My Quote Request
5961-00-018-9321
20 Products
UM9105
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189321
NSN
5961-00-018-9321
MFG
MICRO USPD INC
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 80063-SM-A-696588 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
CA49137
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189274
NSN
5961-00-018-9274
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DT40511B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189274
NSN
5961-00-018-9274
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 3.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
TC150A100S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189274
NSN
5961-00-018-9274
TC150A100S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189274
NSN
5961-00-018-9274
MFG
MICRONETICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
196022P2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189275
NSN
5961-00-018-9275
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
CA49138
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189275
NSN
5961-00-018-9275
MFG
TELCOM SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
DT40511C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189275
NSN
5961-00-018-9275
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
TC105A100S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189275
NSN
5961-00-018-9275
TC105A100S
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189275
NSN
5961-00-018-9275
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 130.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
335-430
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189308
NSN
5961-00-018-9308
MFG
CMC ELECTRONICS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
AFC41
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189308
NSN
5961-00-018-9308
MFG
EASTRON CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MA4019G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189308
NSN
5961-00-018-9308
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
VS693
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189308
NSN
5961-00-018-9308
MFG
CRYSTALONICS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
335-433
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189309
NSN
5961-00-018-9309
MFG
CMC ELECTRONICS INC
Description
DESIGN CONTROL REFERENCE: 335-433
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 90073
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
334-341
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189318
NSN
5961-00-018-9318
MFG
CMC ELECTRONICS INC
Description
DESIGN CONTROL REFERENCE: 334-341
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 90073
OVERALL LENGTH: 1.253 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
299-800000-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189321
NSN
5961-00-018-9321
299-800000-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189321
NSN
5961-00-018-9321
MFG
CMC ELECTRONICS INC
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 80063-SM-A-696588 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
DSA5849-96
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189321
NSN
5961-00-018-9321
DSA5849-96
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189321
NSN
5961-00-018-9321
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 80063-SM-A-696588 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
M01054
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189321
NSN
5961-00-018-9321
MFG
SKYWORKS SOLUTIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 80063-SM-A-696588 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA47767
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189321
NSN
5961-00-018-9321
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 80063-SM-A-696588 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SM-A-696588
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189321
NSN
5961-00-018-9321
SM-A-696588
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189321
NSN
5961-00-018-9321
MFG
IN SPECK CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 80063-SM-A-696588 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
SM-A-696588-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189321
NSN
5961-00-018-9321
SM-A-696588-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000189321
NSN
5961-00-018-9321
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.250 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 80063-SM-A-696588 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC