(NON-CORE DATA) BIT QUANTITY: 32768
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: PROGRAMMED AND BIPOLAR AND SCHOTTKY
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED ON: AN/ALQ-119A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 32K PROM
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 95.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM ABSOLUTE INPUT

G258801-108

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897048

NSN

5962-01-389-7048

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G258801-108

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897048

NSN

5962-01-389-7048

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32768
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: PROGRAMMED AND BIPOLAR AND SCHOTTKY
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED ON: AN/ALQ-119A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 32K PROM
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 95.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM ABSOLUTE INPUT

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897048

NSN

5962-01-389-7048

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897048

NSN

5962-01-389-7048

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 32768
CASE OUTLINE SOURCE AND DESIGNATOR: D-3 MIL-M-38510
FEATURES PROVIDED: PROGRAMMED AND BIPOLAR AND SCHOTTKY
HYBRID TECHNOLOGY TYPE: MONOLITHIC
III END ITEM IDENTIFICATION: USED ON: AN/ALQ-119A
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 32K PROM
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 95.00 NANOSECONDS NOMINAL ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM ABSOLUTE INPUT

100-00866

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897050

NSN

5962-01-389-7050

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100-00866

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897050

NSN

5962-01-389-7050

MFG

DATA GENERAL CORP SPECIAL SYSTEMS GROUP

100-008664

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897050

NSN

5962-01-389-7050

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100-008664

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897050

NSN

5962-01-389-7050

MFG

DATA GENERAL CORP SPECIAL SYSTEMS GROUP

291811-116

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897050

NSN

5962-01-389-7050

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291811-116

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897050

NSN

5962-01-389-7050

MFG

DATAPRODUCTS CORP

515C9630-04-120

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897052

NSN

5962-01-389-7052

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515C9630-04-120

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013897052

NSN

5962-01-389-7052

MFG

GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN

A584A411-103

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897057

NSN

5962-01-389-7057

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A584A411-103

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897057

NSN

5962-01-389-7057

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER/DEMULTIPLEXER, ANALOG
INCLOSURE CONFIGURATION: FLAT PACK
MANUFACTURERS CODE: 88818
MFR SOURCE CONTROLLING REFERENCE: A584A411-103
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 100 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

G25L005-103

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897057

NSN

5962-01-389-7057

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G25L005-103

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897057

NSN

5962-01-389-7057

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER/DEMULTIPLEXER, ANALOG
INCLOSURE CONFIGURATION: FLAT PACK
MANUFACTURERS CODE: 88818
MFR SOURCE CONTROLLING REFERENCE: A584A411-103
OPERATING TEMP RANGE: -55.0 TO 110.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 100 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

DSP56001-FE27

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897067

NSN

5962-01-389-7067

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DSP56001-FE27

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897067

NSN

5962-01-389-7067

MFG

FREESCALE SEMICONDUCTOR INC.

G492096-341

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013897071

NSN

5962-01-389-7071

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G492096-341

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013897071

NSN

5962-01-389-7071

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

300674

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013897072

NSN

5962-01-389-7072

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300674

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013897072

NSN

5962-01-389-7072

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION

VQ1000P-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013897072

NSN

5962-01-389-7072

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VQ1000P-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962013897072

NSN

5962-01-389-7072

MFG

SILICONIX INCORPORATED D IV SILICONIX

IDT54FCT861BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897075

NSN

5962-01-389-7075

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IDT54FCT861BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013897075

NSN

5962-01-389-7075

MFG

INTEGRATED DEVICE TECHNOLOGY INC

Description

DESIGN FUNCTION AND QUANTITY: 1 TRANSCEIVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 4.5 VOLTS MINIMUM APPLIED AND 5.5 VOLTS MAXIMUM APPLIED