My Quote Request
5962-01-413-1628
20 Products
6088790-7
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014131628
NSN
5962-01-413-1628
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
DESIGN FUNCTION AND QUANTITY: 1 DECODER, THREE TO EIGHT LINE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
Related Searches:
12931484
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014131535
NSN
5962-01-413-1535
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
DESIGN CONTROL REFERENCE: 12931484
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: USED ON M1A2 TANK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 19200
MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ALTERED ITEM DRAWING
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS NOMINAL POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
12931062
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014131536
NSN
5962-01-413-1536
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
(NON-CORE DATA) BIT QUANTITY: 8196
DESIGN CONTROL REFERENCE: 12931062
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: USED ON M1A2 TANK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 19200
MEMORY DEVICE TYPE: PROM
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ALTERED ITEM DRAWING
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS NOMINAL POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
12931064
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014131537
NSN
5962-01-413-1537
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
(NON-CORE DATA) BIT QUANTITY: 1024
DESIGN CONTROL REFERENCE: 12931064
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: USED ON M1A2 TANK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 19200
MEMORY DEVICE TYPE: PROM
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ALTERED ITEM DRAWING
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
12931066
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014131538
NSN
5962-01-413-1538
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
(NON-CORE DATA) BIT QUANTITY: 8196
DESIGN CONTROL REFERENCE: 12931066
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: USED ON M1A2 TANK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 19200
MEMORY DEVICE TYPE: PROM
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ALTERED ITEM DRAWING
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS NOMINAL POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
12931476
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014131539
NSN
5962-01-413-1539
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
DESIGN CONTROL REFERENCE: 12931476
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: USED ON M1A2 TANK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 19200
MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ALTERED ITEM DRAWING
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS NOMINAL POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
12931481
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014131541
NSN
5962-01-413-1541
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
DESIGN CONTROL REFERENCE: 12931481
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: USED ON M1A2 TANK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 19200
MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS NOMINAL POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
12931482
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014131542
NSN
5962-01-413-1542
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
DESIGN CONTROL REFERENCE: 12931482
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: USED ON M1A2 TANK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 19200
MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ALTERED ITEM ITEM
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS NOMINAL POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
12931474
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014131544
NSN
5962-01-413-1544
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
DESIGN CONTROL REFERENCE: 12931474
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: USED ON M1A2 TANK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 19200
MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ALTERED ITEM DRAWING
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS NOMINAL POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
12931475
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014131545
NSN
5962-01-413-1545
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
DESIGN CONTROL REFERENCE: 12931475
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: USED ON M1A2 TANK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 19200
MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ALTERED ITEM DRAWING
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS NOMINAL POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
12931473
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014131546
NSN
5962-01-413-1546
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
DESIGN CONTROL REFERENCE: 12931473
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: USED ON M1A2 TANK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 19200
MEMORY DEVICE TYPE: PAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ALTERED ITEM DRAWING
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS NOMINAL POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-90595
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014131586
NSN
5962-01-413-1586
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-9059506GA
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
MANUFACTURERS CODE: 67268
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-90595
SPEC/STD CONTROLLING DATA:
Related Searches:
5962-9059506GA
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014131586
NSN
5962-01-413-1586
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP DOCUMENT CONTROL UNIT
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-9059506GA
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
MANUFACTURERS CODE: 67268
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 5962-90595
SPEC/STD CONTROLLING DATA:
Related Searches:
725005-365
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014131587
NSN
5962-01-413-1587
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
Related Searches:
CY10E474L-5DMB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014131587
NSN
5962-01-413-1587
MFG
CYPRESS SEMICONDUCTOR CORPORATION
Description
MICROCIRCUIT,DIGITAL
Related Searches:
100-1212-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014131590
NSN
5962-01-413-1590
MFG
SUN MICROSYSTEMS INC
Description
MICROCIRCUIT,DIGITAL
Related Searches:
100-1166-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014131592
NSN
5962-01-413-1592
MFG
SUN MICROSYSTEMS INC
Description
MICROCIRCUIT,DIGITAL
Related Searches:
520-8037-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014131597
NSN
5962-01-413-1597
MFG
SUN MICROSYSTEMS INC
Description
MICROCIRCUIT,DIGITAL
Related Searches:
520-8038-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014131599
NSN
5962-01-413-1599
MFG
SUN MICROSYSTEMS INC
Description
MICROCIRCUIT,DIGITAL
Related Searches:
477-2089-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014131624
NSN
5962-01-413-1624
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE