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5980-01-227-4218
20 Products
MV53173I
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012274218
NSN
5980-01-227-4218
MFG
GENERAL INSTRUMENTS UK LTD
Description
LIGHT EMITTING DIODE
Related Searches:
74891-1209-1
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012261488
NSN
5980-01-226-1488
MFG
TELECOMMUNICATION SPECIALISTS INC
Description
LIGHT EMITTING DIODE
Related Searches:
74891-1209-3
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012261489
NSN
5980-01-226-1489
MFG
TELECOMMUNICATION SPECIALISTS INC
Description
LIGHT EMITTING DIODE
Related Searches:
MV5174
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012263118
NSN
5980-01-226-3118
MFG
GENERAL INSTRUMENT CORP OPTOELECTRONICS DIV
Description
LIGHT EMITTING DIODE
Related Searches:
652-005
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980012265299
NSN
5980-01-226-5299
MFG
RADIOSPARES SAS
Description
COUPLER,OPTOELECTRONIC
Related Searches:
HCPL 2300
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980012265299
NSN
5980-01-226-5299
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COUPLER,OPTOELECTRONIC
Related Searches:
HCPL-2300
COUPLER,OPTOELECTRONIC
NSN, MFG P/N
5980012265299
NSN
5980-01-226-5299
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
COUPLER,OPTOELECTRONIC
Related Searches:
8035*
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980012266956
NSN
5980-01-226-6956
MFG
GRASEBY ELECTRO-OPTICS INC GRASEBY INFRARED DIV
Description
INCLOSURE MATERIAL: METAL AND GLASS
INTERNAL CONFIGURATION: POINT CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
SD-4144
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980012266956
NSN
5980-01-226-6956
MFG
ADVANCED PHOTONIX INC.
Description
INCLOSURE MATERIAL: METAL AND GLASS
INTERNAL CONFIGURATION: POINT CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
L14BH17
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980012267669
NSN
5980-01-226-7669
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MINIMUM AND 0.228 INCHES MAXIMUM
OVERALL WIDTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
L14R1
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980012267669
NSN
5980-01-226-7669
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.220 INCHES MINIMUM AND 0.228 INCHES MAXIMUM
OVERALL WIDTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
883257
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012267826
NSN
5980-01-226-7826
MFG
NORTH ATLANTIC INDUSTRIES INC.
Description
COLOR TONE PRODUCED PER SOURCE: INFRARED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
OP160
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012267826
NSN
5980-01-226-7826
MFG
OPTEK TECHNOLOGY INC
Description
COLOR TONE PRODUCED PER SOURCE: INFRARED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
OP165D
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012267826
NSN
5980-01-226-7826
MFG
OPTEK TECHNOLOGY INC
Description
COLOR TONE PRODUCED PER SOURCE: INFRARED SEMICONDUCTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
1750R38FFFFFFFF
DISPLAY,OPTOELECTRONIC
NSN, MFG P/N
5980012269704
NSN
5980-01-226-9704
1750R38FFFFFFFF
DISPLAY,OPTOELECTRONIC
NSN, MFG P/N
5980012269704
NSN
5980-01-226-9704
MFG
INDUSTRIAL ELECTRONIC ENGINEERS INC. DBA IEE
Description
DISPLAY,OPTOELECTRONIC
Related Searches:
351-30649-001
DISPLAY,OPTOELECTRONIC
NSN, MFG P/N
5980012273860
NSN
5980-01-227-3860
MFG
EATON CORPORATION DBA AEROSPACE & COMMERCIAL DIV DIV SENSING & CONTROLS DIVISION
Description
DISPLAY,OPTOELECTRONIC
Related Searches:
559-2301-001
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012274217
NSN
5980-01-227-4217
MFG
DIALIGHT CORPORATION
Description
COLOR TONE PRODUCED PER SOURCE: YELLOW LENS
CURRENT RATING PER CHARACTERISTIC: 35.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
INCLOSURE MATERIAL: PLASTIC
LENS TRANSPARENCY: TRANSLUCENT
LUMINOUS INTENSITY: 3.0 MILLICANDELA NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.281 INCHES NOMINAL
OVERALL LENGTH: 0.625 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 105.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.2 NOMINAL FORWARD VOLTAGE, DC AND 5.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
261055
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012274218
NSN
5980-01-227-4218
MFG
ULTRA ELECTRONICS LIMITED
Description
LIGHT EMITTING DIODE
Related Searches:
5016065-003
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012274218
NSN
5980-01-227-4218
MFG
THALES TRAINING & SIMULATION LTD
Description
LIGHT EMITTING DIODE
Related Searches:
MV53173
LIGHT EMITTING DIODE
NSN, MFG P/N
5980012274218
NSN
5980-01-227-4218
MFG
GENERAL INSTRUMENT CORP OPTOELECTRONICS DIV
Description
LIGHT EMITTING DIODE