My Quote Request
5980-01-005-0295
20 Products
H21A1
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980010050295
NSN
5980-01-005-0295
MFG
INTERSIL CORPORATION
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: GALLIUM ARSENIDE SOLID STATE LAMPS COUPLED WITH SILICON PHOTO-TRANSISTOR IN A PLASTIC HOUSING,0.984 IN. MAX LG,0.250 IN. MAX W,0.400 IN. MAX H,FOUR TERMINALS
Related Searches:
2N1483
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009904693
NSN
5980-00-990-4693
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
NONDEFINITIVE SPEC/STD DATA: PE 2N1483-80131 TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
2558246-1
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009953744
NSN
5980-00-995-3744
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: CK2029
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 3B150
OVERALL DIAMETER: 0.615 INCHES MINIMUM AND 0.635 INCHES MAXIMUM
OVERALL LENGTH: 2.715 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 INSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
CK2029
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980009953744
NSN
5980-00-995-3744
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: CK2029
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 3B150
OVERALL DIAMETER: 0.615 INCHES MINIMUM AND 0.635 INCHES MAXIMUM
OVERALL LENGTH: 2.715 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 INSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
0P644
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010032927
NSN
5980-01-003-2927
MFG
OPTEK TECHNOLOGY INC
Description
DESIGN CONTROL REFERENCE: 0P644
MANUFACTURERS CODE: 32694
OVERALL HEIGHT: 0.115 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MAXIMUM
OVERALL WIDTH: 0.061 INCHES MAXIMUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:
Related Searches:
0P644SL
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010032927
NSN
5980-01-003-2927
MFG
OPTEK TECHNOLOGY INC
Description
DESIGN CONTROL REFERENCE: 0P644
MANUFACTURERS CODE: 32694
OVERALL HEIGHT: 0.115 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MAXIMUM
OVERALL WIDTH: 0.061 INCHES MAXIMUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:
Related Searches:
440017
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010032927
NSN
5980-01-003-2927
MFG
SYQWEST INC.
Description
DESIGN CONTROL REFERENCE: 0P644
MANUFACTURERS CODE: 32694
OVERALL HEIGHT: 0.115 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MAXIMUM
OVERALL WIDTH: 0.061 INCHES MAXIMUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:
Related Searches:
TIL604
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010032927
NSN
5980-01-003-2927
MFG
SPEC-TRONICS
Description
DESIGN CONTROL REFERENCE: 0P644
MANUFACTURERS CODE: 32694
OVERALL HEIGHT: 0.115 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MAXIMUM
OVERALL WIDTH: 0.061 INCHES MAXIMUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
THE MANUFACTURERS DATA:
Related Searches:
23201
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010035356
NSN
5980-01-003-5356
MFG
COMTEC INFORMATION SYSTEMS INC DIGITRONICS DIV
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
510244-003
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010035356
NSN
5980-01-003-5356
510244-003
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010035356
NSN
5980-01-003-5356
MFG
L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATION AVIATION RECORDERS DIVISION DIV L3 COMMUNICATIONS CORPORATION AVIATION RECORDERS DIVISION
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
TIL65
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010035356
NSN
5980-01-003-5356
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
036-89-00005
PHOTOELECTRIC CELL
NSN, MFG P/N
5980010036516
NSN
5980-01-003-6516
MFG
L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATION AVIATION RECORDERS DIVISION DIV L3 COMMUNICATIONS CORPORATION AVIATION RECORDERS DIVISION
Description
INCLOSURE MATERIAL: METAL
Related Searches:
499-020-036
PHOTOELECTRIC CELL
NSN, MFG P/N
5980010036516
NSN
5980-01-003-6516
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
INCLOSURE MATERIAL: METAL
Related Searches:
855874
PHOTOELECTRIC CELL
NSN, MFG P/N
5980010036516
NSN
5980-01-003-6516
MFG
L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATION AVIATION RECORDERS DIVISION DIV L3 COMMUNICATIONS CORPORATION AVIATION RECORDERS DIVISION
Description
INCLOSURE MATERIAL: METAL
Related Searches:
FCD 810
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980010040997
NSN
5980-01-004-0997
MFG
FAIRCHILD CAMERA AND INSTRUMENT CORP OPTOELECTRONICS DIV SUB OF SCHLUMBERGER LTD
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: 0.340 IN. LG MAX; 0.302 IN. H MAX; 6 PIN DUAL-IN-LINE PKG; COLLECTOR TO EMITTER 20.0 V; COLLECTOR TO BASE 50.0 V; DIODE REVERSE VOLTAGE 3.0
Related Searches:
353-0293-030
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010043567
NSN
5980-01-004-3567
353-0293-030
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980010043567
NSN
5980-01-004-3567
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 1.340 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
353-0293-040
LIGHT EMITTING DIODE
NSN, MFG P/N
5980010043568
NSN
5980-01-004-3568
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
LIGHT EMITTING DIODE
Related Searches:
MV5026
LIGHT EMITTING DIODE
NSN, MFG P/N
5980010043568
NSN
5980-01-004-3568
MFG
GENERAL INSTRUMENT CORP OPTOELECTRONICS DIV
Description
LIGHT EMITTING DIODE
Related Searches:
972105
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980010050295
NSN
5980-01-005-0295
MFG
DENTSPLY INTERNATIONAL INC. DBA DENTSPLY CAULK DIV CAULK DIVISION
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: GALLIUM ARSENIDE SOLID STATE LAMPS COUPLED WITH SILICON PHOTO-TRANSISTOR IN A PLASTIC HOUSING,0.984 IN. MAX LG,0.250 IN. MAX W,0.400 IN. MAX H,FOUR TERMINALS
Related Searches:
H13A2
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980010050295
NSN
5980-01-005-0295
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: GALLIUM ARSENIDE SOLID STATE LAMPS COUPLED WITH SILICON PHOTO-TRANSISTOR IN A PLASTIC HOUSING,0.984 IN. MAX LG,0.250 IN. MAX W,0.400 IN. MAX H,FOUR TERMINALS