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5961-00-079-3115
20 Products
PS8049
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000793115
NSN
5961-00-079-3115
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
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938D392-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000793115
NSN
5961-00-079-3115
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
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1N3350A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000793436
NSN
5961-00-079-3436
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 0.401 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3669 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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1-4M2-7AX5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000793935
NSN
5961-00-079-3935
1-4M2-7AX5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000793935
NSN
5961-00-079-3935
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 1-4M2-7AX5
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 04713
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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00005-1N21WEMR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000794041
NSN
5961-00-079-4041
00005-1N21WEMR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000794041
NSN
5961-00-079-4041
MFG
DLA LAND AND MARITIME OPNS SUPPORT GROUP STANDARDIZATION UNIT
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 00005-1N21WEMR
FEATURES PROVIDED: GOLD PLATED LEADS
FUNCTION FOR WHICH DESIGNED: MIXER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.222 INCHES MINIMUM AND 0.240 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/232 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
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SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000794041
NSN
5961-00-079-4041
3522 500 21347
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000794041
NSN
5961-00-079-4041
MFG
THALES NEDERLAND
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 00005-1N21WEMR
FEATURES PROVIDED: GOLD PLATED LEADS
FUNCTION FOR WHICH DESIGNED: MIXER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.222 INCHES MINIMUM AND 0.240 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/232 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
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SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000794041
NSN
5961-00-079-4041
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 00005-1N21WEMR
FEATURES PROVIDED: GOLD PLATED LEADS
FUNCTION FOR WHICH DESIGNED: MIXER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.222 INCHES MINIMUM AND 0.240 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/232 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
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UXAN1N21WEMR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000794041
NSN
5961-00-079-4041
UXAN1N21WEMR
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000794041
NSN
5961-00-079-4041
MFG
SEMI-GENERAL INC .
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: 00005-1N21WEMR
FEATURES PROVIDED: GOLD PLATED LEADS
FUNCTION FOR WHICH DESIGNED: MIXER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
MANUFACTURERS CODE: 037Z3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.222 INCHES MINIMUM AND 0.240 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.800 INCHES MINIMUM AND 0.840 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/232 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN ALL SEMICONDUCTOR DEVICE DIODE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
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C5F
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000795133
NSN
5961-00-079-5133
MFG
GENERAL ELECTRIC CO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: INTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
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125185E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000795435
NSN
5961-00-079-5435
MFG
ITT CORPORATION DBA ITT AREOSPACE CONTROLS
Description
SEMICONDUCTOR DEVICE,DIODE
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1N4248
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000795435
NSN
5961-00-079-5435
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CER72C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000795435
NSN
5961-00-079-5435
MFG
SOLITRON DEVICES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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JAN1N4248
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000795435
NSN
5961-00-079-5435
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE,DIODE
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JAN1N4248A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000795435
NSN
5961-00-079-5435
JAN1N4248A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000795435
NSN
5961-00-079-5435
MFG
ADELCO ELEKTRONIK GMBH
Description
SEMICONDUCTOR DEVICE,DIODE
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34381
TRANSISTOR
NSN, MFG P/N
5961000795737
NSN
5961-00-079-5737
MFG
INTERSIL CORPORATION
Description
TRANSISTOR
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914F298-1
TRANSISTOR
NSN, MFG P/N
5961000795737
NSN
5961-00-079-5737
MFG
SUNDSTRAND CORP
Description
TRANSISTOR
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NS12064
TRANSISTOR
NSN, MFG P/N
5961000795737
NSN
5961-00-079-5737
MFG
NATIONAL SEMICONDUCTOR CORP
Description
TRANSISTOR
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RT5966
TRANSISTOR
NSN, MFG P/N
5961000795737
NSN
5961-00-079-5737
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
TRANSISTOR
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ST89057-1
TRANSISTOR
NSN, MFG P/N
5961000795737
NSN
5961-00-079-5737
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
TRANSISTOR
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TS-1391-1
TRANSISTOR
NSN, MFG P/N
5961000795737
NSN
5961-00-079-5737
MFG
MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE
Description
TRANSISTOR