My Quote Request
5962-01-434-4562
20 Products
PL 520D01003001/60
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014344562
NSN
5962-01-434-4562
PL 520D01003001/60
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014344562
NSN
5962-01-434-4562
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 24 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
PL520D01003001 ITEM42
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014344106
NSN
5962-01-434-4106
PL520D01003001 ITEM42
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014344106
NSN
5962-01-434-4106
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
DESIGN FUNCTION AND QUANTITY: 1 RECEIVER, LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
PL520D01003001/42
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014344106
NSN
5962-01-434-4106
PL520D01003001/42
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014344106
NSN
5962-01-434-4106
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
DESIGN FUNCTION AND QUANTITY: 1 RECEIVER, LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
SN55114J/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014344106
NSN
5962-01-434-4106
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 1 RECEIVER, LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
PL520D01003001 ITEM43
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014344107
NSN
5962-01-434-4107
PL520D01003001 ITEM43
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014344107
NSN
5962-01-434-4107
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
DESIGN FUNCTION AND QUANTITY: 1 RECEIVER, LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
PL520D01003001/43
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014344107
NSN
5962-01-434-4107
PL520D01003001/43
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014344107
NSN
5962-01-434-4107
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
DESIGN FUNCTION AND QUANTITY: 1 RECEIVER, LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
SN55115J/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014344107
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5962-01-434-4107
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 1 RECEIVER, LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
PL 520D01003001 ITEM 64
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014344108
NSN
5962-01-434-4108
PL 520D01003001 ITEM 64
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014344108
NSN
5962-01-434-4108
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, PERIPHERAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
PL 520D01003001/64
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014344108
NSN
5962-01-434-4108
PL 520D01003001/64
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014344108
NSN
5962-01-434-4108
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, PERIPHERAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
SN55452BJG/883B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014344108
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5962-01-434-4108
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, PERIPHERAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
PL 520D01003001 ITEM 44
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014344109
NSN
5962-01-434-4109
PL 520D01003001 ITEM 44
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014344109
NSN
5962-01-434-4109
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, PERIPHERAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
PL 520D01003001/44
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014344109
NSN
5962-01-434-4109
PL 520D01003001/44
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014344109
NSN
5962-01-434-4109
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, PERIPHERAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
SN55451BJG/883B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014344109
NSN
5962-01-434-4109
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, PERIPHERAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
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8819-7165-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014344325
NSN
5962-01-434-4325
MFG
DRS ICAS, LLC
Description
III END ITEM IDENTIFICATION: AN/TPQ-45
Related Searches:
08-58-0111
TERMINAL,SPECIAL
NSN, MFG P/N
5962014344464
NSN
5962-01-434-4464
MFG
MOLEX INCORPORATED DBA MOLEX AUTOMOTIVE DIV MOLEX AUTOMOTIVE USE CAGE CODE 1UX99 FOR CATALOGING.
Description
III END ITEM IDENTIFICATION: RVR NEW GENERATIONS
Related Searches:
EP900IDM883/B-60
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014344561
NSN
5962-01-434-4561
MFG
ALTERA CORPORATION
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 40 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
PL 520D01003001 ITEM 59
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014344561
NSN
5962-01-434-4561
PL 520D01003001 ITEM 59
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014344561
NSN
5962-01-434-4561
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 40 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
PL 520D01003001/59
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014344561
NSN
5962-01-434-4561
PL 520D01003001/59
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014344561
NSN
5962-01-434-4561
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 40 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
EP600IDM883/B-55
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014344562
NSN
5962-01-434-4562
MFG
ALTERA CORPORATION
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 24 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
PL 520D01003001 ITEM 60
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014344562
NSN
5962-01-434-4562
PL 520D01003001 ITEM 60
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014344562
NSN
5962-01-434-4562
MFG
BAE SYSTEMS AUSTRALIA LTD C/O DLM SECURE ROOM
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MEMORY DEVICE TYPE: PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 24 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE

