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5962-01-473-7601
20 Products
348120-14
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737601
NSN
5962-01-473-7601
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
411303
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962014733402
NSN
5962-01-473-3402
MFG
TARGET CORPORATION DBA TARGET
Description
MICROCIRCUIT,HYBRID
Related Searches:
411303-3
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962014733402
NSN
5962-01-473-3402
MFG
TARGET CORPORATION DBA TARGET
Description
MICROCIRCUIT,HYBRID
Related Searches:
XDC14508-608
MICROCIRCUIT,HYBRID
NSN, MFG P/N
5962014733402
NSN
5962-01-473-3402
MFG
DATA DEVICE CORPORATION
Description
MICROCIRCUIT,HYBRID
Related Searches:
54AC138DMQB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014734284
NSN
5962-01-473-4284
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CASE OUTLINE SOURCE AND DESIGNATOR: D-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 DECODER
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: AC138 HIGH-SPEED 1-OF-8 DECODER/DEMULTIPLEXER
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-8762201EA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014734284
NSN
5962-01-473-4284
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CASE OUTLINE SOURCE AND DESIGNATOR: D-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 DECODER
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: AC138 HIGH-SPEED 1-OF-8 DECODER/DEMULTIPLEXER
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
TL062C
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014734327
NSN
5962-01-473-4327
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MICROCIRCUIT,LINEAR
Related Searches:
AD820AN
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962014735867
NSN
5962-01-473-5867
MFG
ANALOG DEVICES INC. DIV CORPORATE HEADQUARTERS
Description
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, LINEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: LOW POWER FET-INPUT OP AMP
TERMINAL TYPE AND QUANTITY: 8 PIN
Related Searches:
NM24C16N
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014735965
NSN
5962-01-473-5965
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 16384
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
SPECIAL FEATURES: THREE DIFFERENT TEMPERATURE RANGES AVAILABLE, (COMMERCIAL- 0 DEGREES TOPLUS 70 DEGREES CELCIUS, EXTENDED- MINUS 40 DEGREES CELCIUS TO PLUS 85 DEGREES CELCIUS, AUTOMOTIVE- MINUS 40 DEGREES CELCIUS TO PLUS 125 DEGREES CELCIUS)
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 2.7 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
NM24C02N
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014735966
NSN
5962-01-473-5966
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 16384
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
SPECIAL FEATURES: THREE DIFFERENT TEMPERATURE RANGES AVAILABLE, (COMMERCIAL- 0 DEGREE TO PLUS 70 DEGREES CELCIUS, MINUS 40 DEGREES TO PLUS 85 DEGREES CELCIUS EXTENDED AND AUTOMOTIVE IS MINUS 40 DEGREES TO PLUS 125 DEGREES CELCIUS).
TERMINAL TYPE AND QUANTITY: 2 WIRE LEAD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 2.7 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1050-501-03
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014737390
NSN
5962-01-473-7390
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
MICROCIRCUIT,DIGITAL
Related Searches:
M235A810
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014737390
NSN
5962-01-473-7390
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
MICROCIRCUIT,DIGITAL
Related Searches:
M235A810-3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014737390
NSN
5962-01-473-7390
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
MICROCIRCUIT,DIGITAL
Related Searches:
P758-2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962014737413
NSN
5962-01-473-7413
MFG
EFW INC.
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TRANSCEIVER, LINE DIFFERENTIAL
III END ITEM IDENTIFICATION: F-16 AIRCRAFT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, DIGITAL, LINE TRANSCEIVER, DIFFERENTIAL
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 2.9 VOLTS NOMINAL INPUT
Related Searches:
326511-9
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737583
NSN
5962-01-473-7583
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-10
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737596
NSN
5962-01-473-7596
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-12
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737597
NSN
5962-01-473-7597
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-11
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737598
NSN
5962-01-473-7598
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-13
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737599
NSN
5962-01-473-7599
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM
Related Searches:
348120-15
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962014737600
NSN
5962-01-473-7600
MFG
RAYTHEON COMPANY
Description
MEMORY DEVICE TYPE: EPROM